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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Wu, Yu-Sheng

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Now showing 1 - 7 of 7
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    Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa
    (2014-06-01)
    Lai, Ying-Yu
    ;
    Chou, Yu-Hsun
    ;
    Wu, Yu-Sheng
    ;
    Lan, Yu-Pin
    ;
    Lu, Tien-Chang
    In this work, we have developed a simple GaN-based microcavity (MC) with an intracavity shallow etched mesa. The textured GaN-based MC incorporated two high-reflectivity dielectric Bragg mirrors and an InGaN/GaN multiple quantum well with a shallow etched mesa as an optical confined structure. Lasing and transverse optical confinement characteristics have been verified by measuring devices with different mesa diameters. A quality factor (Q) of 2600 and a threshold energy of 30 nJ have been observed in a 10-mu m-diameter device. Such a cavity structure could be implanted into electrically pumped GaN vertical-cavity surface-emitting lasers for supporting efficient transverse confinement. (C) 2014 The Japan Society of Applied Physics
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    Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variations
    (2009)
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (V(th)) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the V(th) variation,
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    Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region
    (2009)
    Fan, Ming-Long
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    Wu, Yu-Sheng
    ;
    Hu, Vita Pi-Ho
    ;
    Su, Pin
    ;
    Chuang, Ching-Te
    This paper investigates the Static Noise Margin (SNM) of FinFET SRAM cells operating in sub-threshold region using analytical solution of 3D Poisson's equation. An analytical SNM model for sub-threshold FinFET SRAM is demonstrated and validated by TCAD mixed-mode simulations. The stabilities of several novel independently controlled-gate FinFET SRAM cells are examined. Significant nominal RSNM improvements are observed in these novel cells. However, Write-ability is degraded and becomes an important concern for certain configurations in sub-threshold region. Our result indicates that R/W word-line (WL) voltage control technique is more effective than transistor sizing for improving the Write-ability of the FinFET sub-threshold SRAM. While 6T cell is not a viable candidate for sub-threshold SRAM and 8T/10T cells must be used in bulk CMOS, our analysis establishes the feasibility and viability of 6T FinFET cells for sub-threshold SRAM applications.
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    Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation
    (2009)
    Hu, Vita Pi-Ho
    ;
    Wu, Yu-Sheng
    ;
    Fan, Ming-Long
    ;
    Su, Pin
    ;
    Chuang, Ching-Te
    This paper investigates the Static Noise Margin (SNM) of Ultra-Thin-Body (UTB) SOI SRAM cells operating in subthreshold region using analytical solution of Poisson's equation validated with TCAD simulations. An analytical SNM model for UTB SOI SRAM cells operating in subthreshold region is presented. Our results indicate that back-gate bias (V(bg)) can mitigate the Read SNM (RSNM) variability of UTB SO[ SRAM cells in the subthreshold region, and the improvement of SNM variability is more significant than superthreshold region. Increasing cell beta-ratio shows limited improvement on RSNM and has no benefit on SNM variability for subthreshold operation. The UTB SOI 8T SRAM cell exhibits RSNM 2X larger than the 6T SRAM cell in subthreshold region.
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    Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM
    (2009)
    Hu, Vita Pi-Ho
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    Wu, Yu-Sheng
    ;
    Fan, Ming-Long
    ;
    Su, Pin
    ;
    Chuang, Ching-Te
    This paper analyzes the stability, margin, and performance of Ultra-Thin-Body (UTB) SOI 6T/8T SRAM cells operating in subthreshold region. An analytical SNM model for UTB SOI 6T/8T SRAM cells operating in the subthreshold region is presented to investigate the Read SNM (RSNM) and Write SNM (WSNM). Our results indicate that back-gating technique is more effective in the subthreshold region than in the superthreshold region for improving RSNM and WSNM. The UTB SOI 6T SRAM cell with back-gating technique to increase the strength of the pull-up transistors and decrease the strength of the pass-gate transistors shows comparable RSNM in the subthreshold region with the 10T bulk subthreshold SRAM cell and an improvement in RSNM variation. Due to better electrostatic integrity, back-gating technique (pull-up PFET with positive back-gate bias, pull-down/pass-gate NFET's with negative back-gate bias) mitigates the 6T UTB SOI SRAM RSNM variation significantly with some improvement in RSNM. Increasing cell beta-ratio shows limited improvement on RSNM and has no benefit on SNM variability for subthreshold operation. The UTB SOI 8T SRAM cell exhibits RSNM 2X larger than the 6T SRAM cell in the subthreshold region. Mixed-mode device/circuit simulations show that 6T/8T UTB SOI SRAMs operating in the subthreshold region can meet/support the stability, leakage/density, and frequency requirements for intended application space of subthreshold SRAMs.
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    Investigation of scaling for multi-gate MOSFETs using analytical solution of 3-D Poisson's equation
    (2007)
    Wu, Yu-Sheng
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    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
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    Investigation of Electrostatic Integrity for Ultra-Thin-Body GeOI MOSFET Using Analytical Solution of Poisson's Equation
    (2008)
    Hu, Vita Pi-Ho
    ;
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (T(BOX)) and back-gate bias (V(back-gate)) on the electrostatic integrity of GeOI devices are also examined.