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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.
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Item type:Item, Gilbert Mixers With Microwave Quadrature/Differential Generators: An Approach for Millimeter-Wave IC(2009) ;Meng, Chinchun ;Tseng, Sheng-Che ;電信工程研究所Institute of Communications EngineeringSeveral microwave passive components can be integrated with active circuits in standard silicon processes for millimeter-wave applications. Passive components such as Marchand baluns, quadrature couplers, and rat-race hybrids are directly implemented on a standard low-resistivity (similar to 10 Omega xcm) silicon substrate for size compactness because of the high dielectric constant. New circuit design concepts such as balanced path loss and distortionless transmission lines are applied to tolerate the unavoidable loss and to maintain the functionality of components.Item type:Item, The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies(2006-04-01) ;Tseng, SC ;Meng, CC ;Li, YH ;Huang, GW電信工程研究所The port-to-port isolation of the micromixer is studied using three different p-type downconversion micromixers in 0.35-mu m CMOS technology. Both the body effect and the well isolation influence the port-to-port isolation significantly. The body effect degrades the LO-to-RF isolation and also deteriorates the LO-to-RF isolation. Without the well isolation, the LO-to-RF isolation drops. However, the RF-to-IF isolation is independent of the body effect and well isolation. The p-type micromixer with a separate N-well and without body effect has the best port-to-port isolation properties; its LO-to-IF, LO-to-RF, and RF-to-IF isolations are -59 dB, -58 dB, and -30 dB, respectively.Item type:Item, SiGe HBT Gilbert downconverter with an integrated miniaturized Marchand balun for UWB applications(2007) ;Tseng, Sheng-Che ;Meng, Chinchun ;Chang, Chia-Hung ;Huang, Guo-Wei電信工程研究所A 15.5-dB conversion gain 0.35-mu m SiGe HBT Gilbert mixer with the lumped-element Marchand balun for 3.1 GHz to 10.6 GHz UWB applications is implemented using standard silicon processes. This mixer has the 1.5-GHz IF 3-dB bandwidth as well as the 15.8-dB noise figure. The balun size is only 0.25 mm x 0.5 mm. Because of the balanced structure of the Marchand balun, the magnitude imbalance and phase difference of outputs are below 1 dB and about 184 degrees, respectively. In the present of a lossy substrate, the dissipated loss of the balun is still less than 4 dB thanks to the advantage of the lumped-element technique. The total current consumption of the entire mixer is 13.9 mA at 5 V voltage supply while the chip size including probing pads is 1 mm x 0.9 mm.Item type:Item, Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology(2007) ;Wu, Tzung-Han ;Meng, Chinchun ;Huang, Guo-Wei ;電信工程研究所Institute of Communications EngineeringA GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.