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Low-V-t TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions
(2009-01-01)
Lin, S. H.
;
Liu, S. L.
;
Yeh, F. S.
;
Chin, Albert
;
電子工程學系及電子研究所
We report low-threshold-voltage (V-t) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degrees C. The gate-first and self-aligned TaN/HflLaO n-MOSFETs using Ni/Sb SPID-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm(2)/V . s at a small 1.3-nm equivalent oxide thickness.