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Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device
(1970-01-01)
Huang, Wei-Chen
;
Zheng, Hao-Xuan
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tan, Yung-Fang
In this study, a one transistor one resistor (1T1R) structure combining a fin-like low-temperature polycrystalline-silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin-like LTPS transistor, both n-type and p-types show excellent electrical output characteristics. Fin-like structure produces more stable output characteristics. Also, the forming and current-voltage (I-V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about -1.9 V. As for the I-V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin-like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin-like LTPS transistor for application in current integrated circuit processes without difficulty.
Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
(2019-06-01)
Lin, Chun-Chu
;
Chen, Po-Hsun
;
Chen, Min-Chen
;
Chang, Ting-Chang
;
Lin, Chih-Yang
This paper investigates material modifications induced by cosputtering indium-tin oxide (ITO) with gadolinium (Gd) at two different power levels. In addition, resistance switching (RS) properties were also verified for use as an insulator in resistive random access memory (RRAM). Comparison of scanning electron microscope (SEM) measurements for the two different cosputtering powers indicated significant changes of the ITO surface. Transparency was also verified by an N&K analyzer measurement, with results indicating a constant in transparency induced by the lower power Gd doping, indicating potential for transparent applications. Furthermore, the mole fraction ratio defined by X-ray photoelectron spectroscopy reveals a Gd2O3 peak, a likely reason for the ITO thin film becoming less conductive. This ITO/Gd:ITO/TiN RRAM can exhibit stable and robust RS characteristics at a lower forming voltage. In addition, lower operating voltages, including both SET and RESET voltages, can be obtained. Reliability tests including endurance and retention were carried out to confirm its RS stability. The RS mechanism of this ITO/Gd:ITO/TiN device was also investigated with the current-voltage (I-V) fitting method. Moreover, temperature effects were also applied to verify the high-resistance state (HRS) mechanism. Finally, a conduction model was proposed to clarify the RS characteristics and confirm that the ITO/Gd:ITO/TiN device is appropriate for data storage.
Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing
(2018-10-01)
Wang, Zhuo-Rui
;
Li, Yi
;
Su, Yu-Ting
;
Zhou, Ya-Xiong
;
Cheng, Long
In-memory computing architecture is an emerging revolutionary computing paradigm that can break the von Neumann bottleneck. Computing methodology and circuit codesign using the CMOS compatible 1T1R resistive random access memory (RRAM) integration structure is presented in this paper. Functionally complete Boolean logic and arithmetic functions are experimentally demonstrated. With a single 40-nm CMOS process 1T1R unit, each of the 16 binary logics can be realized in two logic steps with an additional readout step for cascading, which shows functional reconfiguration and low computational complexity. Up to 10(7) cycles of NAND and XOR logic operations are performed to validate the correctness and reliability. Moreover, several fundamental adder circuits are designed and experimentally demonstrated in 1T1R devices as the proof of concept of the 1T1R computing architecture. The adders proposed in this paper include a ripple-carry adder and its optimized design and a carry-select adder, which all show promising advantages in nonvolatility, computation speed, and circuit area. This paper reports the most complex yet efficient RRAM-based 8-bit addition function experimentally so far and lays a solid foundation for constructing the future in-memory computing architecture.
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
(2010-08-01)
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
The effects of vanadium doping on resistive switching (RS) characteristics and mechanisms of RF-sputtered SrZrO3 (SZO)-based thin films are investigated in this paper. The physical and electrical properties of SZO-based thin films are modulated by vanadium doping due to the Zr4+ ion replaced by V5+, further affecting the RS parameters of SZO-based thin films. The conduction mechanisms of SZO-based thin films are dominated by ohmic conduction (hoping conduction) and Frenkel-Poole emission for the low resistance state (LRS) and the high resistance state (HRS), respectively. The turn-on process might be attributed to the formation of conducting filaments consisting of oxygen vacancies with the effective barrier height (phi(B,eff)) in the range of 0.10-0.13 eV, whereas the turn-off process might result from thermally assisted oxidation of oxygen vacancies by the Joule heating effect. Furthermore, the introduction of the high valence cation (V5+) in a Zr4+ site of SZO crystalline structure can suppress the formation of oxygen vacancies due to the charge neutrality restriction. Such suppression leads to the changes in the forming voltage, turn-on voltage, HRS resistance, dielectric constant, and phi(B,eff) with vanadium doping concentration up to 0.2 mol%, which is within the solid solubility limit based on our measured lattice constants and Vegard's law.
