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Now showing 1 - 10 of 16
  • Item type:Item,
    Oxygen Passivation Mediated Tunability of Trion and Excitons in MoS2
    (2017-08-16)
    Gogoi, Pranjal Kumar
    ;
    Hu, Zhenliang
    ;
    Wang, Qixing
    ;
    Carvalho, Alexandra
    ;
    Schmidt, Daniel
    Using wide spectral range in situ spectroscopic ellipsometry with systematic ultrahigh vacuum annealing and in situ exposure to oxygen, we report the complex dielectric function of MoS2 isolating the environmental effects and revealing the crucial role of unpassivated and passivated sulphur vacancies. The spectral weights of the A (1.92 eV) and B (2.02 eV) exciton peaks in the dielectric function reduce significantly upon annealing, accompanied by spectral weight transfer in a broad energy range. Interestingly, the original spectral weights are recovered upon controlled oxygen exposure. This tunability of the excitonic effects is likely due to passivation and reemergence of the gap states in the band structure during oxygen adsorption and desorption, respectively, as indicated by ab initio density functional theory calculation results. This Letter unravels and emphasizes the important role of adsorbed oxygen in the optical spectra and many-body interactions of MoS2.
  • Item type:Item,
    Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures
    (2016-05-01)
    Wang, Zhuo
    ;
    Dong, Zhaogang
    ;
    Gu, Yinghong
    ;
    Chang, Yung-Huang
    ;
    Zhang, Lei
    Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of similar to 20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.
  • Item type:Item,
    Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
    (2014-08-01)
    Chang, Yung-Huang
    ;
    Zhang, Wenjing
    ;
    Zhu, Yihan
    ;
    Han, Yu
    ;
    Pu, Jiang
    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.
  • Item type:Item,
    Enhancing the electrocatalytic water splitting efficiency for amorphous MoSx
    (2014-03-26)
    Hsu, Chang-Lung
    ;
    Chang, Yung-Huang
    ;
    Chen, Tzu-Yin
    ;
    Tseng, Chien-Chih
    ;
    Wei, Kung-Hwa
    Amorphous molybdenum sulfide (MoSx) materials have been considered as cheap and promising catalysts for hydrogen evolution reaction (HER). In this contribution, we report that the amorphous MoSx catalysts prepared by the low temperature thermolysis of the (NH4)(2)MoS4 precursors on carbon clothes (catalyst loading: 3.2 mg/cm(2)) exhibit a Tefal slope of 50.5 mV/dec and a high exchange current density of 1.5 x 10(-3) mA/cm(2) in 0.5 M H2SO4 solutions. Spectroscopic studies of the amorphous MoSx catalysts show that the increase of HER efficiency is positively correlated to the concentration of S-2(2-) species, providing strong evidence to support the argument that S-2(2-) is an active species for electrocatalytic HER. Additionally, the method for preparing catalysts is simple, scalable and applicable for large-scale production. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
  • Item type:Item,
    Large-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applications
    (2014-01-01)
    Huang, Jing-Kai
    ;
    Pu, Jiang
    ;
    Hsu, Chang-Lung
    ;
    Chiu, Ming-Hui
    ;
    Juang, Zhen-Yu
    The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm(2)/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of similar to 13, further demonstrates its applicability for logic-circuit integrations.
  • Item type:Item,
    Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
    (2014-01-23)
    Zhang, Wenjing
    ;
    Chuu, Chih-Piao
    ;
    Huang, Jing-Kai
    ;
    Chen, Chang-Hsiao
    ;
    Tsai, Meng-Lin
    Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light-sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene is transferable onto MoS2. We demonstrate that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 108. Our experiments show that the electron-hole pairs are produced in the MoS2 layer after light absorption and subsequently separated across the layers. Contradictory to the expectation based on the conventional built-in electric field model for metal-semiconductor contacts, photoelectrons are injected into the graphene layer rather than trapped in MoS2 due to the presence of a perpendicular effective electric field caused by the combination of the built-in electric field, the applied electrostatic field, and charged impurities or adsorbates, resulting in a tuneable photoresponsivity.
