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Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
(2009-12-25)
Chen, Min-Chen
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Chang, Ting-Chang
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Huang, Sheng-Yao
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Chang, Kuan-Chang
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Huang, Hui-Chun
in this paper, the supercritical CO(2) (SCCO(2)) fluid technology is successfully applied to improve the electrical characteristics of sputtered ZnO TFTs at low temperature (150 degrees C). After the treatment of SCCO(2) fluids mixed with water, the ZnO TFT exhibited superior transfer characteristics and lower threshold voltage. According to X-ray photoelectron spectroscopy (XPS) analyses, the improvements were attributed to the increase of binding energies of Zn-O bonds, hydrogen-related donors and the reduction of traps at the grain boundaries in ZnO thin films. In addition, the crystalline quality and microstructure of ZnO thin films were also investigated by using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The transmittance of the ZnO film was measured by an N&K analyzer 1280 (N&K Technology, Inc.), which is a new type of thin-film measurement system. (C) 2009 Elsevier B.V. All rights reserved.
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
(2014-06-01)
Zhang, Rui
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Chang, Kuan-Chang
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Chang, Ting-Chang
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Tsai, Tsung-Ming
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Huang, Syuan-Yong
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
(2014-03-10)
Liu, Kuan-Hsien
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Chang, Ting-Chang
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Chang, Kuan-Chang
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Tsai, Tsung-Ming
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Hsieh, Tien-Yu
This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics exhibit instability for amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) under NGBS, in which on-current degradation and current crowding phenomenon can be observed. When the negative gate bias is applied on the TFT, hydrogen ions will dissociate from ZnO-H bonds and the dissociated hydrogen ions will cause electrical instability under NGBS. The ISE-Technology Computer Aided Design simulation tool and moisture partial pressure modulation measurement are utilized to clarify the anomalous degradation behavior. (C) 2014 AIP Publishing LLC.
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
(2014-01-01)
Chang, Kuan-Chang
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Chen, Jung-Hui
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Tsai, Tsung-Ming
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Chang, Ting-Chang
;
Huang, Syuan-Yong
We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
(2014-02-01)
Ji, Li
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Chang, Yao-Feng
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Fowler, Burt
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Chen, Ying-Chen
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Tsai, Tsung-Ming
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
(2014-02-01)
Chu, Tian-Jian
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Tsai, Tsung-Ming
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Chang, Ting-Chang
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Chang, Kuan-Chang
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Zhang, Rui
In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
(2013-12-21)
Zhang, Rui
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Tsai, Tsung-Ming
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Chang, Ting-Chang
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Chang, Kuan-Chang
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Chen, Kai-Huang
In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices. (C) 2013 AIP Publishing LLC.
Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer
(2013-09-01)
Huang, Sheng-Yao
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Chang, Ting-Chang
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Chen, Min-Chen
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Chen, Te-Chih
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Jian, Fu-Yen
This work presents the light-color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al2O3 passivation layer. The colors of incident photon are varied from red to blue, that incident photon energies are all lower than the optical band gap of IGZO (3.2 eV). The experimental results show that the Al2O3 passivated devices present stable electrical behaviors under different incident lights (Delta V-T<0.1 V of dark and red, Delta V-T<1 V of green, and Delta V-T<4 V of blue), whereas the unpassivation devices exhibit observable negative shifts during NBIS (Delta V-T<1 V of dark and red, Delta V-T>8 V of green, and Delta V-T>15 V of blue). The degradation mechanism of the negative bias stress under illumination of a-IGZO TFTs is dominated by the photo-generated hole trapping at the gate insulator and/or interface between insulator and channel. In this result, the Al2O3 passivation layer can effectively passivate the defect in the a-IGZO film, reducing electron hole pair generated during the illumination processed. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
(2013-10-14)
Su, Yu-Ting
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Chang, Kuan-Chang
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Chang, Ting-Chang
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Tsai, Tsung-Ming
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Zhang, Rui
In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC.
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
(2013-07-01)
Syu, Yong-En
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Zhang, Rui
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Chang, Ting-Chang
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Tsai, Tsung-Ming
;
Chang, Kuan-Chang
Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.

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