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Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
(2016-02-01)
Chen, Kai-Huang
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Chang, Kuan-Chang
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Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Liang, Shu-Ping
Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
(2016-04-27)
Chen, Kai-Huang
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Chang, Kuan-Chang
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Chang, Ting-Chang
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Tsai, Tsung-Ming
;
Liang, Shu-Ping
To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (lambda = 400 nm) and red-light (lambda = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
(2017-10-26)
Yuan, Fang-Yuan
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Deng, Ning
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Shih, Chih-Cheng
;
Tseng, Yi-Ting
;
Chang, Ting-Chang
A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 10(9) cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (V-o(+)) which limit electron movement through the switching layer.
Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
(2014-10-21)
Liu, Kuan-Hsien
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Chang, Ting-Chang
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Chou, Wu-Ching
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Chen, Hua-Mao
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Tsai, Ming-Yen
This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel draininduced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast ID-VG and modulated peak/base pulse time ID-VD measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation. (C) 2014 AIP Publishing LLC.
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
(2014-10-06)
Tsai, Jyun-Yu
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Chang, Ting-Chang
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Chen, Ching-En
;
Ho, Szu-Han
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Liu, Kuan-Ju
This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks. (C) 2014 AIP Publishing LLC.
Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs
(2014-12-01)
Liu, Kuan-Ju
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Chang, Ting-Chang
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Yang, Ren-Ya
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Chen, Ching-En
;
Ho, Szu-Han
This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-oninsulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that under grounded body (GB) operation due to the floating body effect (FBE). Furthermore, the degradation is independent on temperature under GB operation, because impact ionization is virtually independent on temperature under large VD. However, the degradation under FB operation becomes less serious with increasing temperature. This is due to a smaller source/body PN junction band offset at a high temperature, which causes fewer accumulated holes at the body terminal and reduces the FBE. (C) 2014 Elsevier B.V. All rights reserved.
Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
(2010-10-01)
Chen, Shih-Cheng
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Chang, Ting-Chang
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Chen, Wei-Ren
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Lo, Yuan-Chun
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Wu, Kai-Ting
In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.
Prevalence of Human Papillomavirus Genotypes in Northern Taiwanese Women
(2010-10-01)
Tsao, Kuo-Chien
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Huang, Chung-Guei
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Kuo, Yung-Bin
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Chang, Ting-Chang
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Sun, Chien-Feng
The prevalence of Human Papillomavirus (HPV) in the general population of northern Taiwan is described. A total of 343 consecutive cervical swabs from women visiting the medical center for routine gynecologic care were included. Cervical cell cytology was examined by the Papanicolaou (Pap) test, and a PCR-based hybridization gene chip analysis was used to identify HPV genotypes. The HPV prevalence in the overall population was 32.4%. When divided into two groups according to cytology, 20.9% of women with normal cytology were HPV positive while 75.3% of women with abnormal cytology were HPV positive. Among positive samples, 68.5% were single type infections while 31.5% harbored multiple HPV types. A total of 32 types of HPV were identified; the leading five were HPV16 (5.8%), HPV58 (5.3%), HPV53 (4.1%), HPV52 (3.8%), and HPV18 (2.3%). Our results constitute baseline data and may provide important implications for future prophylactic programs. The relatively high prevalence of HPV 58, 53, and 52 among northern Taiwanese women has important implications for vaccine development. J. Med. Virol. 82:1739-1745, 2010. (C) 2010 Wiley-Liss, Inc.
Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation
(2010-12-01)
Chen, Te-Chih
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Chang, Ting-Chang
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Chen, Shih-Ching
;
Hsieh, Tien-Yu
;
Jian, Fu-Yen
This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hot-hole injection, the degradation is mainly affected by the lateral electrical field over a critical point.
Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
(2009-12-25)
Chen, Min-Chen
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Chang, Ting-Chang
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Huang, Sheng-Yao
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Chang, Kuan-Chang
;
Huang, Hui-Chun
in this paper, the supercritical CO(2) (SCCO(2)) fluid technology is successfully applied to improve the electrical characteristics of sputtered ZnO TFTs at low temperature (150 degrees C). After the treatment of SCCO(2) fluids mixed with water, the ZnO TFT exhibited superior transfer characteristics and lower threshold voltage. According to X-ray photoelectron spectroscopy (XPS) analyses, the improvements were attributed to the increase of binding energies of Zn-O bonds, hydrogen-related donors and the reduction of traps at the grain boundaries in ZnO thin films. In addition, the crystalline quality and microstructure of ZnO thin films were also investigated by using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The transmittance of the ZnO film was measured by an N&K analyzer 1280 (N&K Technology, Inc.), which is a new type of thin-film measurement system. (C) 2009 Elsevier B.V. All rights reserved.

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