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Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors
(2020-09-01)
Lin, Chih-Chih
;
Tai, Mao-Chou
;
Chang, Ting-Chang
;
Tsao, Yu-Ching
;
Wang, Yu-Xuan
In this work, an abnormal lowering of subthreshold swing (SS) after self-heating stress in a device with thick channel is observed. A model of interface defect shielding is proposed, based on electron trapping at the channel/gate insulator interface. The phenomenon is discussed systematically through the band diagram and extractions of the field effective mobility. Results suggest that a depletion region appears after electron trapping at the front channel, which then prevents the carriers from reaching the interface defects. Therefore, an abnormal superior electrical performance after stress is observed. Finally, a dual gate amorphous InGaZnO (a-IGZO) thin film transistor (TFT) is used to clarify the phenomenon. Results from different top gate bias voltage confirms the bulk accumulation and better gate control.
Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors
(2020-09-30)
Tu, Hong-Yi
;
Chang, Ting-Chang
;
Tsao, Yu-Ching
;
Tai, Mao-Chou
;
Tsai, Yu-Lin
Degradation in low-temperature polycrystalline-silicon thin-film transistors after electrical stress was thoroughly investigated in this work. Main channel degradation, abnormal hump generation and hysteresis appearing in the hump region can be observed after positive bias stress. Furthermore, the difference in subthreshold swing (SS) values between forward/reverse sweep is observed. The electron trapping into the gate insulator (GI) dominates the main degradation and the hump generation. Additionally, the difference in SS values which appears in the hump region is attributed to the interface traps and the hysteresis is caused by electron trapping/detrapping into GI.
Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
(2020-05-01)
Zheng, Yu-Zhe
;
Huang, Shin-Ping
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000'WC) compression at R = 2mm. Due to the low Young's modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
(2020-03-01)
Wu, Pei-Yu
;
Zheng, Hao-Xuan
;
Shih, Chih-Cheng
;
Chang, Ting-Chang
;
Chen, Wei-Jang
In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO based-RRAM. The results of material analysis indicate that using CO2 as ammonia hydroxide carrier during the annealing process leads to the reduction in dangling bond density. This can be clearly observed in the decrease in breakdown voltage during the forming process and a lower operating current during operation. Furthermore, in this ammonium-doped ZnO based-RRAM, we study the molecular doping of NH3 in ZnO, where the endurance and retention properties are improved as well. These improvements can be attributed to the higher concentration of nitrogen in the switching layer, which can effectively control the active oxygen ions during the operation process.
Analysis of Negative Bias Temperature Instability Degradation in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors of Different Grain Sizes
(2019-11-01)
Tu, Hong-Yi
;
Tsao, Yu-Ching
;
Tai, Mao-Chou
;
Chang, Ting-Chang
;
Tsai, Yu-Lin
This letter investigates degradation after negative bias temperature instability (NBTI) stress applied to LTPS TFTs with different polycrystalline-silicon grain sizes. The initial characteristics of the LTPS TFTs are similar regardless of grain size; however, we observed a different degree of degradation after NBTI depending on grain size. In general, after NBTI, both grain boundary traps and interface traps were generated. We found that the degree of NBTI degradation is dominated by the concentration of grain boundary traps, which themselves are a result of the different grain sizes that occur due to excimer laser annealing energy. At initial, dangling bonds in the grain boundaries and at the interface are passivated by hydrogen atoms, hence the initial characteristics are similar. Since the large grain of poly-Si initially generates more dangling bonds in the grain boundaries, after NBTI, hydrogen depassivation generates more grain boundary traps and causes much more serious degradation in device performance.
Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access Memory
(1970-01-01)
Zheng, Hao-Xuan
;
Shih, Chih-Cheng
;
Chang, Ting-Chang
;
Shih, Lin-Yi
;
Shih, Yao-Kai
This study proposes the design of conductive bridge random access memory (CBRAM) using an indium electrode, which diffuses into hafnium oxide. The device is found to exhibit good operating characteristics, maintaining a large operation window, low set and reset voltages, and advantageous operation speed, thereby reducing operating power consumption. Electrical experiments, transmission electron microscopy, and energy-dispersive spectroscopy confirm that the device exhibits the characteristics of a CBRAM device. In addition, due to the large operation window of this In electrode device, a combination of two of these CBRAM can act as a complementary resistive switching (CRS) device with a large memory window.
