🏛️國立陽明交通大學機構典藏

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A Flip-Chip-Assembled W-Band Receiver in 90-nm CMOS and IPD Technologies
(2019-04-01)
Li, Chun-Hsing
;
Hsieh, Wan-Ting
;
Chiu, Te-Yen
;
交大名義發表
;
National Chiao Tung University
A flip-chip-assembled W-band receiver composed of a 90-nm CMOS chip and an integrated-passive-device (IPD) carrier is presented in this paper. The chip which integrates a low-noise amplifier, a single-sideband mixer, a frequency doubler (FD), and a wide-band variable-gain amplifier, is flip-chip packaged to the IPD carrier through a low-loss interconnect. The simulated loss of the interconnect without any compensation network is only 0.95 dB at 94 GHz. The FD can provide differential output without any additional lossy balun required, effectively increasing the FD output power, and hence relaxing the local oscillator generation circuit design. The experimental results show that the proposed packaged receiver can provide a variable gain from 11.3 to 48.2 dB, while having an input 1-dB compression point from -43.7 to -29 dBm as the RF frequency is 90 GHz. The intermediate bandwidth and minimum noise figure can be 1.0 GHz and 7.8 dB, respectively. The proposed receiver only consumes 73.9 mW from a 1.2-V supply. As compared with prior works, the proposed receiver exhibits higher gain, lower noise, and lower power dissipation even though a less-advanced 90-nm CMOS technology is adopted. To the best of the authors' knowledge, this is the first W-band CMOS receiver assembled on an IPD carrier reported thus far.
Energy-Effective Sub-Threshold Interconnect Design Using High-Boosting Predrivers
(2012-06-01)
Ho, Yingchieh
;
Chen, Hung-Kai
;
Su, Chauchin
;
電子工程學系及電子研究所
;
電控工程研究所
This paper investigates the performance of the interconnects with repeater insertion in the subthreshold region. A 3X complementary metal-oxide-semiconductor (CMOS) predriver and a 4X one are proposed to enhance the driving capability. As compared to the conventional repeater, the proposed ones have higher energy efficiency. In addition, the results of Monte Carlo analysis indicate that the propose predrivers have higher concentration under the process and temperature variation than conventional one at 0.15 V. A test chip with 3X and 4X predrivers for 10-mm on-chip bus has been fabricated in 65 nm SPRVT CMOS process. The measured results show that the 3X (4X) predrivers can achieve 5 Mb/s (1.5 Mb/s) data rate at 0.15 V with an efficiency of 35.2 fJ (32.8 fJ).
Joint strength of Ag-9Pd-9Ga brazed interconnect and anode-supported electrolyte for solid-oxide fuel cell applications
(2018-09-01)
Chao, Chih-Long
;
Chu, Chun-Lin
;
Fuh, Yiin-Kuen
;
Hsu, Ray-Quen
;
Lee, Shyong
A newly developed Ag-9Pd-9Ga active filler was vacuum brazed, and the mechanical properties between the metallic interconnects (SS430, Crofer22 APU, Crofer22 H) and a Ni-yttria-stabilized zirconia cermet anode were systematically investigated. The results indicate that the bonding between metal and cermet is well established and that the interface is smooth. The joint strength evaluated at both 25? and 800? under shear and tensile loading conditions confirmed that the brazed Ag-9Pd-9Ga sealant compared favorably with its commercially available glass-ceramic GC-9 counterpart.
A Low-Cost Broadband Bondwire Interconnect for Heterogeneous System Integration
(2013)
Li, Chun-Hsing
;
Ko, Chun-Lin
;
Kuo, Chien-Nan
;
Kuo, Ming-Ching
;
Chang, Da-Chiang
A low-cost broadband interconnect, composed of bondwires and transmission lines, is proposed for heterogeneous system integration. By designing the length and the characteristic impedance of the transmission lines, the bondwire effect can be reduced to provide an interconnect with good return loss and low insertion loss. In this work, the chip and the carrier are realized in 90-nm CMOS and GIPD process, respectively. Measured results show that the return loss and the insertion loss are better than 10 dB and 1.1 dB, respectively, from DC to 45.2 GHz.
A Broadband Interconnect for THz Heterogeneous System Integration
(2013)
Li, Chun-Hsing
;
Wu, Jan-Jr
;
Kuo, Chien-Nan
;
Cheng, Yu-Ting
;
Kuo, Ming-Ching
A broadband interconnect for THz heterogeneous system integration is proposed using a resonator coupling technique. Two resonators, deployed on a chip and a carrier, respectively, are coupled through the electromagnetic field to provide a low-loss interconnect in a broadband manner. Simulation results indicate an insertion loss of 0.32 dB at 170 GHz while covering 3-dB bandwidth from 100 to 344 GHz. Measurement can be conducted to verify its performance only from 140 GHz to 220 GHz, due to equipment limit. The measured minimum insertion loss is 0.47 dB at 164 GHz.
A Low-Cost Broadband Bondwire Interconnect for THz Heterogeneous System Integration
(2015)
Li, Chun-Hsing
;
Lai, Chih-Wei
;
Yan, Tzu-Chao
;
Kuo, Chien-Nan
;
電機工程學系
A low-cost broadband bondwire interconnect is proposed for THz heterogeneous system integration. A transversal path composed of two transmission lines and a bondwire is introduced to effectively reduce the bondwire effect of an original signal path consisted of a single bondwire only. Simulation results indicate that the return loss and insertion loss can be better than 15 dB and 2.3 dB from dc to 456 GHz, respectively. Measured interconnect loss is around 0 dB to 1.5 dB from 320 to 340 GHz.

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🏛️國立陽明交通大學機構典藏

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