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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Thermal decomposition of N2O near 900 K studied by FTIR spectrometry: Comparison of experimental and theoretical O(P-3) formation kinetics
    (1970-01-01)
    Pham, Tien, V
    ;
    Tsay, T. J.
    ;
    Lin, M. C.
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    交大名義發表
    ;
    應用化學系
    The spin-forbidden dissociation reaction of the N2O(X-1 sigma(+)) ground state has been investigated by both quantum calculations and experiments. Ab initio prediction at the CCSD(T)/CBS(TQ5)//CCSD(T)/aug-cc-pVTZ+d level of theory gave the crossing point (MSX) energy at 60.1 kcal/mol for the N2O(X-1 sigma(+)) -> N-2(X1 sigma g+) + O(P-3) transition, in good agreement with published data. The T- and P-dependent rate coefficients, k(1)(T,P), for the nonadiabatic thermal dissociation predicted by nonadiabatic Rice-Ramsperger-Kassel-Marcus (RRKM) calculations agree very well with literature data. The rate constants at the high- and low-pressure limits, k(1)(infinity) = 10(11.90) exp (-61.54 kcal mol(-1)/RT) s(-1) and k(1)(o) = 10(14.97) exp(-60.05 kcal mol(-1)/RT) cm(3) mol(-1) s(-1), for example, agree closely with the extrapolated results of Rohrig et al. at both pressure limits. The second-order rate constant (k(1)(o)) is also in excellent agreement with our result measured by FTIR spectrometry in the present study for the temperature range of 860-1023 K as well as with many existing high-temperature data obtained primarily by shock-wave heating up to 3340 K. Kinetic modeling of the NO product yields measured at long reaction times in the present work also allowed us to reliably estimate the rate constant for reaction (3), O + N2O -> N-2 + O-2, based on its strong competition with the NO formation from reaction (2) which has been better established. The modeled values of k(3) confirmed the previous finding by Davidson et al. with significantly smaller values of A-factor and activation energy than the accepted ones. A least-squares analysis of both sets of data gave k(3) = 10(12.22 +/- 0.04) exp[- (11.65 +/- 0.24 kcal mol(-1)/RT)] cm(3) mol(-1) s(-1), covering the wide temperature range of 988-3340 K.
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    Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment
    (2005-11-01)
    Lu, WT
    ;
    Chien, CH
    ;
    Lan, WT
    ;
    Lee, TC
    ;
    Yang, MJ
    In this work, we found that employing a post deposition N2O plasma treatment following the deposition of HfO2 film can effectively improve the electrical characteristics of p-type channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a HfO2 gate stack in terms of lower gate leakage current, lower interface state density, superior subthreshold swing, higher normalized transconductance and enhanced driving current even though it had led to a slightly higher equivalent oxide thickness (EOT) value of the HfO2 gate stack by around 0.3 nm. In order to clarify the attributes of the improvements, we used charge pumping (CP) measurement to analyze the densities of interface states and bulk traps in the HfO2 gate stacks. The improvements are then ascribed to the higher interface quality offered by the post deposition N2O plasma treatment. Moreover, we found that to more accurately estimate the bulk traps from the CP measurement, the leakage should be taken into account especially at low frequencies. Finally, it was found that the levels of the bulk traps and interface states can be reduced by the N2O plasma treatment, which also helps significantly eliminate the degradation of the gate stack during the subsequent voltage stress.
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    Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
    (1998-10-01)
    Lai, CS
    ;
    Chao, TS
    ;
    Lei, TF
    ;
    Lee, CL
    ;
    Huang, TY
    A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.