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Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation
(1998-11-01)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Passivation layers of 200 Angstrom sputtered Cr-O as well as reactive sputtered Cr-N-O were studied with respect to the passivation capability against thermal oxidation of Cu in flowing nitrogen and flowing oxygen ambients. In a flowing N-2 ambient, both Cr-O and Cr-N-O passivation layers were able to prohibit oxidation of Cu at temperatures up to 700 degrees C. In an O-2 ambient, the passivation capability of Cr-N-O layer was found to be 500 degrees C, which is 150 degrees C higher than that of Cr-O layer. The superiority of the passivation capability of the Cr-N-O layer is presumably due to decoration of the surface defects and grain boundaries with nitrogen, which provide fast paths for oxygen and copper diffusion. (C) 1998 American Vacuum Society. [S0734-211X(98)11706-7].
Properties of thin Ta-N films reactively sputtered on Cu/SiO2/Si substrates
(1998-06-08)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work studied the thin film properties of 200 Angstrom Ta and Ta-N films reactively sputtered on the Cu/SiO2/Si substrates. The nitrogen atomic concentration in the Ta-N film was found to saturate at about 30%. Excessive sputtering gas flow, especially the N-2 gas, caused surface damage to the sputter deposited films. Thermal annealing in N-2 ambient at temperatures up to 700 degrees C did not change the atomic concentrations and the chemical states of Ta and N in the Ta and Ta-N films. The thermal annealing resulted in the grain growth and the healing of sputter damage, but it also induced new defects in the Ta-N films due to thermal stress. This presents a reliability problem in process application involving high temperature thermal cycle. (C) 1998 Elsevier Science S.A. All rights reserved.
Barrier properties of very thin Ta and TaN layers against copper diffusion
(1998-07-01)
Wang, MT
;
Lin, YC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Diffusion barrier properties of very thin sputtered Ta and reactively sputtered TaN films used as a barrier layer between Cu and Si substrates were investigated using electrical measurement and materials analysis. The Cu/Ta/p(+)-n junction diodes with the Ta barrier of 5, 10, and 25 nm thicknesses were able to sustain a 30 min thermal annealing at temperatures up to 450, 500, and 550 degrees C, respectively, without causing degradation to the device's electrical characteristics. The barrier capability of Ta layer can be effectively improved by incorporation of nitrogen in the Ta film using reactive sputtering technique. For the Cu/TaN/p(+)-n junction diodes with the TaN barrier of 5,10, and 25 nm thicknesses, thermal stability was able to reach 500, 600, and 700 degrees C, respectively. We found that failure of the very thin Ta and TaN barriers was not related to Ta silicidation at the barrier/Si interface. Failure of the barrier layer is presumably due to Cu diffusion through the barrier layer during the process of thermal annealing via local defects, such as grain boundaries and stress-induced weak points.
Thermal stability of selective chemical vapor deposited tungsten contact and effects of in situ N-2 plasma treatment
(1998-07-01)
Wang, MT
;
Wang, PC
;
Chuang, MC
;
Chen, LJ
;
Chen, MC
This work investigates the thermal stability of Al/W/p(+)-n junction diodes, in which the W contact was filled using selective chemical vapor deposition to a thickness of about 450 nm and served as diffusion barrier between the Al and the Si substrate. The effects of in situ N-2 plasma treatment on the barrier effectiveness were also investigated. The Al/W(450 nm)/p(+)-n junction diodes can sustain a 30 min furnace annealing up to 575 degrees C. With an in situ N-2 plasma treatment on the W surface caused a thin layer of WNx to form on the W surface, and the nitrified layer of WNx/W acting as barrier between the AZ and the Si substrate effectively suppressed WAl12 formation at elevated temperatures, resulting in a significant barrier improvement. N2 plasma treatment at 100 W for 300 s enabled the Al/WNx/W(450 nm)lp(+)-n junction diodes to sustain thermal annealing at temperatures up to 625 degrees C without degradation of electrical characteristics. (C) 1998 American Vacuum Society.
Optimization of machining conditions for turning cylindrical stocks into continuous finished profiles
(1998-08-01)
Chen, MC
;
Su, CT
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
The optimization problem involving straight turning operations for bar components with constant finished diameters has received extensive attention. In the real-world turning processes on a computer numerical control (CNC) machine, the cylindrical stocks are frequently machined into their desired continuous profiles. Such turning processes require not only straight turning but also face turning, taper turning and circular turning to complete the removal of stock. However, machining models proposed in the literature do not simultaneously consider these turning operations to optimize machining conditions (parameters). This study formulates a machining model to optimize the machining conditions for turning cylindrical stocks into continuous finished profiles, thereby extending the applications of machining optimization. The usefulness of the developed machining model is finally established through a test example.
Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation
(1998-11-01)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Passivation layers of 200 Angstrom sputtered Cr-O as well as reactive sputtered Cr-N-O were studied with respect to the passivation capability against thermal oxidation of Cu in flowing nitrogen and flowing oxygen ambients. In a flowing N-2 ambient, both Cr-O and Cr-N-O passivation layers were able to prohibit oxidation of Cu at temperatures up to 700 degrees C. In an O-2 ambient, the passivation capability of Cr-N-O layer was found to be 500 degrees C, which is 150 degrees C higher than that of Cr-O layer. The superiority of the passivation capability of the Cr-N-O layer is presumably due to decoration of the surface defects and grain boundaries with nitrogen, which provide fast paths for oxygen and copper diffusion. (C) 1998 American Vacuum Society. [S0734-211X(98)11706-7].
