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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
    (2011-04-01)
    Chou, Y. L.
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    Chung, Y. T.
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    Wang, Tahui
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    Ku, S. H.
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    Zou, N. K.
    Discrete nitride program charge loss in a small-area SONOS Flash memory cell during retention is observed. Our measurement shows that a retention V-t of a programmed SONOS cell exhibits a stepwise evolution with retention time. Individual single-program charge-loss-induced threshold voltage shifts (Delta V-t) are characterized. We find the following: 1) The magnitude of Delta V-t exhibits an exponential distribution, which is believed due to a current-path percolation effect caused by random program charges and substrate dopants, and 2) program-state V-t retention loss has large variations in different cells and P/E cycles due to the percolation effect. We develop a Monte Carlo analysis to take into account the distribution of Delta V-t and a tunneling front model to study the spread of a retention V-t distribution in a SONOS Flash memory.
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    Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM
    (2015-11-01)
    Kruchinin, V. N.
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    Aliev, V. Sh.
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    PerevaIov, T. V.
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    Islamov, D. R.
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    Gritsenko, V. A.
    We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (similar to 10-15%) of hafnium sub-oxides HfOy (y < 2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed. (C) 2015 Elsevier B.V. All rights reserved.
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    The Conductive Property of ZnO QDs-SiO(2) and ZnO QDs-SiO(x)N(y) Nanocomposite Films
    (2009-08-01)
    Peng, Yu-Yun
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    Hsieh, Tsung-Eong
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    Hsu, Chia-Hung
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    材料科學與工程學系
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    Department of Materials Science and Engineering
    The dc and ac conductive properties of ZnO QDs-SiO(2) and ZnO QDs-SiO(x)N(y) nancomposite films prepared by the target-attached sputtering method are investigated. Both two nanocomposite samples reveal a typical characteristic of a metal-oxide varistor (MOV) on the J-E plots with distinct threshold electric fields (E(th)) which are affected by the molecular bonding configurations in the matrix and at the dot/matrix interfaces. The two systems exhibit dissimilar dependences of dc conductivity (sigma(dc)) on the ZnO content, revealing the limitation of conventional percolation models in which the surface interaction term is usually ignored. The ac conduction behaviors of the two nanocomposite systems were also analyzed and their percolation concentrations V(c) (22.75% for ZnO QDS-SiO(2) and 20.78% for ZnO QDs-SiO(x)N(y)) are determined by the construction of master curves. Analytical results illustrated that the dielectric matrix type indeed affects the defect configuration and transport behaviors inside ZnO dots. Hence, manipulation of dielectric matrix type can possibly achieve various optical and electrical properties in ZnO QDs-dielectric nanocomposite systems.