  • Item type:Item,
    Comparative study on MoS2 and WS2 for electrocatalytic water splitting
    (2013-09-19)
    Chen, Tzu-Yin
    ;
    Chang, Yung-Huang
    ;
    Hsu, Chang-Lung
    ;
    Wei, Kung-Hwa
    ;
    Chiang, Chia-Ying
    Replacing Pt by earth abundant catalysts is one of the most important tasks toward potential large-scale HER applications. Among many potential candidates, low cost and earth abundant transition metal dichalcogenides such as MoS2 and WS2 have been promising as good H-2 evolution electrocatalysts when they are engineered into the structures with active sites. In this work, we have performed systematic studies on the catalytic reactivity of both MoS2 and WS2 materials produced by one-step and scalable thermolysis from (NH4)(2)WS4 and (NH4)(2)MoS4 precursors respectively. Structural analysis shows that these materials prepared at a higher thermolysis temperature exhibit higher crystallinity. The H-2 evolution electrocatalysts efficiency for the MoS2 prepared at a lower temperature is higher than those at higher temperatures, where amorphous MoS2 or S-2(2-) species instead of crystalline MoS2 is the main active site. By contrast, crystalline WS2 prepared at high temperature is identified to be the key reaction site. Both catalysts display excellent efficiency and durability as an electrocatalyst operating in acidic electrolytes. This work provides fundamental insights for further design and preparation of emergent metal dichalcogenide catalysts, beneficial for the development in clean energy. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
  • Item type:Item,
    Effect of Geometric Nanostructures on the Absorption Edges of 1-D and 2-D TiO2 Fabricated by Atomic Layer Deposition
    (2013-05-08)
    Chang, Yung-Huang
    ;
    Liu, Chien-Min
    ;
    Cheng, Hsyi-En
    ;
    Chen, Chih
    ;
    材料科學與工程學系
    2-Dimensional (2-D) TiO2 thin films and 1-dimensional (1-D) TiO2 nanotube arrays were fabricated on Si and quartz substrates using atomic layer deposition (ALD) with an anodic aluminum oxide (AAO) template at 400 degrees C. The film thickness and the tube wall thickness can be precisely controlled using the ALD approach. The intensities of the absorption spectra were enhanced by an increase in the thickness of the TiO2 thin film and tube walls. A blue-shift was observed for a decrease in the 1-D and 2-D TiO2 nanostructure thicknesses, indicating a change in the energy band gap with the change in the size of the TiO2 nanostructures. Indirect and direct interband transitions were used to investigate the change in the energy band gap. The results indicate that both quantum confinement and interband transitions should be considered when the sizes of 1-D and 2-D TiO2 nanostructures are less than 10 nm.
  • Item type:Item,
    Highly Efficient Electrocatalytic Hydrogen Production by MoSx Grown on Graphene-Protected 3D Ni Foams
    (2013-02-06)
    Chang, Yung-Huang
    ;
    Lin, Cheng-Te
    ;
    Chen, Tzu-Yin
    ;
    Hsu, Chang-Lung
    ;
    Lee, Yi-Hsien
  • Item type:Item,
    The Effect of Geometric Structure on Photoluminescence Characteristics of 1-D TiO2 Nanotubes and 2-D TiO2 Films Fabricated by Atomic Layer Deposition
    (2012)
    Chang, Yung-Huang
    ;
    Liu, Chien-Min
    ;
    Chen, Chih
    ;
    Cheng, Hsyi-En
    ;
    材料科學與工程學系
    TiO2 thin films and TiO2 nanotube arrays were fabricated on Si and quartz substrates by atomic layer deposition (ALD) with the application of anodic aluminum oxide (AAO) template at 400 degrees C. In particular, the thickness of the film and the wall thickness of the nanotubes can be controlled precisely using ALD technique. The photoluminescence (PL) characteristic of TiO2 thin films was improved with increased thickness. However, for TiO2 nanotube arrays, with the decrease of the wall thickness, higher PL intensity was obtained. Compared TiO2 thin film with TiO2 nanotube arrays, TiO2 nanotube arrays exhibited a better performance on PL characteristic due to larger surface area. Owing to larger amount of oxygen vacancies on the surface, compared with the volume factor, surface area was a more important factor that affected the performance of PL characteristics. Therefore, when the volume of TiO2 nanotube arrays became smaller, the ratio of surface area to volume was increased and the influence from the surface area became the dominating factor on the performance of the PL characteristics. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.004207jes] All rights reserved.