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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 7 of 7

Chaotic behavior of hole mixing tunneling in asymmetric coupled quantum wells
(1997-02-01)
Juang, C
;
Tsai, CB
;
Juang, J
;
應用數學系
;
Department of Applied Mathematics
Coherent oscillatory motion of hole mixing tunneling in asymmetric coupled quantum well structures collapses if the heavy hole state in the first well is aligned with the light hole state in the second well under a significant in-plane vector k(parallel to). The tunneling probability obtained by the time-dependent Schrodinger operator with the Luttinger Hamiltonian in the oscillation collapse region is shown to be a chaotic time series using the simplex projection method. This effect is attributed to the nonlinear interaction of mixing tunnelings between HH to the LH state in the first well and HH to the LH state in the second well. (C) 1997 Elsevier Science Ltd.
Activation of Molecular Hydrogen by Arylcarbenes
(2018-12-12)
Mendez-Vega, Enrique
;
Maehara, Mika
;
Raut, Akshay Hemant
;
Mieres-Perez, Joel
;
Tsuge, Masashi
The hydrogenation reactions of diphenylcarbene 1, fluorenylidene 2, and dibenzocycloheptadienylidene 3 were investigated in solid H-2 and D-2 matrices and in H-2- and D-2-doped argon matrices at cryogenic temperatures. The reactivity of the carbenes towards H-2 increases in the order 1<3<2. Whereas 1 is stable in solid H-2, 2 and 3 react fast under the same conditions via quantum chemical tunneling. In D-2 both 1 and 3 are stable, whereas 2 slowly reacts. The different reactivity of the three carbenes is rationalized in terms of differing carbene stabilization energies.
Absorption enhancement in type-II coupled quantum rings due to existence of quasi-bound states
(2018-01-01)
Hsieh, Chi-Ti
;
Lin, Shih-Yen
;
Chang, Shu-Wei
;
光電工程學系
;
Department of Photonics
The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially separated electrons and holes. We model the bound-to-continuum absorption of type-II quantum rings (QRs) using a multiband source-radiation approach using the retarded Green function in the cylindrical coordinate system. The selection rules due to the circular symmetry for allowed transitions of absorption are utilized. The bound-to continuum absorptions of type-II GaSb coupled and uncoupled QRs embedded in GaAs matrix are compared here. The GaSb QRs act as energy barriers for electrons but potential wells for holes. For the coupled QR structure, the region sandwiched between two QRs forms a potential reservoir of quasi-bound electrons. Electrons in these states, though look like bound ones, would ultimately tunnel out of the reservoir through barriers. Multiband perfectly-matched layers are introduced to model the tunneling of quasi-bound states into open space. Resonance peaks are observed on the absorption spectra of type-II coupled QRs due to the formation of quasi-bound states in conduction bands, but no resonance exist in the uncoupled QR. The tunneling time of these metastable states can be extracted from the resonance and is in the order of ten femtoseconds. Absorption of coupled QRs is significantly enhanced as compared to that of uncoupled ones in certain spectral windows of interest. These features may improve the performance of photon detectors and photovoltaic devices based on type-II semiconductor nanostructures.
Enhanced Absorption Due to Formation of Quasi-Bound States in Type-II Coupled Quantum Rings
(2018-03-01)
Hsieh, Chi-Ti
;
Lin, Shih-Yen
;
Chang, Shu-Wei
;
光電工程學系
;
Department of Photonics
The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially indirect optical transitions. This phenomenon limits the application of type-II nanostructures in photon detections. In this paper, we show that with proper arrangements of conduction barriers, the formation of quasi-bound states can significantly boost up the absorption of type-II coupled quantum rings. Meanwhile, the rapid tunneling of electrons in these leaky states should make the corresponding external quantum efficiency comparable to that of single (uncoupled) rings. These featuresmay improve the performance of photon detectors based on type-II semiconductor nanostructures.
High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
(2016-10-05)
Wang, Jingli
;
Yao, Qian
;
Huang, Chun-Wei
;
Zou, Xuming
;
Liao, Lei
High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
Tunneling IPv6 through NAT with Teredo mechanism
(2005)
Huang, SM
;
Wu, Q
;
Lin, YB
;
資訊工程學系
;
Department of Computer Science
Teredo is a service that enables hosts located behind one or more IPv4 NATs to obtain IPv6 connectivity by tunneling packets over IPv4 UDP Under the national IPv6 deployment project in Taiwan, we developed the first Linux-based Teredo service in 2003. In this paper we explain how IPv6 candidates located behind NATs can enlist the help of "Teredo servers" and "Teredo relays" to learn their "global addresses" and to obtain connectivity, and how clients, servers and relays can be organized in Teredo networks. We also describe in details our strategies for implementing Teredo server and Teredo relay under Linux, and show the performance of different Teredo implementations in public domain.
Photoluminescence of ultra small InAs/GaAs quantum dots
(2005-08-10)
Lin, YG
;
Wu, CH
;
Tyan, SL
;
Lin, SD
;
Lee, CP
The InAs/GaAs quantum dots (QDs) with a baselength of less than 10 nm are studied by the excitation-, temperature-dependent and magneto-photoluminescence (PL). The baselengths of the QDs, calculated by the PL ground state transition energy and estimated by magneto-PL spectra, axe in agreement with the result of atomic force microscopy measurements. By means of the excitation-dependent PL, we demonstrate that only the ground electron and hole states exist when the baselength of the QDs is smaller than about 7.3 nm, whereas the larger dots with a baselength of about 8.7 nm will give rise to one excited hole state. The measured energy separation between the ground and the excited hole states is in good agreement with the theoretical calculation. The transition energy in temperature-dependent PL spectra shows a rapid redshift as the temperature is higher than the critical temperature. The redshift rate is about 2.8 and 2.5 times larger than the values calculated by Varshni's law for small and large dots respectively. The higher redshift rate can be explained by the stronger tunneling effect. In addition, the PL linewidths show a V-shape dependence with the temperature. This behavior could be well described as a tunneling and electron-phonon scattering effect.

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