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Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
(1998-02-01)
Chen, LP
;
Chan, YC
;
Chang, SJ
;
Huang, GW
;
Chang, CY
Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.
CMOS RFIC: Application to wireless transceiver design
(2000-02-01)
Wen, KA
;
Wuen, WS
;
Huang, GW
;
Chen, LP
;
Chen, KY
There is increasing interest using CMOS circuits for highly integrated high frequency wireless telecommunications systems. This paper reviews recent works in transceiver architectures, circuits and devices technology for CMOS RFIC application. A number of practical problems those must be resolved in CMOS RFIC design are also discussed.
Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure
(2000-12-01)
Huang, HJ
;
Chen, KM
;
Chang, CY
;
Huang, TY
;
Chen, LP
A strained boron-doped graded Si1-xGex structure consisting of layered Si1-xGex with increasing Ge mole fractions was studied as the solid diffusion source for forming a p(+)-n junction suitable for raised source/drain metal oxide semiconductor field effect transistor (MOSFET) application. The in situ doped graded Si1-xGex structure was selectively epitaxially grown (SEG) on the active region using ultrahigh vacuum chemical molecular epitaxy (UHVCME). Improved electrical characteristics, not possible with conventional uniform SEG Si1-xGex junction, are achieved with the graded SEG Si1-xGex junction. For the conventional uniform Si1-xGex junction, while a high Ge composition is necessary for reducing the specific contact resistance and the sheet resistance, such a high Ge composition, also results in a degraded ideality factor and a leaky junction. In contrast, a near-perfect SiGe/Si interface property is demonstrated with the graded Si1-xGex structure. Optimum specific contact resistance and the sheet resistance can be obtained by the graded Si1-xGex structure without suffering degraded junction leakage and ideality factor. These results indicate that the degree of misfit dislocation and the undesirable undercut effects could be effectively reduced by using the graded structure with its lower Ge composition close to the silicon substrate, while a low sheet resistance and specific contact resistance is preserved with its higher Ge composition at the top of the layered structure. (C) 2000 The Electrochemical Society. S1099-0062(00)08-111-6. All rights reserved.
An automatic macro program for radio frequency MOSFET characteristics analysis
(2001-10-01)
Su, CY
;
Chang, SJ
;
Chen, LP
;
Ho, YP
;
Huang, GW
The parameter extraction language (PEL) in Agilent IC-CAP software is used to develop an automatic macro program for the analysis of the characteristics of RF MOSFETs. By using this powerful macro program, the time spent on the measurement of the MOSFET characteristics and the related analysis is effectively reduced. This macro program permits a fast and accurate method to obtain the DC and RF characteristics of MOSFETs with different device geometries and operating conditions. It is also suitable for high volume measurements and analyses of MOSFET, and provides a solid jou 71 dation for RF circuit design.
A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement
(2004-05-01)
Chen, HY
;
Chen, KM
;
Huang, GW
;
Chang, CY
;
Huang, TY
In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.
Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs
(2002)
Lee, DY
;
Lin, HC
;
Chiang, WJ
;
Lu, WT
;
Huang, GW
The effects of poly-Si gate doping type and species on the negative-bias-temperature instability (NBTI) of p-channel MOS transistors were investigated. We found that, by properly suppressing boron penetration through careful thermal budget, NBTI can be reduced by proper fluorine incorporation. In addition, we found that NBTI is larger for devices with PMA annealing, thus clearly identified the role of hydrogen passivation in NBTI.
A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement
(2002)
Lue, HT
;
Tseng, TY
;
Huang, GW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Omega-cm (normal) and 10 kOmega-cm (high-resistivity, HR) silicon substrates. at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.
Layout design of high-quality SOI varactor
(2003)
Chen, HY
;
Chen, KM
;
Huang, GW
;
Huang, CH
;
Yang, TH
This paper presents the geometry effect on the characteristics of accumulation type SOI varactor with Mesa-isolation technology. Constant gate area varactors with various geometry condition were implemented to investigate the effects of layout design parameters on overall varactor performance. Physical and mathematic analysis based on the measurement results show that parasitic capacitance at the edge of active region seriously degrads the device quality factor at smallest gate length. The optimized SOI varactor has a quality factor Q of about 150 /GHz/pF at medium gate length varactor. The experiment result can serve as a design reference for high-quality SOI varactors.
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
(2003-01-01)
Meng, CC
;
Hsu, SK
;
Peng, AS
;
Wen, SY
;
Huang, GW
A 5.2 GHz; upconversion micromixer with output LC current combiner and integrated oscillator is demonstrated in 2 mum GaInP/GaAs HBT technology in this paper. Micromixer has a single-ended input and a passive LC current combiner is used to convert mixer differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz; and a cascode buffer amplifier are also integrated in the same chip. The die size is 1 mm(2). The fully integrated upconversion micromixer has conversion gain of -2.5 dB, OP1dB of -12.5 dBm and 40 dB RF-IF isolation when input IF=0.9 GHz and thus output RF=5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz: while RF output return loss is better than 12 dB for frequencies from 5.15 GHz; to 5.35 GHz.
A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology
(2003)
Meng, CC
;
Xu, SK
;
Wu, TH
;
Chao, MH
;
Huang, GW
CMOS deep N-well technology can eliminate body effects of NMOS transistors and improve LO-IF and LO-RF isolation in a Gilbert micromixer. A 37 dB LO-IF and 38 dB LO-RF isolation downconversion micromixer with 19 dB conversion gain, IP1dB=-19.5 dBm and IIP3=-12.5 dBm when RF=2.4 GHz and LO=2.25 GHz; is demonstrated in this paper by using 0.18 mum deep N-well CMOS technology. The input return loss and output return loss are better than 15 dB for frequencies up to 6 GHz. On the other hand, a downconversion micromixer without deep n-well has almost identical power performance but achieves only 20 dB LO-IF isolation and 21 dB LO-RF isolation even if two kinds of mixers are fabricated in adjacent areas of the same wafer. The downconversion micromixer used here has intrinsically single-to-differential input stage and active differential PMOS loads to increase IF differential gain while CMFB is used to stabilize bias points. An IF differential amplifier converts differential output into a single-ended output. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement.

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