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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Access type: Open accessAuthor: search.filters.author.Hsu, Hsiao-Hsuan

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Now showing 1 - 10 of 10
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    An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
    (2014-09-01)
    Hsu, Hsiao-Hsuan
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    Chang, Chun-Yen
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    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.
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    Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage
    (2014-09-01)
    Hsu, Hsiao-Hsuan
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    Cheng, Chun-Hu
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    Chiou, Ping
    ;
    Chiu, Yu-Chien
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    Chang, Chun-Yen
    This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm(2)/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications. (C) 2014 Elsevier Ltd. All rights reserved.
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    Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect
    (2014-05-01)
    Zheng, Zhi-Wei
    ;
    Hsu, Hsiao-Hsuan
    ;
    Cheng, Chun-Hu
    ;
    Chen, Po-Chun
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    電子工程學系及電子研究所
    We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 A at 150 degrees C, large off/on resistance window (>200) at 150 degrees C, large rectification ratio of approximate to 300 at 150 degrees C and good current distribution at 85 degrees C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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    Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results
    (2014-03-05)
    Hsu, Hsiao-Hsuan
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    Cheng, Chun-Hu
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    Chiou, Shan-Haw
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    Huang, Chiung-Hui
    ;
    Liu, Chia-Mei
    This study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta-N bonding and a high total energy of -4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer. (C) 2013 Elsevier B. V. All rights reserved.
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    Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure
    (2014-01-01)
    Cheng, Chun-Hu
    ;
    Chou, K. I.
    ;
    Zheng, Zhi-Wei
    ;
    Hsu, Hsiao-Hsuan
    ;
    電子工程學系及電子研究所
    In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 10(6) cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory. (C) 2013 Elsevier B. V. All rights reserved.
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    High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
    (2014-01-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.
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    Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate
    (2013-11-01)
    Hsu, Hsiao-Hsuan
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    Chang, Chun-Yen
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    Cheng, Chun-Hu
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    Yu, Shu-Hung
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    Su, Ching-Yuan
    This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-kappa germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm(2)/(V s), and a robust I-on/I-off ratio of 2.4 x 10(7). The improved device performance can be attributed to the combined effect of high-kappa TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature. (C) 2013 Elsevier Ltd. All rights reserved.
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    Room-temperature flexible thin film transistor with high mobility
    (2013-09-01)
    Hsu, Hsiao-Hsuan
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    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm(2)/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. (C) 2013 Elsevier B.V. All rights reserved.
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    Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor
    (2013-08-01)
    Liao, Sheng Yu
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    Chang, Tsu
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    Hsu, Hsiao-Hsuan
    ;
    Cheng, Chun-Hu
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    Chang, Liann-Be
    In this study, we investigate the grain size effect of high electron mobility transistor devices with ohmic contact metals of stacked Ti/Al/Ni/Au and Ti/Al/Mo/Au. In addition to a comparison of electrical characteristics, the ohmic contacts were also examined by a scratch test for the observation of adhesion behavior. The experimental results demonstrate that the metal grain size is strongly dependent on metal adhesion, which may lead to bonding issues. Moreover, the grain-induced lateral stress lowers the drive current and increases the off-state current owing to the degraded gate swing and transconductance of transistor switching characteristics. (C) 2013 The Japan Society of Applied Physics
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    A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature
    (2013-06-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-kappa SiO2/TiO2/SiO2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm(2)/Vs, and good I-ON/I-OFF ratio of 6.7 x 10(5), which have the potential for the application of high-resolution flexible display.