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Tetragonal BiFeO3 on yttria-stabilized zirconia
(2015-11-01)
Liu, Heng-Jui
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Du, Yu-Hao
;
Gao, Peng
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Huang, Yen-Chin
;
Chen, Hsiao-Wen
High structural susceptibility of multiferroic BiFeO3 (BFO) makes it a potential replacement of current Pb-based piezoelectrics. In this study, a tetragonal phase is identified based on a combination of x-ray diffraction, scanning transmission electronic microscopy, x-ray absorption spectroscopy, and Raman spectroscopy when BFO is grown on yttria-stabilized zirconia (YSZ) substrates. To distinguish the discrepancy between this tetragonal phase and common cases of monoclinic BFO, piezoelectric force microscopy images and optical property are also performed. It shows a lower electrostatic energy of ferroelectric domains and a large reduction of band gap for BFO grown on YSZ substrate comparing to the well-known one grown on LaAlO3 substrate. Our findings in this work can provide more insights to understand the structural diversity of multiferroic BFO system for further applications. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Magnetic-coupled phase anomaly in mixed-phase BiFeO3 thin films
(2017-08-01)
Huang, Yen-Chin
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Liou, Yi-De
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Liu, Heng-Jui
;
Lee, Hsin-Hua
;
Chen, Yi-Chun
The rich phase diagram of rhombohedral (R)-like and tetragonal (T)-like monoclinic polymorph in strained BiFeO3 (BFO) films brings on various functionalities. Finding correlations of physical ordering parameters in this system is generally difficult because T-like and R-like phases are undistinguishable in many aspects. In this study, the magnetic-coupled structural transitions of the mixed-phase BFO at low temperatures were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. To resolve the complexity resulted from the similarity between T-like and R-like phases, we analyzed the Raman spectra on a micro-scale region with various T/R ratios, which is in situ manipulated by an AFM tip carrying a dc bias. Phonons of T-like and R-like phases were thus successfully separated. Based on temperature-dependent XRD and resolved Raman spectra, we observed two isostructural transitions at around 225 K and 150 K, and they are strongly correlated with the magnetic ordering in the mixed-phase BFO film. Moreover, through the effective spin-lattice coupling, the evolution of the T/R polymorph is changed by the magnetic cooling process at low temperatures. This study provides a pathway to modulate phonon behaviors by magnetic fields in a highly strained system. (C) 2017 Author(s).
Tuning the Competition between Ferromagnetism and Antiferromagnetism in a Half-Doped Manganite through Magnetoelectric Coupling
(2013-09-18)
Yi, Di
;
Liu, Jian
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Okamoto, Satoshi
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Jagannatha, Suresha
;
Chen, Yi-Chun
We investigate the possibility of controlling the magnetic phase transition of the heterointerface between a half-doped manganite La0.5Ca0.5MnO3 and a multiferroic BiFeO3 (BFO) through magnetoelectric coupling. Using macroscopic magnetometry and element-selective x-ray magnetic circular dichroism at the Mn and Fe L edges, we discover that the ferroelectric polarization of BFO controls simultaneously the magnetization of BFO and La0.5Ca0.5MnO3 (LCMO). X-ray absorption spectra at the oxygen K edge and linear dichroism at the Mn L edge suggest that the interfacial coupling is mainly derived from the superexchange between Mn and Fe t(2g) spins. The combination of x-ray absorption spectroscopy and mean-field theory calculations reveals that the d-electron modulation of Mn cations changes the magnetic coupling in LCMO, which controls the enhanced canted moments of interfacial BFO via the interfacial coupling. Our results demonstrate that the competition between ferromagnetic and antiferromagnetic instability can be modulated by an electric field at the heterointerface, providing another pathway for the electrical field control of magnetism.
Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films
(2014-04-24)
Hu, Wei Jin
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Juo, Deng-Ming
;
You, Lu
;
Wang, Junling
;
Chen, Yi-Chun
In this work, switching dynamics of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 MV/m and 180 degrees domain wall energy of 60 mJ/m(2) are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.
Flexible ferroelectric element based on van der Waals heteroepitaxy
(2017-06-01)
Jiang, Jie
;
Bitla, Yugandhar
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Huang, Chun-Wei
;
Thi Hien Do
;
Liu, Heng-Jui
We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.