A Dual-Gate InGaZnO4-Based Thin-Film Transistor for High-Sensitivity UV Detection
(2019-08-01)
Chen, Po-Hsun
;
Tsao, Yu-Ching
;
Chien, Yu-Chieh
;
Chiang, Hsiao-Cheng
;
Chen, Hua-Mao
UV-sensing devices have received significant recent attention for applications in areas such as human health, fire detection, and optical communication. One key factor for product commercialization is determining the optimal materials that allow for integration of excellent UV-sensing properties with compatibility with industrial fabrication processes. However, current UV sensors often fail to achieve this due to either mismatched materials or a device that must be excessively large in order to produce enough photocurrent for UV detection. The UV-light-sensing properties of an amorphous InGaZnO4 (IGZO) thin-film transistor with a dual-gate structure and relatively small device size (width/length = 50 mu m/10 mu m) that achieves high sensitivity through a threshold-voltage-(V-th)-adjustment method is proposed. Comparing the drain currents under UV exposure to those under darkened conditions indicates that the ratio between the photoinduced and dark current reaches 10(6). Furthermore, the UV sensitivity of the dual-gate transistors can be adjusted by varying the bottom gate voltage, with each pixel of the sensor then being read out separately via scan line pulses. This allows the dual-gate a-IGZO transistor to be used for high-performance UV sensing while being effectively integrated in display applications.
Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
(2019-06-01)
Lin, Chun-Chu
;
Chen, Po-Hsun
;
Chen, Min-Chen
;
Chang, Ting-Chang
;
Lin, Chih-Yang
This paper investigates material modifications induced by cosputtering indium-tin oxide (ITO) with gadolinium (Gd) at two different power levels. In addition, resistance switching (RS) properties were also verified for use as an insulator in resistive random access memory (RRAM). Comparison of scanning electron microscope (SEM) measurements for the two different cosputtering powers indicated significant changes of the ITO surface. Transparency was also verified by an N&K analyzer measurement, with results indicating a constant in transparency induced by the lower power Gd doping, indicating potential for transparent applications. Furthermore, the mole fraction ratio defined by X-ray photoelectron spectroscopy reveals a Gd2O3 peak, a likely reason for the ITO thin film becoming less conductive. This ITO/Gd:ITO/TiN RRAM can exhibit stable and robust RS characteristics at a lower forming voltage. In addition, lower operating voltages, including both SET and RESET voltages, can be obtained. Reliability tests including endurance and retention were carried out to confirm its RS stability. The RS mechanism of this ITO/Gd:ITO/TiN device was also investigated with the current-voltage (I-V) fitting method. Moreover, temperature effects were also applied to verify the high-resistance state (HRS) mechanism. Finally, a conduction model was proposed to clarify the RS characteristics and confirm that the ITO/Gd:ITO/TiN device is appropriate for data storage.
The influence of temperature on set voltage for different high resistance state in 1T1R devices
(2019-02-01)
Tan, Yung-Fang
;
Su, Yu-Ting
;
Chen, Min-Chen
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
HfO2-based 1T1R is researched in this paper. The on-off ratio is an important electrical characteristic of RRAM, with a larger on-off ratio being preferable. However, temperature also affects the set process when operating RRAM. This study finds that the set process has different sensitivities to temperature at different high resistance states (HRSs). The set voltage of the higher HRS decreases with increasing temperature, while in the lower HRS, set voltage is independent of temperature. From the result, the lower HRS is better for RRAM because it is stable at different temperatures. (C) 2019 The Japan Society of Applied Physics
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
(2011-04-01)
Syu, Yong-En
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Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Hung, Ya-Chi
;
Chang, Kuan-Chang
This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.

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