<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Access type: Metadata onlySubject: search.filters.subject.CHEMICAL VAPOR DEPOSITION

Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Item type:Item,
    CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
    (1993-07-22)
    TAI, K
    ;
    HUANG, KF
    ;
    WU, CC
    ;
    WYNN, JD
    ;
    電子物理學系
    Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
  • Thumbnail Image
    Item type:Item,
    LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM HEXAMETHYLDISILANE
    (1994-11-15)
    CHIU, HT
    ;
    HSU, JS
    ;
    交大名義發表
    ;
    應用化學系
    ;
    National Chiao Tung University
    Silicon carbide thin films were grown by low pressure chemical vapor deposition using hexamethyldisilane Me3SiSiMe3 as the single-source precursor. Deposition of uniform thin films on Si(1 1 1) substrates was carried out at temperatures 1123-1323 K in a hot-wall reactor. The growth rates were 0.9-55 nm min-1 depending on the conditions employed. Estimated energy of activation is 110 kJ mol-1. Bulk elemental composition of the thin films, studied by an electron probe X-ray microanalyzer, is best described as SiC(x) (x = 0.8-2.3). The Si/C ratio increased with increasing temperature of deposition. The films were cubic polycrystals, a = 0.435-0.438 nm, as indicated by scanning transmission electron microscopy, electron diffraction and X-ray diffraction. The lattice parameter decreased with increasing temperature of deposition. Elemental distribution within the films, studied by Auger depth profiling and X-ray photoelectron spectroscopy, was uniform. Gas phase products H-2, CH4, C2H4, Me3SiH and Me4Si were identified and possible reaction pathways were proposed.
  • Thumbnail Image
    Item type:Item,
    SYNTHESES AND X-RAY CRYSTAL-STRUCTURES OF DICHLOROBIS(TERT-BUTYLIMIDO) COMPLEXES OF MOLYBDENUM(VI) - POTENTIAL PRECURSORS TO MOLYBDENUM NITRIDE AND MOLYBDENUM CARBONITRIDE
    (1994-12-01)
    CHIU, HT
    ;
    CHANG, GB
    ;
    HO, WY
    ;
    CHUANG, SH
    ;
    LEE, GH
    The bistertbutylimido complexes [MoCl(mu L-Cl)(NBu(t))(2)(NH(2)Bu(t))](2), 1, and MoCl2(NBu(t))(2)(py)(2), 2 (py = pyridine), were prepared by reacting MoCl2(NBu(t))(2)(dme) (dme = dimethoxyethane) with excess Bu(t)NH(2) and pyridine, respectively. Their structures were determined by X-ray crystallography. 1 has a pseudo edge-shared bioctahedral geometry with two Cl ligands bridging the Mo centers unequally. Pertinent bond distances and angles for 1, Mo = NBu(bent)(t) = 1.737(3) Angstrom, angle Mo = N-CMe(3) = 154.0(2)degrees; Mo = NBu(linear)(t) = 1.725(3) Angstrom, angle Mo = N-CMe(3) = 172.4(2)degrees; Mo-Bu(t)NH(2) = 2.233(2) Angstrom; Mo=Cl-bridging = 2.575(1) and 2.835(1) Angstrom, and Mo-Cl-leminal = 2.428(1) Angstrom. Crystal data for 1: triclinic, space group P (1) over bar, a = 8.897(4) Angstrom, b = 10.518(3) Angstrom, c = 10.663(3) Angstrom, alpha = 107.68(2)degrees, beta = 98.03(3)Angstrom, gamma = 99.26(3)degrees, V = 919.3(5) Angstrom(3), Z = II D-c = 1.381 g/mL. 2 is mononuclear with a distorted octahedral geometry with two trans Cl ligands, two cis-oriented Bu(t)N = ligands, and two py ligands trans to the imido groups. Pertinent averaged bond distances and angles for 2, Mo = NBu(bent)(t) = 1.736(4) Angstrom, angle Mo = N-CMe, = 161.8(4)degrees; Mo = NBu(linear)(t) = 1.705(5) Angstrom, angle Mo = N-CMe(3) = 173.4(4)degrees; Mo-N(py)= 2.44(1), Mo-Cl = 2.421(3) Angstrom Crystal data for 2: orthorhombic, space group Pna2(1) a = 16.860(2) Angstrom, b = 8.920(3) Angstrom, c = 15.120(3) Angstrom, V = 2274.1(9) Angstrom(3), Z = 4, D-c = 1.362 g/mL. A potential application of 2 as a single-source precursor to grow molybdenum nitride and molybdenum carbonitride thin films by low pressure chemical vapor deposition (LPCVD) was explored. Cubic phase thin films (a(thin film) = 4.16 - 4.20 Angstrom) were grown at temperatures between 450 degrees C and 650 degrees C with hydrogen as carrier gas. At 450 degrees C, thin films of molybdenum nitride were obtained. With temperature of deposition increased from 450 degrees C to 650 degrees C, the ratio C/Mo increased from 0.03 to 0.5 whereas the ratio C/Mo decreased from 0.7 to 0.3. Thus, thin films of molybdenum carbonitride were deposited at 650 degrees C.
  • Thumbnail Image
    Item type:Item,
    STUDY OF THE LOSS OF PATTERN DEFINITION IN DIAMOND GROWTH
    (1994-12-15)
    CHEN, CF
    ;
    CHEN, SH
    ;
    交大名義發表
    ;
    材料科學與工程學系
    ;
    National Chiao Tung University
    Selectivity loss (i.e. deposition on a mirror-smooth finished silicon surface) during diamond film growth using a selective deposition technique was investigated. CH4-CO2 gas mixtures without supplying hydrogen were used to enhance the nucleation density. After pattern generation and ultrasonic agitation pretreatment, the Si substrates were dipped into a solution of HF:HNO3:H2O (1:1.1:10) for various lengths of time to increase the pattern definition during the second period of diamond film growth. It was found that the selectivity loss in the diamond films could be significantly reduced by increasing the dipping time. The nuclei formed in the nucleation step were etched using the above solution, which reduced the selectivity loss. Scanning electron microscopy and electron spectroscopy for chemical analysis were used to examine the selectivity loss and morphological change of the as-grown diamond films. It was also found that a higher CH4 concentration resulted in a high selective loss of diamond growth.
  • Thumbnail Image
    Item type:Item,
    OPTICAL CHARACTERIZATION OF DIAMOND SYNTHESIZED USING CH4-CO2 GAS-MIXTURES WITHOUT SUPPLYING HYDROGEN GAS
    (1994-12-15)
    CHEN, CF
    ;
    CHEN, SH
    ;
    HONG, TM
    ;
    LEU, JS
    ;
    交大名義發表
    Diamond films are the optical choice for IR window applications. Polycrystalline diamond films were synthesized in this study by microwave-plasma-assisted chemical vapour deposition (PACVD) using CH4 + CO2 as reactive gases. The primary purpose of this study is to determine the effect of the deposition conditions on the optical properties of PACVD diamond films. Room temperature optical properties of free-standing diamond films were studied by Fourier transform IR spectroscopy. Experimental results indicate that the refractive index of diamond films is comparable with that of natural diamond. The scattering loss caused by the rough surface of as-grown diamond film was reduced using a two-step process and polishing techniques. The resulting reduction in scattering loss increased the transmission intensity. For low temperature deposited diamond film the intensity of absorption due to carbon-hydrogen stretch bands was higher than that for film deposited at a high temperature. IR spectra are fitted with simulated spectra to determine the background absorption caused by the amorphous carbon contained in the films. Additionally, the background absorption of low temperature deposited diamond film was found to be larger than that of a diamond film deposited at 850 degrees C.