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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Access type: Metadata onlyAuthor: search.filters.author.Hsu, TL

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    Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
    (2004)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Hsu, TL
    ;
    Tseng, HC
    Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs are suffered by the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress.
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    Item type:Item,
    RF MOSFET characterization by four-port measurement
    (2005-05-01)
    Wu, SD
    ;
    Huang, GW
    ;
    Chen, KM
    ;
    Tseng, HC
    ;
    Hsu, TL
    RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and commen drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.