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Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors
(1998-07-01)
Lee, YS
;
Lin, HY
;
Lei, TF
;
Huang, TY
;
Chang, TC
The passivation effects of pure N-2 plasma on polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been studied and compared with those of NH3 plasma. We found that, similar to the recently-proposed NH3 plasma passivation, N-2 plasma passivation can also effectively improve device parameters such as field effect mobility, threshold voltage subthreshold swing, off current, and on/off current ratio. While the improvement of NH3-passivated devices can be attributed to both hydrogen and nitrogen passivation effects, nitrogen passivation alone is mainly responsible for the improvement of N-2-passivated devices. Zn addition, we round that N-2-passivated devices exhibit much better hot-carrier reliability than NH3-passivated devices. The better hot-carrier reliability of N-2-passivated devices can be explained by the formation of strong Si-N bonds which are difficult to break, while effectively eliminating the weaker N-H bonds, which are inevitable in NH3-passivated devices. The results of a Fourier. transform infrared (FTIR) spectrum analysis performed in this study are consistent with this proposition.
Characterization of multilayered Ti/TiN films grown by chemical vapor deposition
(1998-11-02)
Hu, JC
;
Chang, TC
;
Chen, LJ
;
Yang, YL
;
Chang, CY
The resistivity of multilayered Ti/TiN films grown by chemical vapor deposition can be reduced from 240 mu Omega cm (standard sample) to 120 mu Omega cm with NH3 plasma post-treatment for 300 s. Increasing the number of multilayered Ti/TiN mu ms of reduced thickness and a plasma post-treatment technique contributed to reducing the resistivity of TiN films effectively. Smooth multilayered Ti/TiN films were observed by XTEM image. The content of chlorine in the multilayered Ti/TiN film was 1.6 at.%. Therefore, corrosion in the subsequent Al film should be minimized. SIMS depth profiles of the multilayered Ti/TiN sample showed that Ti atom distribution is fairly uniform. The result is in agreement with the observation of XTEM and the measurement of AES depth profiles. The resistivity of multlayered Ti/TiN films can be further reduced to 75 mu Omega cm with an in situ NH3 plasma post-treatment (500 W) for 300 s followed by RTA at 900 degrees C for 60 s. Therefore, low resistivity (<100 mu Omega cm) and low Cl concentration (<2 at.%) CVD TiN films can be achieved by a combination of forming a multilayered Ti/TiN structure, and using NH3 plasma post-treatment and RTA. (C) 1998 Elsevier Science S.A. All rights reserved.
Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H-2 plasma treatment
(1999-06-01)
Liu, PT
;
Chang, TC
;
Mor, YS
;
Sze, SM
;
電子工程學系及電子研究所
The organic silsesquioxane, methylsilsesquioxane (MSQ), has a low dielectric constant because of its low film density compared to thermal oxide. However, the quality of the MSQ film is degraded by the damage caused by oxygen plasma and hygroscopic behavior during photoresist stripping. In this work, we have studied the ability of H-2 plasma treatment to improve the quality of MSQ. The leakage current of MSQ decreases as the H-2 plasma treatment time is increased. The dielectric constant of treated samples remains constant (similar to 2.7). In addition, the thermal stability of MSQ film is significantly promoted. The H-2 plasma treatment can provide additional hydrogen to passivate the inner structure of porous MSQ film, and reduce the probability of moisture uptake. Therefore, H-2 plasma treatment can improve the quality of low-k MSQ film and reduce the issue of photoresist stripping in the integrated process.
Investigation on multilayered chemical vapor deposited Ti TiN films as the diffusion barriers in Cu and Al metallization
(1999-07-01)
Hu, JC
;
Chang, TC
;
Chen, LJ
;
Yang, YL
;
Chen, SY
A novel multilayered chemical vapor deposition (CVD) Ti/TiN structure was found to be a more effective diffusion barrier in Cu metallization than TIN alone. The Ti and TIN films were deposited by plasma enhanced CVD and low pressure CVD, respectively. In order to reduce the concentration of chlorine in the films, NH3 plasma posttreatment was applied to multilayered CVD-Ti/TiN films. The resistivity of the film was reduced from 240 to 120 mu Omega cm using NH3 plasma posttreatment. Cu was electroplated on the multilayered CVD-Ti/TiN films. X-ray diffraction patterns showed a small (002) peak and strong (111) peak from the Cu film. The leakage current was kept low during the device application test indicating the Ti/TiN film possessed an enhanced barrier property over the TiN film alone. (C) 1999 American Vacuum Sotiety. [S0734-2101(99)12004-9].
Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
(1999-07-15)
Luo, JS
;
Lin, WT
;
Chang, CY
;
Shih, PS
;
Pan, FM
Epitaxial Si1-x-yGexCy films have been grown by C+ implantation into Si0.76Ge0.24 films with a dose of 1.0 x 10(16)/cm(2) and subsequent pulsed KrF laser annealing at an energy density of 0.3-1.6 J/cm(2). Upon laser annealing Ce segregation to the film surface and diffusion to the underlying Si appeared at energy densities above 0.8 J/cm(2) and 1.4 J/cm(2), respectively while the depth profiles of C remained nearly unchanged as in the as-implanted Si1-x-yGeyCy film. Concurrently, no SiC and twin were observed. The amount of C incorporated into substitutional sites initially increased with the energy density in the range of 0.3-1.0 J/cm(2), and then saturated at an energy density of 1.0-1.6 J/cm(2). For the Si1-x-yGexCy films grown at 1.0 J/cm(2) for 5 and 20 pulses SiC was formed with its amount increasing with the pulse number because of C segregation to the film surface and the original amorphous/crystal interface where the EOR defects were present. For the Si1-x-yGexCy films grown at energy densities below 1.0 J/cm(2) the reduction of tensile stress mainly resulted from the effect of substitutional carbon incorporation. (C) 1999 Elsevier Science S.A. All rights reserved.
A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
(1999-08-01)
Shih, PS
;
Chang, CY
;
Chang, TC
;
Huang, TY
;
Peng, DZ
We have proposed and successfully demonstrated a novel process for fabricating lightly doped drain (LDD) polycrystalline silicon thin-film transistors (TFT's), The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) oxide performed at 23 degrees C, Devices fabricated with the new process exhibit a lower leakage current and a better ON/OFF current ratio than non-LDD control devices. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be quite promising for future high-performance poly-Si TFT fabrication.
Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane
(1999-09-01)
Chang, TC
;
Liu, PT
;
Mei, YJ
;
Mor, YS
;
Perng, TH
The quality of organic low-k methylsilsesquioxane (MSQ) film is degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the interaction between MSQ and copper is worth investigating. In this work, we have studied the H-2 plasma treatment to improve the quality and enhance the copper penetration resistance of MSQ, Experimental results show the leakage current of MSQ decreases as the H-2 plasma treatment time is increased. The dielectric constant of treated samples also remains constant (similar to 2.7). In addition, the copper diffusion resistance of MSQ film is significantly promoted. The H-2 plasma treatment can provide additional hydrogen to passivate the inner structure of porous MSQ film as well as reduce the probability of moisture uptake and interaction with Cu atoms. Therefore, the low-k dielectric properties of MSQ are significantly enhanced by H-2 plasma treatment. (C) 1999 American Vacuum Society. [S0734-211X(99)05105-7].
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
(1999-10-01)
Chang, TC
;
Liu, PT
;
Mor, YS
;
Sze, SM
;
Yang, YL
The organic silsesquioxane, methylsilsesquioxane (MSQ), has a low dielectric constant because of its lower film density compared to thermal oxide. However. the quality of MSQ film is degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In this work, we studied the N2O plasma treatment for improving the quality of MSQ. The leakage current of MSQ decreases as the N2O plasma treatment time is increased. The dielectric constant of N2O plasma-treated sample remains constant (similar to 2.7). In addition, the thermal stability of MSQ film can be enhanced. The role of N2O plasma is to convert the surface layer of organic MSQ into inorganic type by decomposition of the alkyl group and thus form a passivation layer. The inert passivation layer enhances the resistance to moisture uptake and O-2 plasma attack. Therefore, N2O plasma-treatment greatly improves the quality of low k MSQ film and removes the issue of photoresist stripping in the integrated process. (C) 1999 The Electrochemical Society. S0013-4651(98)10-071-X. All rights reserved.
Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface
(1999-11-01)
Liu, PT
;
Chang, TC
;
Yang, YL
;
Cheng, YF
;
Shih, FY
The interaction between copper and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and hydrogen plasma posttreatment. Owing to serious diffusion of copper atoms in HSQ film, degradation of the dielectric properties are significant with the increase of thermal stress. By applying hydrogen plasma treatment to the HSQ film, however, the phenomena of serious Cu penetration were not observed by electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis even in the absence of diffusion barrier layers. Therefore, hydrogen plasma treatment can effectively block the diffusion of copper in low-k HSQ film.
The novel precleaning treatment for selective tungsten chemical vapor deposition
(1999-11-01)
Chang, TC
;
Mor, YS
;
Liu, PT
;
Sze, SM
;
Yang, YL
The new solutions, hydroxylamine sulfate [(NH2OH)(2)H2SO4] combined with CuSO4, for cleaning Al via were investigated. Tt is found that the cleaning capability of hydroxylamine sulfate combined with CuSO4 is better than that of hydroxylamine sulfate. Low via resistance of electrical test structure is obtained if the via is cleaned by this new cleaning solution. The hydroxylamine sulfate can efficiently remove Al3O2 and leave the clean Al on the surface of via. Then, the Cu ion in this new solution will immediately react with clean Al and form a copper passivating layer on the surface of via. The copper is more stable than aluminum in the environment and hard to be oxidized. Therefore, hydroxylamine sulfate combined with CuSO4 can provide excellent cleaning capability for aluminum via holes. Also, the clean surface on the bottom of via is helpful for tungsten nucleation in via during CVD-W deposition. Therefore, a low via resistance and good selectivity of tungsten plug are obtained when the Al via is precleaned with this new solution. (C) 1999 Elsevier Science S.A. All rights reserved.

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