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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1994 - 19958

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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.WU, JW

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Now showing 1 - 8 of 8
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    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
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    Item type:Item,
    REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2
    (1994)
    WU, JW
    ;
    CHANG, CY
    ;
    LIN, KC
    ;
    CHANG, EY
    ;
    HWANG, JH
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    Item type:Item,
    THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERS
    (1994)
    CHANG, EY
    ;
    CHEN, JS
    ;
    WU, JW
    ;
    LIN, KC
    ;
    材料科學與工程學系
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    Item type:Item,
    THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
    (1994)
    WU, JW
    ;
    CHAN, SH
    ;
    LIN, KC
    ;
    CHANG, CY
    ;
    CHANG, EY
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    Item type:Item,
    ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
    (1994-05-15)
    CHEN, HD
    ;
    FENG, MS
    ;
    LIN, KC
    ;
    CHEN, PA
    ;
    WU, CC
    An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1 x 10(18) and 4 x 10(18) cm-3. However, the 77 K mobility was enhanced from p > 4 X 10(18) cm-3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7 X 10(18) to 3 X 10(19) cm -3. As a result, the 77 K mobility was around 50%-60% greater than the 300 K mobility due to the metallic-type conductivity.
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    PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
    (1994-12-01)
    CHANG, EY
    ;
    LIN, KC
    ;
    WU, JW
    ;
    CHEN, TH
    ;
    CHEN, JS
    Monolithic microwave integrated circuit (MMIC) chips are typically passivated with dielectric films to improve their long-term environmental reliability. Improper passivation generally degrades chip performance and reduces wafer yield. This paper reports the change of metal-semiconductor field-effect transistor (MESFET) parameters after silicon nitride passivation using electron cyclotron resonance chemical vapor deposition (ECR-CVD). In general, the changes in the electrical parameters after passivation are small. Gate-drain breakdown voltage of the MESFET's after ECR-CVD passivation is significantly improved compared to that after PECVD. The microwave characteristics of the high-powered MESFET's passivated using ECR-CVD silicon nitride are also reported in this paper.
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    Item type:Item,
    THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER
    (1995-02-01)
    WU, JW
    ;
    CHANG, CY
    ;
    LIN, KC
    ;
    CHANG, EY
    ;
    CHEN, JS
    The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450 degrees C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au.-A new phase of Au4In appears after annealing at 300 degrees C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of(Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450 degrees C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of(Ti/Pt/Au)-InGaAs ohmic contact is better than that of(Ni/Ge/Au)-InGaAs ohmic contact.
  • Thumbnail Image
    Item type:Item,
    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.