學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 49

Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays
(2020-10-01)
Chen, Jui-Yuan
;
Wu, Min-Ci
;
Ting, Yi-Hsin
;
Lee, Wei-Che
;
Yeh, Ping-Hung
Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/p-n ZnO NWs/Ta2O5/Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5 G with AI in near future applications. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Observing topotactic phase transformation and resistive switching behaviors in low power SrCoOx memristor
(2020-06-01)
Lo, Hung-Yang
;
Yang, Chih-Yu
;
Huang, Guan-Ming
;
Huang, Chih-Yang
;
Chen, Jui-Yuan
Recently, complex oxides have been shown to be promising candidate in dielectric materials of resistive random access memory (RRAM). However, the detailed switching information of complex oxide RRAM is still insufficient, and direct observation of the whole switching process is required to figure out the mechanism. In this study, we deposited SrCoOx (SCO) on a niobium-doped SrTiO3 substrate as the dielectric layer via pulsed laser deposition (PLD). The novel SCO device possesses excellent RRAM properties, high cycling endurance, a long data retention time, and uniform distributions of the high resistance state (HRS) and low resistance state (LRS) resistance and Set/Reset voltage. Furthermore, the switching mechanism was investigated by using transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM), which showed that the switching behavior resulted from the topotactic phase transformation. In addition, the whole switching process was observed through in situ TEM, and the results strengthened the findings of the ex situ experiment. The discussion of this switching behavior provides support for a novel aspect of the RRAM switching mechanism and also a new option for the dielectric material in RRAM.
ZrN-Based Flexible Resistive Switching Memory
(2020-05-01)
Kumar, Dayanand
;
Chand, Umesh
;
Siang, Lew Wen
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (10(7)), a rapid speed (45 ns) and stable retention (10(4) s) at 100 degrees C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.
Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer
(2020-07-01)
Wu, Chien-Hung
;
Kuo, Song-Nian
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Zhang, Yu-Xin
Non-volatile memory (NVM) is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Res. Letters, 9(1), p.526). However, some bottlenecks of flash memory have been identified, such as high operation voltage, low operation speed, and poor retention time. Resistive random access memory (RRAM) is considered to be the most promising one to become the next generation NVM device since its simple structure, fast program/erase speed, and low power consumption. In this experiment, the RRAM device is fabricated, and its IGZO (memory) layer is deposited with AP-PECVD technique which can reduce cost of the process. Microwave annealing (MWA) is used to enhance electrical characteristics of the RRAM device (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment results show that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics under bipolar operation, all forming/set/reset voltage for RRAM device is simultaneously lowered.
Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing
(2020-07-01)
Wu, Chien-Hung
;
Kuo, Song-Nian
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Zhang, Yu-Xin
Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor.
A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
(2020-03-15)
Lin, Chih-Yang
;
Chang, Ting-Chang
;
Pan, Chih-Hung
;
Chen, Min-Chen
;
Xu, You-Lin
A technique was proposed to concentrate the distribution of set voltages. After a plasma treatment, the stability of the high-resistive state (HRS) increased, and the distribution of set voltages was more concentrated at 0.8 V, with a sufficient HRS/LRS resistive ratio (similar to 100x). In addition, the surface of the TiN electrode became rougher, causing oxygen to enter the TiN electrode and form a TiON layer, which acts as an oxygen reservoir. The reservoir is confirmed and the conduction model is supported by both electrical and material analyses. We propose that the observed improvement is due to the difference in the TiN electrode surface. (C) 2019 Published by Elsevier B.V.
Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching Memory
(2018-01-01)
Su, P. C.
;
Jiang, C. M.
;
Wang, C. W.
;
Wang, Tahui
;
電子工程學系及電子研究所
The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized and modeled. Our result shows that read voltage induced reduction of oxygen vacancy density in tungsten oxide follows a power law dependence on cumulative read-disturb time. The power factor is independent of SET-state current level. Read disturb failure time is considerably improved by several orders of magnitude as SET-state current level increases a few times. An analytical model to correlate SET-state current level and read disturb failure time is proposed. Since SET-state current level is related to a cross-section of a conductive filament in an oxide, our model is developed based on a relationship between oxide area and critical oxide trap (oxygen vacancy) density from an oxide breakdown model. The validity of the proposed model is supported by experiment results.
Implementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory Computing
(2018-01-01)
Wang, Z. R.
;
Li, Y.
;
Su, Y. T.
;
Zhou, Y. X.
;
Yin, K. S.
RRAM is a promising candidate to construct in-memory computing architecture which can break through the von Neumann bottleneck. Taking advantage of the CMOS compatible 1T1R RRAM, functionally complete Boolean logics can be realized within two steps in a single unit that can suppress sneak pass problem and avoid cascading problem partially. In addition, an 8-bit pre-calculation adder with low computation complexity is designed and demonstrated experimentally to verify the feasibility and efficiency of 1T1R based in-memory computing architecture, which is applicable to future energy-efficient information processing systems.
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
(2008-12-25)
Lin, Chih-Yang
;
Lee, Dai-Ying
;
Wang, Sheng-Yi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
Resistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
(2008-12-25)
Lin, Chih-Yang
;
Lee, Dai-Ying
;
Wang, Sheng-Yi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
Sputter-deposited CeO2 film in the metal-insulator-metal structure exhibits repeatable resistive switching behavior under voltage sweep. Based on the X-ray diffraction patterns and the cross-sectional scanning electron microscope image, the CeO2 film is polycrystalline with columnar grains perpendicular to the bottom electrode. Moreover, due to the symmetric device structure of Pt/CeO2/Pt, the resistive switching behavior is independent of bias polarity so that both positive and negative voltages can switch the device from high conducting state (ON-state) into low conducting state (OFF-state) and then back to ON-state, which is named non-polar resistive switching. The resistance ratio between two memory states is about five orders of magnitude, which is stable over 10(4) S at 0.3 V stress. in addition, the resistance ratio decreases with increasing the current compliance during forming process. The stability of ON-state, OFF-state, and as-deposited film state (the state before performing forming process) against temperature is also investigated in this study, showing that the OFF-state is less stable. (C) 2008 Elsevier B.V. All rights reserved.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results