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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Lai, YL

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Now showing 1 - 4 of 4
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    2-V-operation delta-doped power HEMT's for personal handy-phone systems
    (1997-08-01)
    Lai, YL
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Liu, TH
    ;
    Wang, SP
    A high-efficiency and high-power-density delta-doped AIGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by the power transistors for the PHS. The state-of-the-art results for the PHS operating at 2.0 V were achieved by the delta-doped power HEMT for the first time.
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    5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications
    (1996-05-01)
    Lai, YL
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Chen, TK
    ;
    Liu, TH
    A high-power-density dual-delta-doped AlGaAs/InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W, The 1 mu m gate-length HEMT exhibited a current density of 425 mA/mm at V-gs = 0.5 V, The maximum transconductance of the device was 270 mS/mm, The effective knee voltage was as low as 0.3 V, At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz, This is the highest power density of a dual-delta-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.
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    High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications
    (1996)
    Lai, YL
    ;
    Chan, EY
    ;
    Chang, CY
    ;
    Liu, TH
    ;
    Wang, SP
    A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the de and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at V-gs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2mm-wide HEMT demonstrated an output power of 26.1 dBm ( a power density of 204 mW/mm) and a power-added efficiency of 65 % under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60 % were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.
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    Highly selective etch process for the manufacture of GaAs power MESFET's
    (1999)
    Chang, EY
    ;
    Lai, YL
    ;
    Lee, YS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    In this paper, a highly selective etch process for the manufacture of GaAs power metal-semiconductor field-effect transistor (MESFET's) has been developed. The selective etch process using citric acid/potassium citrate/hydrogen peroxide solutions were studied. The experimental results were utilized to the gate recess process of the GaAs MESFET's for advanced wireless communication applications. When operating at a drain bias of 10 V and a frequency of 1.88 GHz, the 14.7-mm-wide MESFET's provided a maximum output power (Pout) of 38.8 dBm with a power-added efficiency (PAE) of 49.5% and a gain of 8.42 dB. The linear gain was 12.2 dB and the Pout at l-dB compression was 37.7 dBm with a PAE of 50.7%. The maximum PAE was 52.5%.