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CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS
(1993-10-14)
CHEN, HR
;
LEE, CP
;
CHANG, CY
;
TSAI, KL
;
TSANG, JS
The current gain of an AlAs/GaS tunnelling emitter bipolar transistor (TEBT) is found to increase monotonically with barrier thickness in the range 25-200 angstrom and fall off for barrier thickness increasing from 200 to 500 angstrom. It is found that a thicker barrier can suppress the base-to-emitter hole injection better and increase the current gain, but a barrier which is too thick decreases the current gain due to the suppression of the electron current.
DUAL-WAVELENGTH BRAGG REFLECTORS USING GAAS/ALAS MULTILAYERS
(1993-10-28)
LEE, CP
;
TSAI, CM
;
TSANG, JS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Dual-wavelength Bragg reflectors have been demonstrated using GaAs/AlAs multilayer heterostructures. Desired reflection bands can be obtained by adding proper phase shifters in a GaAs/AlAs periodic multilayer structure. The structure is based on the digital representation of the addition of two periodic functions.
COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKER
(1994-01-01)
LIU, DC
;
LEE, CP
;
TSAI, KL
;
TSANG, JS
;
CHEN, HR
By fast change of the As-2 flux using a high temperature valved cracker, we have demonstrated the growth of strained InxGa1-xAs quantum wells with different compositions. The modulation of composition is due to the change in incorporation rates of the group III atoms under different As-2 fluxes. Photoluminescence (PL) emission from the quantum wells clearly indicates the change in composition. A change of In composition from 20.6% to 8.5%, has been achieved by changing the V/III beam-equivalent-pressure (BEP) ratio from 11.7 to 3.9. By this technique of composition modulation, we have fabricated strained InxGa1-xAs/GaAs single quantum well lasers with different emission wavelengths.
VERTICAL INTEGRATION OF A GAAS/ALGAAS QUANTUM-WELL LASER AND A LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTOR
(1994-03-03)
TSANG, JS
;
LEE, CP
;
TSAI, KL
;
CHEN, HR
;
電子工程學系及電子研究所
A short-wavelength (approximately 0.8mum) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (approximately 8mum) GaAs/AlGaAs multiple-quantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20mum. The quantum-well detector has a peak response at 8mum and a responsivity of 0.7A/W.
HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPING
(1994-08-01)
CHEN, HR
;
HUANG, CH
;
CHANG, CY
;
LEE, CP
;
TSAI, KL
An Npn heterojunction bipolar transistor with a Si-delta-doped layer at the emitter-base hetero-interface is demonstrated. The Si delta-doped layer reduces the potential spike at the emitter junction. This design reserves the abruptness of the heterojunction, reduces electron barrier and increases the hole barrier simultaneously. Experimental results show that the HBT's turn-on characteristics are greatly improved while the current gain remains high. The offset voltages as low as 44 mV have been obtained. Very high current gains at very low collector current densities are obtained.
2-COLOR QUANTUM-WELL INFRARED PHOTODETECTOR WITH PEAK SENSITIVITIES AT 3.9 MU-M AND 8.1 MU-M
(1994-08-04)
TSAI, KL
;
LEE, CP
;
TSANG, JS
;
CHEN, HR
;
電子工程學系及電子研究所
A two-colour infra-red photodetector using multistacks of GaAs/AlGaAs quantum wells is demonstrated. The response peaks are at 3.9 and 8.1 mum. The peak responsivities of the detector are 0.4A/W and 35mA/W for 8.1mum and 3.9mum bands, respectively. The detectivities of the 3.9 and 8.1 mum bands are 7.5 x 10(9) and 1.5 x 10(10)cmHz1/2/W. These values are the best reported results for two-colour detectors with peak sensitivities in the spectral regions of 3-5 and 8-12mum.
EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES
(1995-02-01)
TSANG, JS
;
LEE, CP
;
FAN, JC
;
LEE, SH
;
TSAI, KL
Effects of thickness and position of the low-temperature-grown GaAs (LT-GaAs) layer on the compositional disordering of AlGaAs/GaAs superlattice have been studied. Samples with a top LT-GaAs layer or a bottom LT-GaAs layer have been studied with various annealing conditions. It was found that the LT-GaAs layer grown on top of the superlattice is more effective in causing disordering than the LT-GaAs layer grown at the bottom. The amount of disordering increases with the thickness of the LT-GaAs layer. A selective disordering process has been developed using a patterned LT-GaAs cap layer. This disordering technique is very simple and can be easily applied to device fabrication.
2-DIMENSIONAL BI-PERIODIC GRATING-COUPLED ONE-COLOR AND 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTORS
(1995-02-01)
TSAI, KL
;
LEE, CP
;
TSANG, JS
;
CHEN, HR
;
CHANG, KH
Multiple quantum well infrared photodetectors (QWIP's) with two-dimensional bi-periodic grating couplers have been demonstrated. For one-color QWIP's, the response linewidths of such QWIP's are found to be much wider than those of conventional grating coupled QWIP's. The bi-periodic gratings have also been applied to two color QWIP's to separately optimize the absorption at two wavelength bands. The large difference in responsivities at the two wavelength bands for devices with single period gratings can be greatly reduced with the use of bi-periodic gratings.
COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAAS
(1995-07-01)
TSANG, JS
;
LEE, CP
;
FAN, JC
;
TSAI, KL
;
CHEN, HR
The use of low-temperature (similar to 200 degrees C) grown GaAs by molecular beam epitaxy to induce compositional disordering of AlGaAs/GaAs superlattices has been studied. After furnace annealing between 700 and 850 degrees C for 30 min, an obvious blue shift in the peak wavelength of the superlattice emission is observed by the 77 K photoluminescence (PL), indicating that the emission has been changed from that of the GaAs quantum wells to that of the intermixed AlGaAs. The PL shift and the depth profile of Al concentration measured by secondary ion mass spectrometry indicate that the superlattice is nearly totally disordered after 850 degrees C annealing. (C) 1995 American Vacuum Society.

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