An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array
(2019-02-01)
Chen, You-Da
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The uneven sneak-path currents in resistive random access memory (RRAM) severely constrain the array size. To overcome this issue, we propose an innovative readout scheme that can fully offset the sneak-path currents in one-resistor (1R) RRAM array. Furthermore, the bit cell resistance (R-cell) in an RRAM array can be simply evaluated as the ratio of read voltage (V-read) to the sensed offset current (I-offset). Even under extreme device distribution, a 512x512 array size is still obtained. This is the largest array among simple 1R RRAM, without using a selector device or extra transistor.
Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM
(2011-03-01)
Cheng, C. H.
;
Chin, Albert
;
Yeh, F. S.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Using stacked covalent-bond-dielectric GeOx on metal-oxynitrideHfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 mu W (0.1 mu A at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10(6) cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
(2011-04-01)
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Yi-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
This paper reports the effects of rapid thermal annealing (RTA) on resistive switching (RS) characteristics and mechanisms of SrZrO3 (SZO)-based memory devices. SZO thin films were deposited on LaNiO3 (LNO) (100)/Pt/Ti/SiO2/Si using radio-frequency magnetron sputtering and were followed by an RTA process in N-2, Ar, and O-2 ambients, respectively, at various temperatures for improving RS performance. Experimental results indicate that an SZO device annealed in O-2 at 600 degrees C (O-2-600) exhibits stable RS properties and has a high device yield (similar to 90%), a reliable retention characteristic (up to 1 x 10(6) s at 100 degrees C), and steady nondestructive readout properties (over 1.4 x 10(4) s at 100 degrees C). However, by increasing RTA temperature to more than 700 degrees C, random formation of LNO (110) precipitates on the bottom surface of SZO grains might shorten the effective thickness of the SZO thin films. Furthermore, a strong electric field possibly occurs at the region between Al top electrodes and low-resistivity LNO precipitates. It is speculated that an RS phenomenon, which occurs within SZO grains instead of on grain boundaries, easily leads to RS failure, further resulting in severe degradation of device yield in the O-2-700 and O-2-800 devices. When compared with other devices, O-2-600 SZO memory devices exhibit highly reliable RS characteristics.
Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
(2018-11-09)
Yang, Chih-Cheng
;
Chen, Po-Hsun
;
Shih, Chih-Cheng
;
Wang, Ming-Hui
;
Tsai, Tsung-Ming
In this study, an oxidation treatment technique suitable for the material and electronic device applications proceeding at low temperature (only 80 degrees C) and high pressure (3000 psi) utilizing a carbon dioxide (CO2) supercritical fluid (SCF), also known as scCO(2), which is supplemented with water molecules, is reported. To demonstrate the possible effects on material and devices for the proposed SCF treatment, an amorphous germanium-sulfur (GeS) thin film and a GeS-based resistance random access memory (RRAM) device are prepared. After the SCF treatment, electrical measurements confirm that the GeS-based RRAM device exhibits a lower forming voltage, more stable resistance switching characteristics, and higher concentration distributions of high and low resistance states when compared to the device without SCF treatment. As for the material effects, both chemical and physical properties are examined based on material analyses results. It is concluded that the original amorphous GeS thin film transforms to a polycrystallized GeO film, confirmed by a reaction model for the SCF treatment illustrating possible oxidation and crystallization effects induced by this SCF treatment. This water-enhanced scCO(2) SCF treatment technique, thus, shows its capability as a feasible synthetic method for material modification as well as suitability for device level applications.
Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory
(2019-03-01)
Chen, Po-Hsun
;
Su, Yu-Ting
;
Chang, Fu-Chen
;
電子物理學系
;
Department of Electrophysics
This paper investigates the issues of oxygen accumulation and variation in the high-resistance state of HfO2-based resistive random access memory (RRAM), with improvement attained by inserting a thin oxygen-vacancy-rich layer of indium-tin-oxide (ITO) film. By acting as the oxygen ion reservoir, this ITO thin film on the TiN electrode can further stabilize resistance switching (RS) characteristics. In terms of reliability, ac endurance, and retention tests confirm stable RS characteristics for the Pt/HfO2/ITO/TiN device. Finally, a conducting model was proposed to explain the influence of the ITO thin layer and clarify the physical mechanism of electrical improvements.
Unipolar Switching Behaviors of RTO WOX RRAM
(2010-02-01)
Chien, W. C.
;
Chen, Y. C.
;
Lai, E. K.
;
Yao, Y. D.
;
Lin, P.
The microstructure and electrical properties of the WOX-based resistive random access memory are investigated in this letter. The WOX layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOX layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.

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