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Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
(2016-02-01)
Chen, Kai-Huang
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Liang, Shu-Ping
Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
(2016-04-27)
Chen, Kai-Huang
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Liang, Shu-Ping
To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (lambda = 400 nm) and red-light (lambda = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
(2017-10-26)
Yuan, Fang-Yuan
;
Deng, Ning
;
Shih, Chih-Cheng
;
Tseng, Yi-Ting
;
Chang, Ting-Chang
A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 10(9) cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (V-o(+)) which limit electron movement through the switching layer.
Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor
(2014-11-01)
Fuh, Chur-Shyang
;
Liu, Po-Tsun
;
Huang, Wei-Hsun
;
Sze, Simon M.
;
電子工程學系及電子研究所
This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 degrees C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm(2)/Vs, threshold voltage (V-th) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 degrees C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16x10(17) cm(-3)eV(-1) and 4.38x10(12) cm(-2) eV(-1), respectively. The positive bias stability of 400 degrees C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
(2014-09-01)
Yang, Jyun-Bao
;
Chang, Ting-Chang
;
Huang, Jheng-Jie
;
Chen, Yu-Ting
;
Tseng, Hsueh-Chih
This letter investigates various oxygen concentrations in indium oxide films which induce different resistance switching behaviors, including two self-compliance behaviors and a two-step set process. The accumulated oxygen ions produce an oxygen-rich indium oxide film, which can be considered as a variable series resistor after the forming process. Analyses indicate that the lower self-compliance current can be attributed to this larger variable series resistor from the additional oxygen ions. The more significant oxidation reaction decreases the current of the high resistance state. Hence, power consumption can be reduced effectively.
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
(2014-06-01)
Zhang, Rui
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Huang, Syuan-Yong
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
(2014-03-31)
Liu, Kuan-Hsien
;
Chang, Ting-Chang
;
Wu, Ming-Siou
;
Hung, Yi-Syuan
;
Hung, Pei-Hua
This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation. (C) 2014 AIP Publishing LLC.
Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
(2014-04-14)
Yang, Jyun-Bao
;
Chang, Ting-Chang
;
Huang, Jheng-Jie
;
Chen, Yu-Chun
;
Chen, Yu-Ting
In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor. (C) 2014 AIP Publishing LLC.
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
(2014-01-01)
Chang, Kuan-Chang
;
Chen, Jung-Hui
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Huang, Syuan-Yong
We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
(2014-02-01)
Ji, Li
;
Chang, Yao-Feng
;
Fowler, Burt
;
Chen, Ying-Chen
;
Tsai, Tsung-Ming
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

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