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Experimental investigation of wavelength-tunable WADM and OXC devices using strain-tunable fiber Bragg gratings
(1999-10-01)
Liaw, SK
;
Ho, KP
;
Lin, CL
;
Chi, S
;
光電工程學系
Two reconfigurable wavelength add/drop multiplexer (WADM) and optical cross-connect (OXC) devices based on strain-tunable fiber Bragg gratings (ST-FBGs) are proposed. The feasibility of WADM is verified by measuring the bit-error-rate performance of the dropped (cross-connect) and pass-through (no cross-connect) channels over a 50- and 100-km standard single-mode fiber for a 2.5 Gb/s system. Compared to back-to-back transmission, a negligible power penalty of only 0.2 dB is observed. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Stabilization of buoyancy-driven unstable vortex flow in mixed convection of air in a rectangular duct by tapering its top plate
(2000-02-01)
Tseng, WS
;
Lin, WL
;
Yin, CP
;
Lin, CL
;
Lin, TF
Stabilization of the buoyancy-driven unstable mixed convective vortex air flow in a bottom heated rectangular duct by tapering its top plate is investigated experimentally. Specifically, the duct is tapered so that its aspect ratio at the duct inlet is 4 and gradually raised to 12 at the exit of the duct. In the study the secondary flow in the duct is visualized and the steady and transient thermal characteristics of the flow are examined by measuring the spanwise distributions of the time-average temperature. The effects of the Reynolds and Grashof numbers on the vortex flow structure are studied in detail. Moreover, the spanwise-averaged Nusselt numbers for the horizontal rectangular and tapering ducts are also measured and compared. Furthermore, the time records of the air temperature are obtained to further detected the temporal stability of the flow. Over the ranges of the Re and Gr investigated for 5 less than or equal to Re less than or equal to 102 and 1.0X10(4)less than or equal to Gr less than or equal to1.7X10(5), the vortex flow induced in the rectangular duct exhibits temporal transition from a steady laminar to time periodic and then to chaotic state at increasing buoyancy-to-inertia ratio. Substantial change in the spatial structure of the vortex flow is also noted to accompany this temporal transition. The results for the tapering duct indicate that more vortex rolls can be induced due to the increase in the aspect ratio of the duct with the axial distance. But the vortex rolls are weaker and are completely stabilized by the tapering of the top plate.
The characterization of nitrogen content, diamond-like carbon field emission arrays using a magnetic filtered arc method
(2000-12-01)
Chen, CF
;
Shen, CH
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Uniform and large area pyramid-shape diamond-like carbon (DLC) field emission arrays are successfully deposited using the filtered are deposition (FAD) system. Nitrogen gas serves as the dopant source to deposit the diamond-like carbon films on the inverted pyramid-shape SiO2 substrates. Experimental results indicate that the current-voltage (I-V) value of field emission arrays is closely related to the diamond-like carbon film quality. The amount of N-2 content in the film influences the composition of the diamond-like carbon, sp(2) bonding carbon and graphite. It was found that the sp? bonding carbon content of the diamond-like carbon increases with increasing N-2 doping. With nitrogen doping, the emission anode current of the diamond-like carbon film significantly increases, eventually reaching 142 muA at a voltage of 30 V, at heavily N-doped concentrations (10 seem), when the films reach a high defect density. (C) 2000 Elsevier Science B.V. All rights reserved.
Fabrication and characterization of phosphorus-doped diamond field emitters in triode-type field emission arrays
(2001-03-01)
Chen, CF
;
Tsai, CL
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this work, we present a novel scheme that involves a new fabrication process for gate-structured metal-insulator-semiconductor (MIS) diodes using IC technology. Using a bias-assisted microwave-plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped emitters completes this process. A comparison of the held emission characteristics of two types of non-doped dendrite-like and P-doped nanotube-like diamond emitters with a 4-mum gate aperture is made. Phosphorus doping can enhance the electrical characteristics by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped and P-doped emitters is 15 and 5 V, respectively. Phosphorus doping can enhance the electrical properties by increasing the emission current, since the field emission current (I-a) of non-doped and P-doped emitters is 4 muA (at V-gc = 45 V) and 322 muA (at V-gc = 120 V), respectively. The emission current of P-doped emitters is approximately 80-fold larger than that of non-doped diamond emitters. (C) 2001 Elsevier Science B.V. All rights reserved.
