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🏛️國立陽明交通大學機構典藏

Access type: Open accessAuthor: search.filters.author.Chen, Chieh-Yang

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    Device Simulation-Based Multiobjective Evolutionary Algorithm for Process Optimization of Semiconductor Solar Cells
    (2013-07-03)
    Li, Yiming
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    Chen, Yu-Yu
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    Chen, Chieh-Yang
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    Shen, Cheng-Han
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    Cheng, Hui-Wen
    This article implements for the first time a numerical semiconductor device simulation-based multiobjective evolutionary algorithm (MOEA) for the characteristic optimization of amorphous silicon thin-film solar cells, based upon a unified optimization framework (UOF). To calculate the device's characteristic, a set of coupled solar cell transport equations consisting of the Poisson equation, the electron-hole current continuity equations, and the photo-generation model is solved numerically. Electrical characteristics, the short-circuited current, the open-circuited voltage, and the conversion efficiency are calculated to analyze the properties of the explored solar cells. The aforementioned device simulation results are used to evaluate the fitness score and access the evolutionary quality of designing parameters via the implemented non-dominating sorting genetic algorithm (NSGA-II) in the UOF. Notably, designing parameters including the material and structural parameters, and the doping concentrations are simultaneously optimized for the explored solar cells. The simulation-based MOEA methodology is useful in optimal structure design and manufacturing of semiconductor solar cells.
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    Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
    (2013-09-01)
    Chen, Chien-Hung
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    Li, Yiming
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    Chen, Chieh-Yang
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    Chen, Yu-Yu
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    Hsu, Sheng-Chia
    In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (110) and (100) orientations of the devices. We further analyze four devices with different surface roughness along (100) and (100) orientations to demonstrate the influence of surface roughness on the total effective mobility. (C) 2013 Elsevier B.V. All rights reserved.
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    Multi-Objective Display Panel Design Optimization using Circuit Simulation-Based Evolutionary Algorithm
    (2012)
    Chen, Yu-Yu
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    Li, Yiming
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    Chen, Chieh-Yang
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    Chiang, Chien-Hshueh
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    傳播研究所
    We for the first time implement a multi-objective evolutionary algorithm (MOEA) to optimize the display panel gate driver circuits with amorphous silicon thin-film transistors (ASG driver circuit). The MOEA is integrated with a circuit simulator based upon a unified optimization framework. The results of this study indicate the developed optimization flow can find the better solutions than a simple GA. The measurement data of the fabricated sample further show the achieved result is robust and superior to the original design. This approach benefits design and manufacturing of display panels in the industry of information and communications technology.