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Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
(1998-12-14)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
(2010-01-01)
Chang, Chih-Chieh
;
Pan, Fu-Ming
;
Chen, Ching-Wen
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This study performs surface reduction treatments, including hydrogen plasma treatment and rapid thermal anneal (RTA) in hydrogen ambient, to reduce the nitrogen content in the surface layer of the TaNx ultrathin film deposited by plasma-enhanced atomic layer deposition (PE-ALD). A four-point bend delamination test and a pull-off tensile test are used to study the interfacial strength of the PE-ALD thin film with copper. According to X-ray photoelectron spectroscopy and Auger electron spectroscopy, a new chemical phase with a very small nitrogen content, possibly beta-TaNx, is formed on the PE-ALD TaNx thin film after the RTA treatment. The increase in the Ta/N atomic ratio in the RTA-treated TaNx thin film significantly improves the adhesion of the TaNx film with the sputter-deposited Cu layer. However, the hydrogen-plasma-treated TaNx thin film shows a slight decrease in nitrogen content but still demonstrates better adhesion with the Cu layer compared with the as-deposited one. While the Cu overlayer on the RTA-treated PE-ALD TaNx thin film can sustain the thermal anneal at 600 degrees C, the one on the as-deposited TaNx thin film exhibits voiding even at a temperature as low as 400 degrees C.
Application of Aspergillus oryzae and Rhizopus oryzae for Cu(II) removal
(1996-09-01)
Huang, CP
;
Huang, CP
;
環境工程研究所
;
Institute of Environmental Engineering
Biosorption of copper(II) by the untreated and acid-treated fungal biomass has been studied in both batch and column modes. Two species, Aspergillus oryzae and Rhizopus oryzae, were used in this study. A. oryzae mycelia (undergoing acid-washing) exhibit a clear advantage in Cu(II) removal, compared with other adsorbents. The acid-washing process can strongly enhance the adsorption capacity for A. oryzae mycelia. However, acid-washing does not alter the metal adsorption capacity of R. oryzae mycelia. The result indicates that acid-washing is not only a pretreatment step but also a regeneration step in the heavy metal removal process. These dual purposes, therefore, give the acid-washing biomass an indication of successful prospect. Cultivating A. oryzae in pellet form is an effective means of mycelium immobilization. The method established in this study provides the high-yield, uniformly-sized particles (2-3 mm in diameter), which are effective in solid-liquid separation. This pellet column can completely remove metals before breakpoint. After the breakpoint, a significant amount of Cu(II) removal over a long period has been observed. This is thought to be the result of intracellular uptake. Copyright (C) 1996 Elsevier Science Ltd
Effect of Cu-Ion Concentration in Concentrated H3PO4 Electrolyte on Cu Electrochemical Mechanical Planarization
(2010-01-01)
Kung, Te-Ming
;
Liu, Chuan-Pu
;
Chang, Shih-Chieh
;
Chen, Kei-Wei
;
Wang, Ying-Lang
The influence of Cu-ion concentration in a concentrated H3PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/cm(2) when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu(OH)(2) is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/[Cu(OH)(2)+CuO] in the Cu 2p(3/2) X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3425807] All rights reserved.
Extent of Precipitation and Sorption During Copper Removal from Synthetic Wastewater in the Presence of Sulfate-Reducing Bacteria
(2009-06-01)
Hsu, Hsiu-Feng
;
Kumar, Mathava
;
Ma, Ying-Shih
;
Lin, Jin-Gaw
;
環境工程研究所
A sulfate-reducing bacterial culture was successfully enriched from the seed sludge of anaerobic sludge digester. Sulfate-reducing bacteria (SRB) in the enriched culture (around 42%) were characterized by fluorescence in situ hybridization (FISH) with group and genus specific 16S rRNA-targeted oligonucleotide probes. Desulfosarcina, Desulfococcus, Desulfofaba, and Desulfofrigus spp. were identified as the dominant species of the enriched SRB. Subsequently, batch experiments were conducted at initial copper and sulfate concentrations of 10 and 300mg/L, respectively, to quantify the ability of the enriched SRB in simultaneous sulfate reduction and copper removal. Sulfate reduction efficiencies of the culture in the absence (biotic system without copper, BS-1) and the presence (biotic system with copper, BS-2) of copper were 96.8 and 98.8%, respectively, after 6 days. In BS-2, 99.2% copper removal was observed after 1 day. However, 67% of copper was removed by chemical precipitation and bioaccumulation. No significant inhibition of bacterial growth was observed at the copper concentration studied, that is, 10mg/L. Chemical precipitation as hydroxide/carbonate caused a copper removal of 44% in AS-1 (abiotic system without lactate) and 36% in AS-2 (abiotic system with lactate), after 6 days. However, the majority of copper was removed as copper sulfide well before the occurrence of copper hydroxide precipitation. Energy dispersive X-ray spectroscopy (EDS) analysis of the precipitates obtained from biotic and abiotic systems confirmed the origin of copper sulfide as the result of SRB. As a whole, the results of this study could be useful to understand the mechanisms of copper removal, i.e. chemical precipitation, bioprecipitation and biosorption/bioaccumulation during sulfate reduction by SRB.

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