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In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se-2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy
(2015-12-18)
Chen, Shih-Chen
;
Wu, Kaung-Hsiung
;
Li, Jia-Xing
;
Yabushita, Atsushi
;
Tang, Shih-Han
In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se-2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.
High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
(2017-05-02)
Wu, Tsung-Ta
;
Huang, Wen-Hsien
;
Yang, Chih-Chao
;
Chen, Hung-Chun
;
Hsieh, Tung-Ying
Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (I-on)/subthreshold swing (S.S.) of 181 mu A/mu m/107 mV/dec and 188 mu A/mu m/98 mV/dec for NMOSFETs and PMOSFETs in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at V-DD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable MOSFETs and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.
Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting
(2017-10-05)
Kao, Ming-Hsuan
;
Shen, Chang-Hong
;
Yu, Pei-chen
;
Huang, Wen-Hsien
;
Chueh, Yu-Lun
A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC: H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V-OC, J(SC) and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of similar to 9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 mu W/cm(2). Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).
Growth and characterization of Cu(In,Ga)Se-2 thin films by nanosecond and femtosecond pulsed laser deposition
(2014-06-02)
Chen, Shih-Chen
;
Hsieh, Dan-Hua
;
Jiang, Hsin
;
Liao, Yu-Kuang
;
Lai, Fang-I
In this work, CuIn1-xGaxSe2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu-2 (-) Se-x, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.
Toward high efficiency and panel size 30 x 40 cm(2) Cu(I,Ga)Se-2 solar cell: Investigation of modified stacking sequences of metallic precursors and pre-annealing process without Se vapor at low temperature
(2014-11-01)
Wu, Tsung-Ta
;
Huang, Jyun-Hong
;
Hu, Fan
;
Chang, Chia-ho
;
Liu, Wen-Long
Modified stacking sequence of precursors and pre-annealing process on Se vapor at low temperature were applied to Cu(ln,Ga)Se-2 (CIGS) solar. The remarkable improvement of efficiency (5.53-10.10% and further 11.04%) and open circuit voltage (0.41 V-0.53 V and further 0.56 V) comes from a compact, smooth microstructure, and modified depth profile of Ga with suitable thickness of CuGa multi-stacking layers in the top of precursors as well as surface bandgap enhancement via pre-nnealing process without Se vapor followed by a specific non-toxic hydrogen-assisted solid Se vapor selenization process. The effects of microstructural, compositional and electrical characteristics of Ga distribution including accumulation and interdiffusion were examined in detail. Finally, a large-area (40 x 30 cm(2)) CIGS solar cell efficiency with improved open circuit voltage (V-OC) and fill factor (FE) of 36% and 14% has been demonstrated, yielding a promising efficiency of similar to 11.04%. (C) 2014 Elsevier Ltd. All rights reserved.
One-dimensional germanium nanostructures-formation and their electron field emission properties
(2010-11-12)
Wu, Hung-Chi
;
Hou, Te-Chien
;
Chueh, Yu-Lun
;
Chen, Lih-Juann
;
Chiu, Hsin-Tien
Ge nanostructures were synthesized by reduction of GeO(2) in H(2) atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules exhibited remarkable field emission properties with a turn-on field of 4.6 V mu m(-1) and field enhancement factor of 1242.
Toward Omnidirectional Light Absorption by Plasmonic Effect for High-Efficiency Flexible Nonvacuum Cu(In,Ga)Se-2 Thin Film Solar Cells
(2014-09-01)
Chen, Shih-Chen
;
Chen, Yi-Ju
;
Chen, Wei Ting
;
Yen, Yu-Ting
;
Kao, Tsung Sheng
We have successfully demonstrated a great advantage of plasmonic Au nanoparticles for efficient enhancement of Cu(In,Ga)Se-2(CIGS) flexible photovoltaic devices. The incorporation of Au NPs can eliminate obstacles in the way of developing ink-printing CIGS flexible thin film photovoltaics (TFPV), such as poor absorption at wavelengths in the high intensity region of solar spectrum, and that occurs significantly at large incident angle of solar irradiation. The enhancement of external quantum efficiency and photocurrent have been systematically analyzed via the calculated electromagnetic field distribution. Finally, the major benefits of the localized surface plasmon resonances (LSPR) in visible wavelength have been investigated by ultrabroadband pump-probe spectroscopy, providing a solid evidence on the strong absorption and reduction of surface recombination that increases electron hole generation and improves the carrier transportation in the vicinity of pn-juction.
Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory
(2014-09-01)
Huang, Yu-Ling
;
Huang, Chun-Wei
;
Chen, Jui-Yuan
;
Ting, Yi-Hsin
;
Lu, Kuo-Chang
Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.
Fabrication of large-scale single-crystal bismuth telluride (Bi2Te3) nanosheet arrays by a single-step electrolysis process
(2014)
Tsai, Hung-Wei
;
Wang, Tsang-Hsiu
;
Chan, Tsung-Cheng
;
Chen, Pei-Ju
;
Chung, Chih-Chun
Nanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi2Te3)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues. In the present study, we demonstrate a one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of bulk Bi2Te3 with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 mu Omega m, respectively. The formation mechanism of NSAs has been proposed. A 1.12% efficiency of quantum dot-sensitized solar cells with Bi2Te3 NSAs for counter electrode has been demonstrated, indicating that Bi2Te3 NSAs from top-down processing with a high ratio of surface area to volume are a promising candidate for possible applications such as thermoelectrics, dye-sensitized solar cells (DSSCs), and lithium-ion batteries.
A solar-thermal energy harvesting scheme: enhanced heat capacity of molten HITEC salt mixed with Sn/SiOx core-shell nanoparticles
(2014)
Lai, Chih-Chung
;
Chang, Wen-Chih
;
Hu, Wen-Liang
;
Wang, Zhiming M.
;
Lu, Ming-Chang
We demonstrated enhanced solar-thermal storage by releasing the latent heat of Sn/SiOx core-shell nanoparticles (NPs) embedded in a eutectic salt. The microstructures and chemical compositions of Sn/SiOx core-shell NPs were characterized. In situ heating XRD provides dynamic crystalline information about the Sn/SiOx core-shell NPs during cyclic heating processes. The latent heat of similar to 29 J g(-1) for Sn/SiOx core-shell NPs was measured, and 30% enhanced heat capacity was achieved from 1.57 to 2.03 J g (1) K (1) for the HITEC solar salt without and with, respectively, a mixture of 5% Sn/SiOx core-shell NPs. In addition, an endurance cycle test was performed to prove a stable operation in practical applications. The approach provides a method to enhance energy storage in solar-thermal power plants.

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