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Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO3 thin films
(1998-08-01)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
RF magnetron sputtered (Ba, Sr)TiO3 (BST) thin films were deposited on Pt/SiO substrate with various O-2/(O-2 + Ar) mixing ratios (OMR) ranging from 0 to 60%. Two possible conduction mechanisms of the BST thin films, the Poole-Frenkel (PF) transport (bulk limited conduction) and the Schottky emission (SE) (electrode limited conduction) were studied. Experimental results indicated that the BST films prepared at low OMR (0-25%) exhibit the SE mechanism dominated below the transition electric field of 490 kV/cm and the PF transport mechanism dominated beyond 490 kV/cm; and while those prepared at high OMR (40-60%) display the SE mechanism dominated both below and beyond the transition electric field. The difference in dominant mechanism (bulk and electrode limited conduction) between films was ascribed to concentration variation of the oxygen vacancy in the films.
Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
(1998-11-01)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 (BST) thin films deposited on various bottom electrodes, such as Pt, Ir, IrO2/Ir, Ru, RuO2/Ru before and after annealing in O-2 ambient was investigated. Through the measurement of dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the trapping dielectric relaxation and defect quantity of the films, and proposed an equivalent circuit on the basis of the capacitance, admittance and impedance spectra. A shallow trap level located at 0.005-0.01 eV below the conduction band was observed from the admittance spectral studies in the temperature range of 27-150 degrees C. The origin of dielectric relaxation and defect concentration was attributed to the existence of the grain boundary defect, interface defect and shallow trap level in the films. An equivalent circuit was established which can well explain the AC response and identify the contribution of defects on electrical properties of BST thin film. From the viewpoint of trapping phenomena and dielectric relaxation analyses, we propose Ir as the optimum material for bottom electrode to withstand the post-annealing treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors
(1999-02-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and leakage current density of Ba0.47Sr0.53TiO3 (BST) thin films deposited by radiofrequency magnetron sputtering on various bottom electrode materials (Pt, Ir, IrO2/Ir, Ru, RuO2/Ru) before and after annealing in O-2 and N-2 ambient were investigated. Improvement in crystallinity of BST films deposited on various bottom electrodes was observed with annealing. The refractive index, dielectric constant, loss tangent, and leakage current of the films were also strongly dependent on annealing conditions. A BST thin film deposited on an Ir bottom electrode at 500 degrees C, after 700 degrees C annealing in O-2 for 20 min, had a dielectric constant of 593 +/- 5%, a loss tangent of 0.019 +/- 10% at 100 kHz, a leakage current of (2.1 +/- 13%) x 10(-8) A/cm(2) at an electric field of 100 kV/cm with a delay time of 30 s, and a charge storage density of 53 +/- 5% fC/mu m(2) at an applied field of 150 kV/cm. Based on the dielectric constant, leakage current, and reliability, the optimum material for the bottom electrode with annealing was Ir, Interdiffusion of Ru and Ti at the interface between the BST film and Ru electrode was observed in 500 degrees-700 degrees C annealed samples. The 10 year lifetime of time-dependent dielectric breakdown (TDDB) studies indicated that BST on Pt, Ir, IrO2/Ir, Ru, and RuO2/Ru had long lifetime over 10 years of operation at a voltage bias of 1 V.
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
(1999-09-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and the leakage current density of (Ba, Sr)TiO3 (BST) thin films deposited on various bottom electrode materials (Pt, Ir. IrO2/Ir, Ru, RuO2/Ru) before and after annealing in O-2 ambient were investigated. The improvement of crystallinity of BST films deposited on various bottom electrodes was observed after the postannealing process, The dielectric constant and leakage current of the films were also strongly dependent on the postannealing conditions. BST thin film deposited on Ir bottom electrode at 500 degrees C, after 700 degrees C annealing in O-2 for 20 min, has the dielectric constant of 593, a loss tangent of 0.019 at 100 kHz, a leakage current density of 1.9 x 10(-8) A/cm(2) at an electric field of 200 kV/cm with a delay time of 30 s, and a charge storage density of 53 fC/mu m(2) at an applied field of 100 kV/cm, The BST films deposited on Ir with post-annealing can obtain better dielectric properties than on other bottom electrodes in our experiments, And Ru electrode is unstable because the interdiffusion of Ru and Ti occurs at the interface between the BST and Ru after postannealing. The ten-year lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir, IrO2/Ir, Ru, and RuO2/Ru have long lifetimes over ten years on operation at the voltage bias of 2 V.
Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors
(1999-09-07)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The ionic and electronic conductivity characteristics and defects in the Ba0.47Sr0.53TiO3 (BST) thin films that were rf-sputtered at 450 degrees C on a Pt bottom electrode at various O-2/(Ar + O-2) mixing ratios (OMR) were studied. The dielectric properties specific to the BST films can be explained by considering the influence of the dielectric relaxation phenomenon. Through the measurement of the dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the dielectric relaxation and obtained the defect quantity of the films, on the basis of the capacitance, admittance and impedance spectra. The defect density of BST films decreases with an increase of OMR. The majority of electrical conductivity is carried by electrons (electronic conductivity) and not the ionic defects (ionic conductivity).
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
(1999-10-15)
Hu, TC
;
Chiu, SY
;
Dai, BT
;
Tsai, MS
;
Tung, IC
A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
The novel precleaning treatment for selective tungsten chemical vapor deposition
(1999-11-01)
Chang, TC
;
Mor, YS
;
Liu, PT
;
Sze, SM
;
Yang, YL
The new solutions, hydroxylamine sulfate [(NH2OH)(2)H2SO4] combined with CuSO4, for cleaning Al via were investigated. Tt is found that the cleaning capability of hydroxylamine sulfate combined with CuSO4 is better than that of hydroxylamine sulfate. Low via resistance of electrical test structure is obtained if the via is cleaned by this new cleaning solution. The hydroxylamine sulfate can efficiently remove Al3O2 and leave the clean Al on the surface of via. Then, the Cu ion in this new solution will immediately react with clean Al and form a copper passivating layer on the surface of via. The copper is more stable than aluminum in the environment and hard to be oxidized. Therefore, hydroxylamine sulfate combined with CuSO4 can provide excellent cleaning capability for aluminum via holes. Also, the clean surface on the bottom of via is helpful for tungsten nucleation in via during CVD-W deposition. Therefore, a low via resistance and good selectivity of tungsten plug are obtained when the Al via is precleaned with this new solution. (C) 1999 Elsevier Science S.A. All rights reserved.
Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films
(2000-03-01)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The influence of bottom electrodes (Pt, Ir, Ru) on the degradation of (Ba,Sr)TiO3 (BST) thin films under dc stress conditions was investigated. The current-time (I-t) end current-voltage (I-V) measurement results indicated that the BST thin films deposited on Ru have faster degradation than those deposited on Pt and Ir. The degradation was considered to be caused by the deterioration of Schottky-barrier. Under de stress conditions, the dielectric relaxation current in the BST dielectric films probably enhances the deterioration. The breakdown time was found to be approximated by an exponential function of an electric field [t(B) = alpha exp(-beta E)] for dc stress. The value of the exponential factor beta for BST deposited on Pt and Ir was about a quarter of that for BST deposited on Ru. The different value of beta observed under de stress indicates that the degradation of BST on Ru would be more serious than on Pt and Ir. The ten Sears lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir and Ru have longer lifetime over ten years on operation at the voltage bias of 1 V.
Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon
(2000-05-01)
Yang, WL
;
Cheng, CY
;
Tsai, MS
;
Liu, DG
;
Shieh, MS
;This letter reports on the chemical-mechanical polishing (CMP) of boron doped polysilicon and silicon. Successive polishing was carried out to investigate how the removal rate correlates to the boron concentration as a function of depth in the polysilicon and crystalline silicon. It is found that the removal of baron-doped samples is significantly retarded and strongly correlated with the doping concentration. To the author's knowledge, this work is the first report discussing the retardation effect of boron in the Si-CMP process, This effect is attributed to the activated dopant atoms which are conjectured to inhibit the hydrolysis reaction of Si-Si bonding in the alkaline aqueous solution. In our study, the retardation effect is evident for the boron concentration higher than 5 x 10(18) cm(-3). As a consequence, it may become an issue in CMP process for those layers of selected or complemented doping.
Dielectric relaxation and defect analysis of Ta2O5 thin films
(2000-05-21)
Ezhilvalavan, S
;
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The presence of defects in thin-film dielectrics often leads to dielectric relaxation as a function of frequency, in which the dielectric constant decreases and the loss tangent increases with increasing frequency. Dielectric relaxation results in charge storage capacity reduction under dynamic random access memory operating conditions. In this work, the dielectric relaxation behaviour of de reactive sputtered Ta2O5 thin film was investigated. Using dielectric dispersion measurements as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we determined the dielectric relaxation and defect quantity of the films and propose an equivalent circuit on the basis of complex capacitance, admittance and impedance spectral studies.

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