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Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
(2010-09-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (f(t) and f(max)) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f(max) than f(t). Besides, we found that the noise stemmed from the body resistance (R(b)) would contribute to the output noise current, and degrade the minimum noise figure (NF(min)). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.
Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistors
(2008-04-01)
Hu, Hsin-Hui
;
Chen, Kun-Ming
;
Huang, Guo-Wei
;
Chien, Alex
;
Cheng, Eric
In this work, the effects of temperature on the DC and RF characteristics of lateral-diffused metal-oxide-semi conductor (LDMOS) transistors were studied. Devices with different layout structures were fabricated using a 40 V LDMOS process. The temperature coefficients of the threshold voltage and channel mobility are negative and their values are similar for devices with fishbone and ring structures. In addition, we found that both the cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) decrease with increasing temperature. The variations of f(T) with different temperatures are not only affected by the change in transconductance but also affected by the drain resistance. Finally, the temperature behaviors of S-parameters were measured, and the ring structure showed less S(22) variation with different temperatures than the fishbone structure. We extracted the model parameters of the devices to explain this observation.
Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal-Oxide-Semiconductor Amplifiers
(2009-04-01)
Chiu, Chia-Sung
;
Chang, Ching-Chun
;
Ku, Chia-Lin
;
Peng, Kang-Ming
;
Jeng, Erik S.
A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 mu m process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70 mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications. (C) 2009 The Japan Society of Applied Physics
Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistors
(2009-04-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Huang, Sheng-Yi
;
Hung, Cheng-Chou
This paper presents small-signal and noise modeling for radio-frequency (RF) silicon-on-insulator (SOI) dynamic threshold voltage (DT) metal-oxide-semiconductor field-effect transistors (MOSFETs). The inherent body parasitics, such as source- and drain-side junction capacitances, and access body resistance have been incorporated in this model. In addition, the analytical equations useful for parameter extractions are derived. The modeling results show good agreements with the measured data both in RF small-signal and noise aspects up to 12 GHz. Besides, we have made comparisons of important model parameters for DT and standard MOSFETs. The extracted parameters show reasonable trend with respect to applying voltages and channel lengths, which reveals the accuracy of the extraction results using our proposed method. (C) 2009 The Japan Society of Applied Physics
Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact
(2013-09-01)
Chen, Kun-Ming
;
Chen, Bo-Yuan
;
Chiu, Chia-Sung
;
Huang, Guo-Wei
;
Chen, Chun-Hao
In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones.
Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors
(2013-08-01)
Chen, Kun-Ming
;
Tsai, Tzu-I
;
Lin, Ting-Yao
;
Lin, Horng-Chih
;
Chao, Tien-Sheng
In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 mu m. Owing to the short gate length and adoption of salicide process, cutoff frequency (f (T)) of 17 GHz and maximum oscillation frequency of similar to 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of f (T) with channel thickness is mainly due to the change in transconductance.
2.4/5.7-GHz Dual-Band Dual-Conversion Architecture With Correlated LO Signal Generators
(2009)
Syu, Jin-Siang
;
Meng, Chinchun
;
Yu, Sheng-Wen
;
Wu, Tzung-Han
;
Huang, Guo-Wei
A 2.4/5.7-GHz dual-band dual-conversion downconverter is demonstrated using 0.35-mu m SiGe hetero-junction bipolar transistor (HBT) technology. This downconverter employs a complex dual-conversion system and a complex filter to reject the first and second image signals, respectively. The LO(1) frequency is 2.5 times the LO(2) frequency and is generated by a divide-by-two divider, a frequency doubler and a single-sideband up-converter. As a result, the correlated LO signals maintain excellent image-rejection performance of the dual-conversion system while only one LO input is needed. The downconverter achieves a 40/39-dB image-rejection ratio of the first image and a 44/46-dB image-rejection ratio of the second image for 2.4/5.7-GHz modes, respectively.
A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.
Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability
(2012-06-01)
Yuan, Jiann-Shiun
;
Yen, Hsuan-Der
;
Chen, Shuyu
;
Wang, Ruey-Lue
;
Huang, Guo-Wei
A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.
Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors
(2012-02-01)
Chen, Kun-Ming
;
Mou, Zong-Wen
;
Kuo, Hao-Chung
;
Chiu, Chia-Sung
;
Chen, Bo-Yuan
The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal-oxide-semiconductor (LDMOS) transistors were investigated. A constant bias channel hot-carrier stress was applied at room temperature. After applying 3 h of hot-carrier stress, the on-resistance and saturation drain current degradations are 18 and 9%, respectively. However, the degradations of the cutoff frequency and maximum oscillation frequency were less than 2% when the devices were biased before the onset of quasi-saturation. In addition, we found that the degradations of high-frequency parameters are not related to the change in transconductance but to the changes in gate capacitances. Finally, S-parameter variations under hot-carrier stress were also examined in this study. The observations of S-parameter variations are important for RF power amplifier design. (C) 2012 The Japan Society of Applied Physics

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