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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Highly (111)-oriented Nanotwinned Cu for High Fatigue Resistance in fan-out wafer-level packaging
    (2019-01-01)
    Li, Yu-Jin
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    Theng, Chih-Han
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    Tseng, I-Hsin
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    Chen, Chih
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    Lin, Benson
    Fanout wafer level packaging is a potential solution for combining high electrical performance and low cost. However, with the shrinkage of the package, the mechanical reliability of the copper redistribution layer becomes an important issue. However, based on the processing of fan out packaging, the copper lines were annealed several times during the process. The annealing process is harmful to traditional strengthen mechanisms, but not to columnar grains with high density twinning structure. In this study, the technology of electroplating highly <111>-oriented copper lines was introduced to solve the reliability issue in copper RDLs. By the nature of nano-twinned Cu, the performance of thermal cycling test (TCT) lifetime is much better than normal copper, and the failure mechanisms were discussed in this study.
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    A numerical analysis of progressive and abrupt reset in conductive bridging RRAM
    (2016-06)
    Berco, Dan
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    Tseng, Tseung-Yuen
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    The authors investigate the conduction filament (CF) properties of a Cu- based conductive bridging resistive memory device by implementing a numerical simulation of the low and high resistive states, starting from a random initial distribution of oxygen vacancies (OV) defects states in the resistive switching layer (RSL) to a formed CF and ending in a ruptured state. A calculation approach which accounts for both the statistical nature of the system and the synergetic effect of OV and Cu species on the overall conductance is presented. By defining a disorder parameter, the correlation between the OV initial distribution and the CF reset behavior is analyzed. A dependence of the reset transition, being either abrupt or progressive, on the physical shape of the CF which in turn is affected by this disorder is shown to exist based on the simulation results.
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    Fabrication of Nano-Scale Cu Bond Pads with Seal Design in 3D Integration Applications
    (2011-04-01)
    Chen, K. N.
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    Tsang, C. K.
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    Wu, W. W.
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    Lee, S. H.
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    Lu, J. Q.
    A method to fabricate nano-scale Cu bond pads for improving bonding quality in 3D integration applications is reported. The effect of Cu bonding quality on inter-level via structural reliability for 3D integration applications is investigated. We developed a Cu nano-scale-height bond pad structure and fabrication process for improved bonding quality by recessing oxides using a combination of SiO(2) CMP process and dilute HF wet etching. In addition, in order to achieve improved wafer-level bonding, we introduced a seal design concept that prevents corrosion and provides extra mechanical support. Demonstrations of these concepts and processes provide the feasibility of reliable nano-scale 3D integration applications.