Experience in designing a using TCP as transport protocol VOD system over a dedicated network
(1998-11-01)
Lu, DJ
;
Wang, YC
;
Ho, JM
;
Chen, MC
;
Ko, MT
In this paper we address the problem of designing a TCP[11] and IP[10] (TCP/IP for short) based video on demand (VOD for short) system over a dedicated network based on standard internet protocols, ie., Transmission Control Protocol (TCP for short, IETF RFC 793[11]) and Internet Protocol (IP for short, IETF RFC 791[10]). TCP and IP are usually refered together as TCP/IP. Despite of the general belief that TCP/IP is not suitable for real-time multimedia applications, after testing in laboratory environment for about one year we are confident in announcing that our prototype is both efficient and reliable. This success depends on several important factors. First of all, the system operates on a dedicated network in which there exists no other traffic except a light of background traffic generated by the Ether Switch the major network component used by our prototype. Second system overhead due to the VOD server and the network adaptor card is minimized Third, we maximize disk bandwidth by implementing a proprietary disk file system. Our experiment shows that it requires only about 330 KBytes at the client buffer to smooth packet delay jitters. In our experimental environment, due to resource limitations, up to 40 clients had been tested successfully. By looking at network bandwidth and CPU utilization, we estimate that a single VOD sewer should be able to handle more than 40 interactive clients playing MPEG-1 system streams simultaneously.
Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation
(1998-11-01)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The effects of thermal N-2 annealing on the passivation capability of sputtered Ta and Ta-nitride [Ta(-N)] layers against Cu oxidation in a 200 Angstrom Ta(-N) covered Ta(-N)/Cu/SiO2/Si structures was investigated. The N-2 annealed Ta layers revealed degradation in passivation capability, presumably due to grain growth of the Ta passivation layer. In contrast, the nitrogen-doped Ta-nitride layers showed a contrary trend. For the Ta-nitride layer with 23.5 atom % of nitrogen, passivation capability was effectively improved by N-2 annealing at 300 degrees C. For the Ta-nitride layer with 30.5 atom % of nitrogen, N-2 annealing at higher temperatures (500-700 degrees C) was necessary to improve the passivation capability. The healing of sputtering damage of Ta-nitride passivation layers by the thermal N-2 annealing was responsible, presumably, for the improvement of passivation capability.
Sputtered Cr and reactively sputtered CrNx serving as barrier layers against copper diffusion
(1998-12-01)
Chuang, JC
;
Tu, SL
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The barrier capability of sputter deposited Cr and reactively sputter deposited CrNx films against Cu diffusion in a structure of Cu/barrier/p(+)n junction diodes was investigated by means of thermal annealing at elevated temperatures in conjunction with electrical measurements and material analysis. For a 500 Angstrom thick barrier layer, the barrier capability of a pure Cr layer was limited to temperatures up to 500 degrees C, while CrNx films sputter deposited in a gas mixture of Ar and N-2 showed improved barrier capabilities. With Ar/N-2 flow rates of 24/6 to 24/12 standard cubic centimeters per minute, the deposited CrNx films possessed a much improved barrier capability. In particular, the Cu/CrNx (24/9)/p(+)n junction diodes were capable of sustaining 30 min of thermal anneal at temperatures up to 700 degrees C without degradation of the diodes' electrical characteristics. The failure of Cu/Cr/p(+)n and Cu/CrNx/p(+)n junction diodes under extreme thermal treatment was presumed to arise from two mechanisms: grain boundary diffusion for lightly nitrogen doped CrNx and pure Cr barriers, and localized defect (microcrack) diffusion for excessively nitrogen doped CrNx barriers.
Thin-film properties and barrier effectiveness of chemically vapor deposited amorphous WSix film
(1998-12-01)
Wang, MT
;
Lin, YC
;
Lee, JY
;
Wang, CC
;
Chen, MC
Thin-Film properties and barrier effectiveness against copper (Cu) diffusion of a thin amorphous WSix layer were investigated. The amorphous WSix layer was deposited by the chemical vapor deposition (CVD) method using the SiH4/WF6 chemistry with the activation energy determined to be 3.0 kcal/mol. The CVD-WSix film has a low film stress, low electrical resistivity, and excellent step coverage. The resistivity of the amorphous CVD-WSix layer increases with the deposition temperature, but the residual stress of the layer decreases with the deposition temperature. The WSix/Si structure is thermally stable up to at least 600 degrees C, while the copper-contacted Cu/WSix/Si structure with a 50 nm thick WSix barrier is stable only up to 550 degrees C. Moreover, the Cu/WSix/p(4)-n junction diodes can sustain a 30 min thermal annealing up to 500 degrees C without causing degradation in electrical characteristics. Barrier failure of the WSix layer in the Cu/WSix/Si structure at temperatures above 550 degrees C is attributed to Cu atoms diffusion via fast paths in the WSix layer. These fast paths were presumably developed from grain growth of the WSix layer and/or thermal-stress-induced weak points in the WSix layer.

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