Reactively sputtered amorphous TaSixNy films serving as barrier layer against copper diffusion
(2001-06-01)
Lin, CL
;
Ku, SR
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Reactively sputtered amorphous TaSixNy (x = 1.4, v = 2.5) films of different thicknesses (5 to 40 nm) serving as diffusion barriers were studied for Cu metallization. The Cu/TaSixNy/p(+)n junction diodes with 5-nm-thick TaSixNy barriers were able to sustain a 30 min thermal annealing at temperatures up to 400 degreesC without degradation of the electrical characteristics. With thicker barriers of 10, 20- and 40-nm-thick TaSixNy layers, the thermal stability temperatures of the Cu/TaSixNy/p(+)n junction diodes were increased to 500, 550 and 650 degreesC, respectively. The amorphism, of TaSixNy films on Si substrates remains unchanged at temperatures up to 800 degreesC, whereas the presence of a Cu overlayer on the surface of the TaSixNy/Si structure accelerates the formation of Ta-silicide. Failure of the amorphous TaSixNy diffusion barrier is presumably due to Cu diffusion through the barrier layer by way of localized defects.
Electronic properties of phosphorus-doped triode-type diamond field emission arrays
(2001-11-01)
Chen, CF
;
Tsai, CL
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
Characterization of phosphorus-doped and boron-doped diamond-like carbon emitter arrays
(2001-11-01)
Tsai, CL
;
Chen, CF
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
We synthesized phosphorus-doped and boron-doped emitters by using trimethylphosphite P(OCH3)(3) and trimethylborate B(OCH3)(3) as doping sources in a microwave plasma chemical vapor deposition system. Based on our experimental results from scanning electron microscopy and Raman spectra, there is much difference among undoped, phosphorus-doped, and boron-doped diamondlike material. In addition, doping both phosphorus and boron can enhance electric properties by reducing the turn-on voltage and can increase the emission current density. The turn-on voltages of undoped, boron-doped, and phosphorus-doped emitters in triode-type field emitter arrays are 15, 8, and 5 V, respectively. The emission currents of boron-doped and phosphorus-doped emitters are about 20 and 80 times larger than the undoped. (C) 2001 American Institute of Physics.
Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrate
(2002-01-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Chemically vapor deposited (CVD) Cu films on TiN substrates with and without Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TiN substrate have a number of favorable properties over films deposited on a TiN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and markedly increased ( 111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. A combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed in order to achieve low-resistivity and highly (111)-oriented Cu film deposition. In this way, Cu films with a resistivity of 1.90muOhm.cm and a Cu(111)/Cu(200) peak ratio of 7.08 were obtained.
Phase behavior and hydrogen bonding in ternary polymer blends of phenolic resin/poly(ethylene oxide)/poly(epsilon-caprolactone)
(2002-01-01)
Kuo, SW
;
Lin, CL
;
Chang, FC
;
應用化學系
;
Department of Applied Chemistry
The phase behavior and hydrogen bonding in ternary polymer blends of phenolic resin, poly(ethylene oxide) (PEO), and poly(epsilon -caprolactone) (PCL) were investigated by using differential scanning calorimetry (DSC) and Fourier transform infrared spectroscopy (FTIR). Although all three binary blends are respective miscible, there exists a closed immiscibility loop in the phase diagram due to the so-called "Delta chi" and "DeltaK" effects in this hydrogen-bonded ternary polymer system. The interassociation equilibrium constant based on the Painter-Coleman association model between phenolic resin and PEO can be indirectly calculated from the fraction of hydrogen-bonded carbonyl groups. Quantitative analyses show that the hydroxyl-ether interassociation is more favorable than the hydroxyl-carbonyl interassociation at room temperature. The interaction energy density value of B-PEO/PCL = -2.85 cal/cm(3) was obtained by comparing the theoretically predicted phase diagram with experimental data.
Hot filament for in situ catalyst supply in the chemical vapor deposition growth of carbon nanotubes
(2002-01-15)
Chen, CF
;
Lin, CL
;
Wang, CM
;
材料科學與工程學系
;
Department of Materials Science and Engineering
A simplified chemical vapor deposition (CVD) method is described for in situ synthesis of multiwalled carbon nanotubes. The synthesis apparatus is similar to, that used to deposit CVD diamond. However, an Fe-Cr wire is selected and coiled as the filament to grow nanotubes. The tubes crow because the filament acts as both a heat source for pyrolysis, and a source of metal for the catalyst. The evaporated metal atoms can be considered to catalyze the growth of carbon nanotubes. The system has the potential to inexpensively synthesize large amounts of nanotubes continuously by combining physical and chemical vapor deposition.

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