<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

20011

Settings

🏛️國立陽明交通大學機構典藏

Access type: Metadata onlySubject: search.filters.subject.PHS

Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Item type:Item,
    2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application
    (2001)
    Chen, SH
    ;
    Chang, EY
    ;
    Lin, YC
    ;
    Lee, CS
    ;
    友訊交大聯合研發中心
    Enhacement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5dBm) with a power-added-efficiency (PAE) of 50.54 %. Under 1.9GHz pi/4-shifted quadrature phase shift keying(QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.