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Access type: Open accessAuthor: search.filters.author.Su, Yu-Ting

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    Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
    (2014-01-01)
    Chang, Kuan-Chang
    ;
    Chen, Jung-Hui
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Huang, Syuan-Yong
    We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
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    High performance of graphene oxide-doped silicon oxide-based resistance random access memory
    (2013-11-21)
    Zhang, Rui
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chen, Kai-Huang
    In this letter, a double active layer (Zr:SiO (x) /C:SiO (x) ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO (x) layer. Compared with single Zr:SiO (x) layer structure, Zr:SiO (x) /C:SiO (x) structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
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    Characteristics of hafnium oxide resistance random access memory with different setting compliance current
    (2013-10-14)
    Su, Yu-Ting
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Zhang, Rui
    In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC.
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    Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
    (2013-07-01)
    Syu, Yong-En
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
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    Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
    (2013-08-19)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Chen, Kai-Huang
    In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.
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    Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
    (2013-05-01)
    Chang, Kuan-Chang
    ;
    Pan, Chih-Hung
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Zhang, Rui
    In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)(2) fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2.
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    Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
    (2013-05-01)
    Chang, Kuan-Chang
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Lou, J. C.
    In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
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    Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
    (2013-04-01)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Wu, Hsing-Hua
    ;
    Chen, Kai-Huang
    To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
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    Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
    (2013-03-01)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Wu, Hsing-Hua
    ;
    Chen, Jung-Hui
    Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.
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    Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
    (2012-12-01)
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Chang, Geng-Wei
    ;
    Syu, Yong-En
    In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.