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Access type: Metadata onlyAuthor: search.filters.author.Hu, Chih-Wei

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Now showing 1 - 10 of 11
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    Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
    (2010-10-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chiang, Cheng-Neng
    ;
    Lin, Chao-Cheng
    In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N-2 and O-2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N-2 ambient has smaller memory window and better retention characteristics than in O-2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. (C) 2010 Elsevier B.V. All rights reserved.
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    Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
    (2011-09-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Yang-Dong
    ;
    Lin, Chao-Cheng
    In this study, ZrO2 formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO3:H2O = 1:10) for 60 s at room temperature. The quality of the formed ZrO2 was also extracted by the capacitance-voltage and current density-voltage measurements. Then, X-ray photoelectron spectroscopy has been used to confirm that the deposited Zr can be oxidized completely after the oxidation process. Moreover, a CoSi2 thin film was deposited on the nitric acid oxidized ZrO2 as the self-assembled layer of the memory device. After the device fabrication, the electrical and material characteristics of the CoSi2 nanocrystal memory devices have also been demonstrated and discussed.
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    Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
    (2010-01-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Yang-Dong
    ;
    Lin, Chao-Cheng
    In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO2 about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO3:H2O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO2 film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO2, a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO2 layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
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    High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
    (2010-01-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Huang, Yu-Hao
    ;
    Lin, Chao-Cheng
    We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2 pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO2 dielectric layer. Moreover, related reliability characteristics have been extracted.
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    Item type:Item,
    Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient
    (2010-10-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chiang, Cheng-Neng
    ;
    Lin, Chao-Cheng
    In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N(2) and O(2) ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi(2) and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N(2) ambient has smaller memory window and better retention characteristics than in O(2) ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. (C) 2010 Elsevier B.V. All rights reserved.
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    Item type:Item,
    Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
    (2011-09-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Yang-Dong
    ;
    Lin, Chao-Cheng
    In this study, ZrO(2) formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO(3):H(2)O = 1:10) for 60 s at room temperature. The quality of the formed ZrO(2) was also extracted by the capacitance-voltage and current density-voltage measurements. Then, X-ray photoelectron spectroscopy has been used to confirm that the deposited Zr can be oxidized completely after the oxidation process. Moreover, a CoSi(2) thin film was deposited on the nitric acid oxidized ZrO(2) as the self-assembled layer of the memory device. After the device fabrication, the electrical and material characteristics of the CoSi(2) nanocrystal memory devices have also been demonstrated and discussed.
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    Item type:Item,
    Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
    (2011)
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Huang, Sheng-Yao
    ;
    Chang, Guan-Chang
    ;
    Chen, Shih-Cheng
    This paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved.
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    Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
    (2008)
    Lin, Chao-Cheng
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    In this study, distributed charge trapping centers molybdenum silicide nanodots, are demonstrated. The Mo silicide nanodots were formed in the rapid thermal annealed mixed Mo-Si layer deposited by a dual electron gun system. A significant memory effect is observed through the electrical measurements, which is attributed to the formation of Mo silicide nanodots. In addition, the memory window is large enough to be identified as logic level "0" and "1" for the application on nonvolatile memory. The manufacture processes are simple and compatible with the conventional semiconductor manufacturing processes. (C) 2008 The Electrochemical Society.
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    Item type:Item,
    Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
    (2010-01-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Yang-Dong
    ;
    Lin, Chao-Cheng
    In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO(2) about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO(3):H(2)O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO(2) film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO(2), a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO(2) layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
  • Thumbnail Image
    Item type:Item,
    High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
    (2010-01-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Huang, Yu-Hao
    ;
    Lin, Chao-Cheng
    We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO(2) pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO(2) dielectric layer. Moreover, related reliability characteristics have been extracted.