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Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
(2005-10-01)
Hsueh, TH
;
Sheu, JK
;
Huang, HW
;
Chang, YH
;
Ou-Yang, MC
ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
(2004-11-01)
Chang, YA
;
Kuo, HC
;
Chang, YH
;
Wang, SC
;
光電工程學系
In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
A simple passive-alignment packaging technique for laser diode modules
(1998-10-01)
Wang, SC
;
Chi, S
;
Cheng, WH
;
光電工程研究所
;
Institute of EO Enginerring
A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
Efficient fibre-coupled laser diode end-pumped NYAB laser
(1996-08-01)
Chen, YF
;
Wang, SC
;
Kao, CF
;
Huang, TM
;
光電工程研究所
Under optimum pump conditions, 60mW of green laser output corresponding to a conversion efficiency 6% was obtained from a self-frequency-doubling NYAB crystal when pumped by a 1W fibre-coupled laser diode. The prospect of higher conversion efficiency is also discussed.
Investigation of fiber-coupled laser-diode-pumped NYAB green laser performance
(1996-10-01)
Chen, YF
;
Wang, SC
;
Kao, CF
;
Huang, TM
;
光電工程研究所
The optimum pump condition for a fiber-coupled diode end-pumped NYAB laser has been determined by including the effect of pump beam quality into the analysis. Under the optimum pump condition, 67 mW of the green laser output corresponding to a conversion efficiency 10.3% was obtained from a self frequency-doubling NYAB crystal when pumped by a 650 mW fiber-coupled laser diode. The prospect of higher conversion efficiency is also discussed.
Modeling of diode-end-pumped Q-switched solid-state lasers: influence of energy-transfer upconversion
(2002-07-01)
Chen, YF
;
Lan, YP
;
Wang, SC
;
電子物理學系
;
光電工程學系
The influence of energy-transfer upconversion (ETU) on diode-end-pumped actively Q-switched lasers is investigated by the space-dependent rate equation analysis. The numerical analysis reveals that as a consequence of the ETU effect there is an optimum pump size for yielding the largest pulse energy and a different optimum pump for yielding the highest peak power at a given pump power. The practical example of the diode-pumped actively Q-switched Nd:YAG laser has been used to verify the present model. (C) 2002 Optical Society of America.
Efficient generation of continuous-wave yellow light by single-pass sum-frequency mixing of a diode-pumped Nd : YVO4 dual-wavelength laser with periodically poled lithium niobate
(2002-10-15)
Chen, YF
;
Tsai, SW
;
Wang, SC
;
Huang, YC
;
Lin, TC
We report efficient generation of cw yellow light by use of single-pass sum-frequency mixing from a diode-pumped Nd:YVO4 dual-wavelength laser with periodically poled lithium niobate. A diode-pumped Nd:YVO4 dual-wavelength laser is implemented with a three-mirror cavity, and the optimum oscillation condition is obtained from theoretical analysis. We extracted 78 mW of power at 593 run from 1.2 W at 1064 nm and from 1.0 W at 1342 nm in a beam with excellent quality. The output power could probably be increased to similar to92 mW by antireflection. coating of the crystal. (C) 2002 Optical Society of America.
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers
(2004-11-01)
Chang, YA
;
Kuo, HC
;
Chang, YH
;
Wang, SC
;
光電工程學系
In this article, the laser performance of the 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1 - x)N(x) quantum-well (QW) lasers with various GaAs(1 - x)N(x) strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs(1 - x)N(x) barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In(0.4)Ga(0.6)As(0.986)N(0.014) QW and GaAs(1 - x)N(x) barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs(1 - x)N(x) quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
Evaluation of hot workability of H13 through processing map
(1999)
Wang, SC
;
Chou, CP
;
Lin, CH
;
Chang, CC
;
機械工程學系
Observation of second harmonic emission and three-photon fluorescence from Gallium-Nitride
(2000)
Lee, CK
;
Kao, FJ
;
Wang, SC
;
Pan, CL
;
光電工程學系
In this study, optical emission from the undoped GaN epilayer sample was characterized using confocal micro-spectroscopy. A femtosecond laser was used to excite the sample. As the laser wavelength tuned from 762-796nm, the sample emitted a corresponding second harmonic signal from 381-398nm with a quadratic power dependence. A strong signal at 367nm resulted from a three-photon process with cubic power dependence was simultaneously observed for the first time.

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