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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1973 - 197911990 - 19956

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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.SZE, SM

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Now showing 1 - 7 of 7
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    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
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    DESIGN CONSIDERATIONS OF LOW-NOISE HIGH-EFFICIENCY SILICON IMPATT DIODES
    (1973-01-01)
    SU, S
    ;
    SZE, SM
    ;
    工學院
    ;
    College of Engineering
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    Item type:Item,
    HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS
    (1994-08-01)
    CHYAN, YF
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    CHIUEH, HM
    ;
    REIF, R
    This paper reports high-level injection influence on the high frequency performance in the polycrystalline silicon emitter bipolar transistors. Under high-level injection, the transconductance is not proportional to collector current. From the analysis, both the base resistance and the cutoff frequency are functions of terminal voltage, i.e. applied bias, and the maximum oscillation frequency is also a function of terminal voltage. By comparing these results obtained from the self-consistent high-level injection model considering injected charge storage (i.e. injected electron and hole concentrations comparable to doping concentrations in the base and emitter region) and base resistance with those results obtained from models which neglect the injected charge storage effect and/or the base resistance, it is found that both the injected charge storage effect and the base resistance must be considered to get accurate aforementioned device parameters.
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    ANALYTICAL MODELING OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
    (1994-08-01)
    CHYAN, YF
    ;
    CHANG, CY
    ;
    SZE, SM
    ;
    LIN, MJ
    ;
    LIAO, K
    We derived an analytical model, focused on injected charge storage, for electron current density J(n), hole current density J(ps), current gain beta, and forward transit time tau(f), for heavily doped base and emitter with non-uniform band structures. This model can apply in high-level injection regions before the onset of the Kirk effect. By comparing with those results obtained from Sukuki's low-level injection model, it is observed that a new high-level injection term, proportional to the square of the hole current density, appears in the injected hole concentration in the polycrystalline silicon emitter and this term vanishes in the limit of low-level injection. As bias increases, J(n) and J(ps) of high-level injection model are less than those of the low-level injection model. In addition. for low-level injection model, beta, tau(f), the base transit time tau(b), the crystalline silicon emitter transit time tau(se), and the polycrystalline silicon emitter transit time tau(pe) keep constant for all injection region. However, for high-level injection model, beta and tau(b) decreases as bias increases, while tau(se) and tau(pe) increase with increasing bias. Tau(f) reaches a minimum and then increases. We conclude that the high-level injection model offers significant information for device operations at various electron current levels.
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    INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES
    (1994-12-01)
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    ;
    交大名義發表
    ;
    電子工程學系及電子研究所
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    Item type:Item,
    SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES
    (1994-12-01)
    CHAN, SH
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    LEE, WI
    ;
    電子物理學系
    The present experiments demonstrate the epitaxial growth (EG) and selective epitaxial growth (SEG) of GaInP by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), trimethylindium (TMI), trimethylgallium (TMG) and triethylgallium (TEG) as group III sources. In epitaxial growth of GaInP, the Ga incorporation efficiency using TEG+EDMI is found to be lower than those using other combinations. Completely selective epitaxy using TEGa + EDMIn can be achieved at a growth temperature of 675-degrees-C and at a growth pressure of 40 Torr, while other combinations (TEG + TMI, TMG + TMI, and TMG + EDMI) can achieve SEG of GaInP at 650-degrees-C. High resolution double-crystal X-ray measurements are used to investigate the compositional variation in the selectively epitaxial-grown area.
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    Item type:Item,
    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.