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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Lou, JC

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    Item type:Item,
    Characteristics of the inter-poly Al2O3 dielectrics on NH3-nitrided bottom poly-si for next-generation flash memories
    (2005-04-01)
    Chen, YY
    ;
    Chien, CH
    ;
    Lou, JC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The effects of surface NH3 nitridation of the bottom poly-Si film, and post-deposition annealing (PDA) temperature, on the electrical properties and reliability characteristics of aluminum oxide (Al2O3) inter-poly capacitors, were evaluated in this study. The polarity-dependent dielectric properties of Al2O3 inter-poly dielectrics (IPDs) were strongly affected by both surface nitridation and the annealing temperature. For positive gate bias, IPDs with NH3 surface nitridation significantly suppressed the formation of an additional layer with a lower dielectric constant, during the post-annealing process, and obtained a smoother interface, compared to those without nitridation treatment. Furthermore, the presence of a thin Si-N layer made the PDA more effective in eliminating the traps existing in the as-deposited films, and improved dielectric characteristics, under negative polarity. As a result, the smoother interface and smaller electron trapping rate contributed to the drastically reduced leakage current, enhanced breakdown field, and charge to breakdown (Q(bd)) of the Al2O3 inter-poly capacitors with surface NH3 nitridation. Moreover, the electrical properties of Al2O3 IPD were heavily dependent upon the PDA temperature. The sample exhibited optimal quality in terms of leakage current, electron trapping rate and Qbd when annealed at 900 degrees C. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses have shown that this occurrence arises from various compositions, under different annealing conditions and excess oxygen, which can act as an electron trapping center, playing an important role in determining IPD electrical properties.
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    Item type:Item,
    Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
    (1995)
    Sun, SC
    ;
    Chen, CH
    ;
    Lou, JC
    ;
    Yen, LW
    ;
    Lin, CJ
  • Thumbnail Image
    Item type:Item,
    MOS characteristics of N2O-grown and NO-annealed oxynitrides
    (1995)
    Sun, SC
    ;
    Chen, CH
    ;
    Lou, JC
    ;
    奈米中心
    ;
    Nano Facility Center
  • Thumbnail Image
    Item type:Item,
    Characteristics of the inter-poly Al(2)O(3) dielectrics on NH(3)-nitrided bottom poly-si for next-generation flash memories
    (2005-04-01)
    Chen, YY
    ;
    Chien, CH
    ;
    Lou, JC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The effects of surface NH(3) nitridation of the bottom poly-Si film, and post-deposition annealing (PDA) temperature, on the electrical properties and reliability characteristics of aluminum oxide (Al(2)O(3)) inter-poly capacitors, were evaluated in this study. The polarity-dependent dielectric properties of Al(2)O(3) inter-poly dielectrics (IPDs) were strongly affected by both surface nitridation and the annealing temperature. For positive gate bias, IPDs with NH(3) surface nitridation significantly suppressed the formation of an additional layer with a lower dielectric constant, during the post-annealing process, and obtained a smoother interface, compared to those without nitridation treatment. Furthermore, the presence of a thin Si-N layer made the PDA more effective in eliminating the traps existing in the as-deposited films, and improved dielectric characteristics, under negative polarity. As a result, the smoother interface and smaller electron trapping rate contributed to the drastically reduced leakage current, enhanced breakdown field, and charge to breakdown (Q(bd)) of the Al(2)O(3) inter-poly capacitors with surface NH(3) nitridation. Moreover, the electrical properties of Al(2)O(3) IPD were heavily dependent upon the PDA temperature. The sample exhibited optimal quality in terms of leakage current, electron trapping rate and Qbd when annealed at 900 degrees C. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses have shown that this occurrence arises from various compositions, under different annealing conditions and excess oxygen, which can act as an electron trapping center, playing an important role in determining IPD electrical properties.