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Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
(2005-01-01)
Kuo, HC
;
Chang, YA
;
Chang, YH
;
Chu, JT
;
Tsai, MY
1.27 mu m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature raised from room temperature to 70 degrees C. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degrees C to 70 degrees C.
InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
(2003-04-01)
Lu, TC
;
Tsai, JY
;
Chu, JT
;
Chang, YS
;
Wang, SC
Long-wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the absence of high refractive index contrast in InP-lattice-matched materials impeded the development of 1.3-1.5 mum VCSELs. Although wafer fusions provided the alternative approaches to integrate the InP-based gain materials with the GaAs/AlAs materials for their inherent high refractive index contrast, the monolithic InP-based lattice-matched distributed Bragg reflectors (DBRs) are still highly attractive and desirable. In this report, we demonstrate InP/InGaAlAs DBRs with. larger refractive index contrast than InP/InGaAsP and InAlAs/InGaAlAs DBRs. The switching between InP and InGaAlAs layers and growth rate control have been done by careful growth interruption technique and accurate in situ optical monitoring in low-pressure metal organic chemical vapor deposition. A 35 pairs 1.55 mum centered InP/InGaAlAs DBRs has the stopband of more than 100 nut and the highest reflectivity of more than 99%. A VCSEL structure incorporating 3 5 pairs InP/InGaAlAs DBR as the bottom mirror combined with a 2lambda thick periodic gain cavity and 10 pairs SiO2/TiO2 top dielectric mirrors was fabricated. The VCSELs lased at 1.56 mum by optical pumping at room temperature with the threshold pumping power of 30 mW. (C) 2002 Elsevier Science B.V. All rights reserved.
Study of GaN light-emitting diodes fabricated by laser lift-off technique
(2004-04-15)
Chu, CF
;
Lai, FI
;
Chu, JT
;
Yu, CC
;
Lin, CF
The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light-emitting diodes (LEDs) were investigated. The LLO-GaN LEDs were fabricated by lifting off the GaN LED wafer structure grown on the original sapphire substrate by a KrF excimer laser at 248 nm wavelength with the laser fluence of 0.6 J/cm2 and transferring it onto a Cu substrate. The LLO-GaN LEDs on Cu show a nearly four-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current up to 400 mA for the LLO-LEDs on Cu was also demonstrated. Based on the emission wavelength shift with the operating current data, the LLO-LEDs on Cu show an estimated improvement of heat dissipation capacities by nearly four times over the light-emitting devices on sapphire substrate. The LLO process should be applicable to other GaN-based LEDs in particular for those high light output power and high operation current devices. (C) 2004 American Institute of Physics.
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
(2004-10-15)
Huang, HW
;
Kao, CC
;
Chu, JT
;
Kuo, HC
;
Wang, SC
We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10(18)CM(-3) and low specific contact resistance value of 2.0 x 10(-4) Omegacm(2) than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process. (C) 2004 Elsevier B.V. All rights reserved.
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
(2004-10-25)
Huang, HW
;
Kao, CC
;
Hsueh, TH
;
Yu, CC
;
Lin, CF
We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl-2/Ar flow rate of 50/20 sccm. ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 x 10(9) to 3 x 10(10) cm(-2) and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150-50 Angstrom and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III-V nanoscale photonic and electronic devices. (C) 2004 Elsevier B.V. All rights reserved.
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
(2005-01-01)
Kuo, HC
;
Chang, YH
;
Chang, YA
;
Lai, FI
;
Chu, JT
The 1.27-mum InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current varies from 1.8 to 1.1 mA and the slope efficiency falls less than similar to35% from 0.17 to 0.11 mW/mA as the temperature is raised from room temperature to 75 degreesC. The VCSELs continuously operate up to 105 degreesC with a slope efficiency of 0.023 mW/mA. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is estimated to be 10.7 GHz(1/2) with modulation current efficiency factor of similar to5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25degreesC to 70degreesC. We also accumulated life test data up to 1000 h at 70degreesC/10 mA.
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
(2005-01-01)
Kao, CC
;
Kuo, HC
;
Huang, HW
;
Chu, JT
;
Peng, YC
We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
(2005)
Chu, JT
;
Liang, WD
;
Kao, CC
;
Huang, HW
;
Chu, CF
Large-area (1000x1000 gm) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
(2005-04-01)
Chu, JT
;
Huang, HW
;
Kao, CC
;
Liang, WD
;
Lai, FI
A large-area GaN-based light-emitting diode (LED) 1000 x 1000 mu m(2) in size with a p-side down configuration was fabricated using wafer bonding and laser lift-off (LLO) techniques. The thin GaN LED was transferred onto a copper substrate without p peeling or cracks. The large-area LEDs showed a uniform light-emission pattern over entire defined mesa area without a transparent contact layer on the p-type GaN. The operating current of the large-area LEDs can be driven up to 1000 mA with continuously increasing light output-power. The light output-power is 240 mW with a driving current of 1000 mA. Large-area emission and high current operation make the LLO-LEDs applicable to high-power LED applications.
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
(2005-04-01)
Chang, YH
;
Kuo, HC
;
Chang, YA
;
Chu, JT
;
Tsai, MY
InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) with 1.27 mu m emission wavelength were grown by metal-organic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature is increased from room temperature to 70 degrees C. With a bias current of only 5 mA, the 3 dB modulation frequency response was measured to be 8.36GHz, which is appropriate for 10Gb/s operation. The maximal bandwidth is measured to be 10.7GHz With a modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA) 1/2. Bit error rates of less than 10(-12) are demonstrated for 10 Gb/s data transmission from 25 degrees C to 70'C. We also accumulated life test data up to 1000 h at 70 degrees C/10 mA.

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