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Access type: Metadata onlyAuthor: search.filters.author.Lee, MC

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Now showing 1 - 10 of 14
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    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
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    Pan, YC
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    Lin, HC
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    Ou, J
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    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
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    Photoluminescence studies of GaN films of different buffer layer and doping concentration
    (1998-02-01)
    Shen, CC
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    Shu, CK
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    Lin, HC
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    Ou, J
    ;
    Chen, WK
    Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.
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    Phonon-plasmon interaction in GaN films studied by Raman scattering
    (1998-02-01)
    Shen, CC
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    Shu, CK
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    Lin, HC
    ;
    Chen, WK
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    Chen, WH
    GaN films of different buffer thicknesses (from 0 to 600 Angstrom) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8 x 10(16) to 5 x 10(17) cm(-3) as determined by Hall measurements. The Raman scattering reveals that the A(1)(LO) mode shifts from 733 to 740 cm(-1) as a result of the phonon-plasmon interaction.
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    Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
    (1998-08-03)
    Shu, CK
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    Ou, J
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    Lin, HC
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    Chen, WK
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    Lee, MC
    The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. (C) 1998 American Institute of Physics.
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    Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
    (1998-11-02)
    Lee, MC
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    Lin, HC
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    Pan, YC
    ;
    Shu, CK
    ;
    Ou, J
    Thin InN films were deposited on the (0001) sapphire substrate at various temperatures from 325 to 600 degrees C by metalorganic vapor phase epitaxy. We used Raman scattering and x-ray diffraction to investigate the film properties and crystalline structures. Significant line broadening, softening and intensity evolution were observed at the growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of the mixed hexagonal and cubic structures and the related dislocation defects. As the growth temperature is further increased, the hexagonal phase is found to be dominant in the deposited InN film. (C) 1998 American Institute of Physics. [S0003-6951(98)00744-X].
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    Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
    (1999-08-03)
    Shu, CK
    ;
    Ou, J
    ;
    Lin, HC
    ;
    Chen, WK
    ;
    Lee, MC
    The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. (C) 1998 American Institute of Physics. [S0003-6951(98)01331-X].
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    Highly reliable nickel silicide formation with a Zr capping layer
    (2003-05-01)
    Lee, TL
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    Lee, JW
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    Lee, MC
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    Lei, TF
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    Lee, CL
    Zr is proposed to be the capping layer for nickel silicide to obtain a stable low resistance contact system even at an annealing temperature as high as 850degreesC. A NiSi monolayer is the only phase observed in those samples annealed from 500 to 850degreesC. Experimental results from transmission electron microscopy and X-ray diffractometry analysis show that the agglomeration and precipitate of nickel silicide problems which are usually encountered in the NiSi system are eliminated. (C) 2003 The Electrochemical Society.
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    The effects of isoelectronic in-doping in GaN films grown by MOCVD
    (1998)
    Shu, CK
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    Ou, J
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    Lin, HC
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    Pan, YC
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    Lee, WH
    The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition (MOCVD) was investigated by using Raman scattering, scanning electron microscopy (SEM), Hall, Xray and photoluminescence (PL) measurements. In our study, after incorporating small amounts of In atoms into GaN compound (less than 0.4%, thus no alloy), SEM pictures showed improved surface smoothness with greatly reduced nano-pits, which was also confirmed by the multiple interference effects in PL spectra. Doping of adequate quantity caused the reduction of yellow luminescence and unintentional background concentration, and the line width shrinkage in X-ray, PL and Raman data, and the enhanced mobility. The improved crystalline and optical qualities of GaN:In films may be attributed to the decrease in dislocation density that may be related to the "impurity softening" phenomena.
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    The electronic structure and optical properties of phosphorus implanted GaN films
    (2000)
    Shu, CK
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    Lee, WH
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    Huang, HY
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    Chuang, CH
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    Chen, WK
    We have studied optical and electronicc transition properties of GaN layers grown by MOCVD which are implanted by isoelectronic impurities of phosphorus (P). The P-implanted samples were treated by rapid thermal annealing to recover implantation-induced damages. A strong emission band around 430 nm were observed in P-implanted sample due to the recombination of bound exciton to P-hole isoelectronic traps. From the Arrhenius plot, the hole binding energy about 180 meV localized at the P-isoelectronic trap and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, we suggest that the implantation likely induces N-I or P-related defects. From the PLE, we found that the absorption by band-to-band and shallow donors dominates the yellow luminescence (YL) and the implantation of P has induced localized states that not only increase the YL but also suppress the transition from the free electron-hole pairs to the deep-levels.
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    Long-term photocapacitance decay behavior in undoped GaN
    (2000)
    Chung, HM
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    Pan, YC
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    Chung, WC
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    Chen, NC
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    Tsai, CC
    We have employed the photocapacitance measurement to examine the physical properties of GaN Schottky diode made from the undoped epilayer grown by metalorganic vapor phase epitaxy. The resulted transient capacitance spectrum shows that the diode exhibits a characteristic of long-term logarithmic-type decaying behavior, which, we believe, is correlated closely to the linear arranged traps close to the core of the threading edge dislocations.