學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 216

Finger-gate array quantum pumps: Pumping characteristics and mechanisms
(2004-08-01)
Chung, SW
;
Tang, CS
;
Chu, CS
;
Chang, CY
;
電子物理學系
We study the pumping effects, in both the adiabatic and nonadiabatic regimes, of a pair of finite finger-gate array (FGA) on a narrow channel. Connection between the pumping characteristics and associated mechanisms is established. The pumping potential is generated by ac biasing the FGA pair. For a single pair (N=1) of finger gates (FG's), the pumping mechanism is due to the coherent inelastic scattering of the traversing electron to its subband threshold. For a pair of FGA with pair number N>2, the dominant pumping mechanism becomes that of the time-dependent Bragg reflection. The contribution of the time-dependent Bragg reflection to the pumping is enabled by breaking the symmetry in the electron transmission when the pumping potential is of a predominant propagating type. This propagating wave condition can be achieved both by an appropriate choice of the FGA pair configuration and by the monitoring of a phase difference phi between the ac biases in the FGA pair. The robustness of such a pumping mechanism is demonstrated by considering a FGA pair with only pair number N=4.
Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
(1998-02-01)
Chen, LP
;
Chan, YC
;
Chang, SJ
;
Huang, GW
;
Chang, CY
Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.
Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
(1998-02-19)
Jong, FC
;
Huang, TY
;
Chao, TS
;
Lin, HC
;
Wang, MF
The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.
A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multilayer resist system and a single-step electron-beam exposure
(1998-03-01)
Lai, YL
;
Lai, YK
;
Chang, CY
;
Chang, EY
;
材料科學與工程學系
A novel fabrication process of submicron T-shaped gates using an EGMEA and PMIPK multi-layer resist system and e-beam lithography has been developed. Due to the different sensitivities of the EGMEA and PMIPK resists, narrow/wide/narrow resist opening was obtained. The status of the electron scattering and the incident primary electron beams statistically construct the absorbed energy density distribution contours. The absorbed energy density distribution contours in association with the sensitivity feature of the resists and the appropriate development conditions determine the final resist profile. Only a single exposure step and a single development step are required. The simplified fabrication process of T-shaped gates significantly reduces not only the process time but also the production costs. The simple submicron T-shaped gate fabrication process studied provides a suitable technique for the mass manufacture of the advanced InP-based and GaAs-based microwave devices and circuits.
Evaluation of plasma charging damage in ultrathin gate oxides
(1998-03-01)
Lin, HC
;
Chen, CC
;
Chien, CH
;
Hsein, SK
;
Wang, MF
Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.
Rugged surface polycrystalline silicon film formed by rapid thermal chemical vapor deposition for dynamic random access memory stacked capacitor application
(1998-06-01)
Lin, M
;
Chang, CY
;
Huang, TY
;
Kuo, UJ
;
電子工程學系及電子研究所
Polycrystalline silicon films with a rugged surface (rugged poly-Si), deposited by a single-wafer rapid thermal chemical vapor deposition (RTCVD) system suitable for 12 inch wafer fabrication, are studied and the films have been successfully applied to bottom storage electrodes for stacked capacitors in dynamic random access memory cells. Our data show that the rugged poly-Si is actually formed by the nucleation generation on the amorphous silicon surface and subsequent crystalline growth during the annealing step following deposition. We also determined that a wide temperature window exists for the formation of rugged poly-Si (i.e., +/- 15 degrees C) using RTCVD, which is wider than that using low pressure chemical vapor deposition (LPCVD) (i.e., +/-3 degrees C) and ultra high vacuum chemical vapor deposition (UHVCVD) (i.e., +/-10 degrees C). Stacked capacitors fabricated using rugged poly-Si and thin silicon oxide/silicon nitride dielectric film show that for a rugged poly-Si storage electrode with a 60 nm top-layer and 645 degrees C annealing, an effective surface area of approximately 2.9 times that of a conventional poly-Si film electrode is obtained.
Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors
(1998-07-01)
Lee, YS
;
Lin, HY
;
Lei, TF
;
Huang, TY
;
Chang, TC
The passivation effects of pure N-2 plasma on polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been studied and compared with those of NH3 plasma. We found that, similar to the recently-proposed NH3 plasma passivation, N-2 plasma passivation can also effectively improve device parameters such as field effect mobility, threshold voltage subthreshold swing, off current, and on/off current ratio. While the improvement of NH3-passivated devices can be attributed to both hydrogen and nitrogen passivation effects, nitrogen passivation alone is mainly responsible for the improvement of N-2-passivated devices. Zn addition, we round that N-2-passivated devices exhibit much better hot-carrier reliability than NH3-passivated devices. The better hot-carrier reliability of N-2-passivated devices can be explained by the formation of strong Si-N bonds which are difficult to break, while effectively eliminating the weaker N-H bonds, which are inevitable in NH3-passivated devices. The results of a Fourier. transform infrared (FTIR) spectrum analysis performed in this study are consistent with this proposition.
Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing
(1998-07-01)
Luo, JS
;
Lin, WT
;
Chang, CY
;
Tsai, WC
;
電子工程學系及電子研究所
Pulsed KrF laser annealing and vacuum annealing on the interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si were studied. For the Ni/ Si0.76Ge0.24 films annealed at temperatures above 300 degrees C, some Ge-rich Si1-xGex grains were formed between the Ge-deficient Ni germanosilicide grains, resulting in the island structure. For Ni/Si films homogeneous epitaxial NiSi2 films could be grown even at 600 degrees C. Ni silicide (germanosilicide) associated with the amorphous overlayer was generally formed at lower energy densities for Ni/Si, NiSi/Si, Ni/Si0.76Ge0.24 and Ni(Si1-xGex) /Si0.76Ge0.24 systems, respectively. At higher energy densities constitutional supercooling occurred. The energy densities at which constitutional supercooling appeared were higher for NiSi and Ni(Si1-xGex) than for Ni. For the continuous Ni(Si1-xGex) films grown at 200 degrees C in a vacuum furnace, subsequent laser annealing at an energy density of 0.6-1.0 J cm(-2) have shown to render homogeneous Ni(Si0.76Ge0.24)(2) and Si0.76Ge0.24 films without the island structure and Ge segregation. (C) 1998 Elsevier Science S.A. All rights reserved.
Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H
(1998-07-09)
Chen, YA
;
Wu, YH
;
Tsay, WC
;
Laih, LH
;
Hong, JW
To improve the electroluminescence (EL) properties of the nSiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of hole injection efficiency, a thin Mo metal film was used as a buffer layer to prevent reactions between the ITO (indium-tin-oxide) electrode and the p(+)-a-Si:H layer. With the formation of semi-transparent Mo silicide after annealing, a lower EL threshold voltage and a significantly higher brightness for a finished TFLED were achieved. The brightness of the obtained device was 1300cd/m(2) at an injection current density of 600mA/cm(2), and its EL threshold voltage was 14V.
Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition
(1998-10-01)
Lai, WC
;
Chang, CY
;
Yokoyama, M
;
Guo, JD
;
Tsang, JS
GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of trimethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2 degrees. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results