<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Access type: Metadata onlySubject: search.filters.subject.dielectric constant

Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Item type:Item,
    High-Gain Patch-Fed 3D-Printing Fresnel Zone Plate Lens Antenna for 60-GHz Communications
    (2018-01-01)
    Chi, Pei-Ling
    ;
    Pao, Chi-Hsien
    ;
    Huang, Ming-Hui
    ;
    Yang, Tao
    ;
    電機工程學系
    This paper presents a high-gain Fresnel zone plate lens antenna designed for 60-GHz systems. Manufactured with the 3D printing technology and fed by a simple patch on the substrate, the proposed Fresnel lens antenna allows for low-cost fabrication and easy integration with planar circuitry. Experimental results show that the prototype antenna can achieve a 10-dB impedance bandwidth from 56.6 GHz to > 67 GHz and the peak gain of 14 similar to 20 dBi across the bandwidth, corresponding to gain enhancement of 9.2 similar to 10.9 dB.
  • Thumbnail Image
    Item type:Item,
    Comparative role of metal-organic decomposition-derived [100] and [111] in electrical properties of Pb(Zr,Ti)O-3 thin films
    (1997-07-01)
    Chen, SY
    ;
    Chen, IW
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The effect of composition (phase), texture, microstructure and thickness on electrical properties of Pb(Zr1-zTiz)O-3 (PZT) films have been evaluated. Zr-rich PZT films with [111] texture have a higher remanent polarization and dielectric constant, but a lower coercive field as compared with PZT[100] films. Ti-rich PZT films with [100] texture have a higher dielectric constant, but a lower remanent polarization and coercive field as compared with PZT[111] films. Near the morphotropic phase boundary (MPB) composition, films with a mixed texture of [111] and [100] have a higher dielectric constant than PZT[100] and PZT[111] films even though the values of remanent polarization and coercive field of the mixed textured films are in between those of the other two films. Both remanent and saturation polarization are independent of film thickness, whereas dielectric constant decreases but coercive field increases at very small thickness.
  • Thumbnail Image
    Item type:Item,
    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2002-02-17)
    Sun, CL
    ;
    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    The role of CuO-MOx in low-fire high dielectric ceramics for multilayer capacitors
    (1999)
    Chen, SY
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    CuO-based oxide mixtures were selected as sintering aid for (Ba,Ca)(Ti,Zr)O-3 ceramics. Both microstructure and dielectric properties of were remarkably influenced by BaCO3-CuO flux type. With 1 wt % additive of BaCuO2-2.5CuO eutectic phase, (Ba,Ca)(Ti,Zr)O-3 ceramics give high dielectric constant of 11000 and uniform grain size of 4 - 10 mu m when sintered at 1130 degrees C for 1 h. Different kinds of CuO-MOx mixtures were also used to investigate the role of MOx metal oxide in the grain growth and densification of CuO-added (Ba,Ca)(Ti,Zr)O-3 ceramics. The eutectic temperature between CuO and MOx plays an important key in microstructure evolution. Both dielectric properties and microstructure can be further modified with doping secondary oxides.
  • Thumbnail Image
    Item type:Item,
    Integral passives in multi-dielectric substrate
    (2000)
    Wu, LK
    ;
    Tseng, BC
    ;
    Liao, LC
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    Integral passives technology has the potential for achieving denser packaging, more efficient manufacturing processes, better reliability and future replacement of many surface mount devices which will result in savings of volume, mass and cost To improve the circuit performance and obtain greater benefits of the integral passives, multi-dielectric substrates with layer-specific dielectric constant and thickness can be used to design the integral passives. With these different material characteristics we design various integral capacitors in a 6-layer printed wiring boards and then extract various circuit parameters associate with the frequency-dependent equivalent circuit models. From which a comparison between the experimentally measured characteristics and the simulated results of an RF amplifier will be demonstrated.