Revealing the flexoelectricity in the mixed-phase regions of epitaxial BiFeO3 thin films
(2015-01-28)
Cheng, Cheng-En
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Liu, Heng-Jui
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Dinelli, Franco
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Chen, Yi-Chun
;
Chang, Chen-Shiung
Understanding the elastic response on the nanoscale phase boundaries of multiferroics is an essential issue in order to explain their exotic behaviour. Mixed-phase BiFeO3 films, epitaxially grown on LaAlO3 (001) substrates, have been investigated by means of scanning probe microscopy to characterize the elastic and piezoelectric responses in the mixed-phase region of rhombohedral-like monoclinic (M-I) and tilted tetragonal-like monoclinic (M-II,M-tilt) phases. Ultrasonic force microscopy reveal that the regions with low/ high stiffness values topologically coincide with the M-I/M-II,M-tilt phases. X-ray diffraction strain analysis confirms that the M-I phase is more compliant than the M-II,(tilt) one. Significantly, the correlation between elastic modulation and piezoresponse across the mixed-phase regions manifests that the flexoelectric effect results in the enhancement of the piezoresponse at the phase boundaries and in the M-I regions. This accounts for the giant electromechanical effect in strained mixed-phase BiFeO3 films.
Direct spectroscopic evidence of charge reversal at the Pb(Zr0.2Ti0.8)O-3/La0.7Sr0.3MnO3 heterointerface
(2011-01-21)
Wu, Chung-Lin
;
Lee, Pei-Wei
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Chen, Yi-Chun
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Chang, Lo-Yueh
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Chen, Chia-Hao
At the heterointerface of a top ferroelectric Pb(Zr0.2Ti0.8)O-3 (PZT) ultrathin film and a bottom La0.7Sr0.3MnO3 (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.
Permanent ferroelectric retention of BiFeO3 mesocrystal
(2016-10-26)
Hsieh, Ying-Hui
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Xue, Fei
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Yang, Tiannan
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Liu, Heng-Jui
;
Zhu, Yuanmin
Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.
Strain-driven phase boundaries in BiFeO3 thin films studied by atomic force microscopy and x-ray diffraction
(2012-01-17)
Liu, Heng-Jui
;
Liang, Chen-Wei
;
Liang, Wen-I
;
Chen, Hsiang-Jung
;
Yang, Jan-Chi
We report a detailed study on the strain-driven phase transition between the tetragonal-like and rhombohedral-like phases in epitaxial BiFeO3 (BFO) thin films which focuses on their structural nature, thermodynamic stability, and ferroelectric/piezoelectric properties. We first show that the tetragonal-like phase, which has a large c/a ratio (similar to 1.2), in the compressively strained BFO is thermodynamically more favorable at high temperature and high strain state (small thickness). We also report a phase transition between two monoclinic phases at 150 degrees C. The two monoclinic phases are differentiated by their c-axis parameters and tilting angles: The low-temperature phase (M-C) has a c-axis parameter of 4.64 angstrom and a tilting angle (beta = 88.5 degrees) along the a axis, while the high-temperature phase (M-A) has a c-axis parameter of 4.66 angstrom and a tilting angle (beta = 86.8 degrees) along both of the a and b axes. We further show that samples undergoing the M-C-M-A phase transition exhibit ferroelectric polarization rotation and piezoelectric enhancement. Our findings directly unveil the close links between structural changes, polarization rotation, and large piezoelectricity at morphotropic phase boundaries in BiFeO3.
Current-Mode Synthetic Control Technique for High-Efficiency DC-DC Boost Converters Over a Wide Load Range
(2014-08-01)
Su, Yi-Ping
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Luo, Yean-Kuo
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Chen, Yi-Chun
;
Chen, Ke-Horng
;
交大名義發表
This paper proposes a current-mode synthetic control (CSC) technique for the design of boost converters to overcome the difficulty in designing a current-ripple hysteresis boost converter and to maintain high conversion efficiency over a wide load range. The CSC technique has a high accuracy because of the additional voltage path through the error amplifier. A smooth load transient response is maintained when the operation transits from continuous conduction mode with a nearly constant switching frequency to discontinuous conduction mode with a load-dependent switching frequency. Generally, ripple performance, light-load efficiency, and switching frequency are traded off in the design of hysteresis control regulator. In this paper, a balance among the load-dependent switching frequencies at light loads results in high power conversion efficiency compared with conventional pulsewidth modulation converter and attains compact ripple performance. The experimental results show that the output voltage ripple can be kept <50 mV over a wide load current range from 10 to 400 mA, where as power conversion efficiency is maintained at 78% at a load current of 10 mA when the switching frequency is decreased from 5 to 2 MHz.

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