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A numerical study of multi filament formation in metal-ion based CBRAM
(2016-02-01)
Berco, Dan
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Tseng, Tseung-Yuen
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
This study investigates the underlying mechanisms of multiple conductive filaments (CF) creation in metal-ion based conductive bridge RRAM (CBRAM) by using the Metropolis Monte Carlo algorithm and suggests a possible explanation for this phenomenon. The simulation method is demonstrated over a Cu/HfO2 structure, starting from a random initial distribution of oxygen vacancies (OV) defects in the resistive switching layer, to a formed CF and ending in a ruptured state. the results indicate that "Hot Spots" (HS), where agglomeration of OV trap like states for electron hopping based conduction induce local heating, create favorable energy conditions to attract diffused metal species originating from the top electrode. While HS may be created and annihilated by random OV generation and recombination processes, the precipitated metal forms a stem out of which a CF could evolve. The CF stem's final growth stage is mainly driven by drift and diffusion. This process may lead to the formation of one or more CFs as a function of the forming bias voltage. This bias dependence is demonstrated over a large range, where the creation of a single, double and multiple CFs are shown. In addition, the reset process of the multi CF device is presented, and the experimentally observed, step like, gradual CBRAM reset is verified. The simulated results are in good agreement with experimental data and promote the idea that OV defect engineering may be used to improve CBRAM performance. (C) 2016 Author(s).
Lithography-free thin-titanium-nanocone metamaterial perfect absorbers using ZnO nanostructures
(2017-10-01)
Lin, Albert
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Parashar, Parag
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Yang, Chih-Chieh
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Jian, Ding Rung
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Huang, Wei-Ming
In this work, thin Ti nanocones are deposited on top of the arrays of ZnO nanopagodas, and the whole structure works as an efficient nanostructured metamaterial perfect absorber (MPA) without using lithography and dry etching. In this design, similar to 1 mu m long ZnO nanopagoda arrays are grown on a 100 nm ZnO buffer layer over the silicon/glass substrate by a treatment with an aqueous solution of L-ascorbic acid. Growth direction and the degree of lamination in the ZnO nanostructures can be easily controlled by adjusting the concentration of L-ascorbic acid. Afterward, these ZnO nanopagodas are coated with a 30nm thin top and a 500nm thick bottom layer of Ti to achieve the proposed nanocone resonant cavity structure with electromagnetic wave field penetration. The overall structure encapsulates three physical concepts, namely, field penetration, adiabatic coupling and cavity resonance, which contribute the broadband perfect absorption. The entire process is carried out at a low temperature (< 90 degrees). We believe the proposed tapered Ti nanocones MPA structure facilitates ultra-broadband perfect spectral absorption with promising nature of low-cost, large-area, and lithography-free. (C) 2017 Optical Society of America
Overview of emerging nonvolatile memory technologies
(2014-09-25)
Meena, Jagan Singh
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Sze, Simon Min
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Chand, Umesh
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Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
(2016-08-19)
Simanjuntak, Firman Mangasa
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Panda, Debashis
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Wei, Kung-Hwa
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Tseng, Tseung-Yuen
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材料科學與工程學系
In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.
Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
(2016-09-01)
Aluguri, Rakesh
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Tseng, Tseung-Yuen
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交大名義發表
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National Chiao Tung University
Cross point RRAM arrays is the emerging area for future memory devices due to their high density, excellent scalability. Sneak path problem is the main disadvantage of cross point structures which needed to be overcome to produce real devices. Various self-rectifying cells like complementary resistive cell, hybrid RRAM cell, valence modulated conductive oxide RRAM and non-linear resistive memory with tunneling barrier, etc., are proposed to overcome the sneak path problem and to achieve the high density with good on/off ratio. However, it is challenging to fabricate the self-rectifying cells operating at low program/erase voltages with high non-linearity for both read and write operations and exhibiting good retention and endurance characteristics at the same time for a single device. 1S1R devices are more attractive than SRC due to large optimization possibilities to obtain better device performance as they have separate selector cell and memory cell which decouples the control parameters. Various kinds of selector devices like Si-based selector, metal-oxide based selector, threshold switch selector, mixed ionic-electronic conduction selector etc., are under intense research to obtain the best performance cross point memory devices. In this paper, we have briefly discussed about recent progress on various self-rectifying cells and selector devices for obtaining 3-D stackable cross point memory arrays.
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
(2014-10-06)
Tsai, Jyun-Yu
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Chang, Ting-Chang
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Chen, Ching-En
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Ho, Szu-Han
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Liu, Kuan-Ju
This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks. (C) 2014 AIP Publishing LLC.
Perovskite Oxides as Resistive Switching Memories: A Review
(2014-10-26)
Panda, Debashis
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Tseng, Tseung-Yuen
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Numerous metal-insulator-metal systems demonstrate electrically induced resistive switching effects and have therefore been proposed as the basis for future nonvolatile memories. They combine the advantages of flash memories and dynamic random access memories while avoiding their drawbacks, such as operation speed, power consumption and device integration and scalable issues. The RRAM devices primarily operate at different resistance values to store the digital data and can keep the resistance state without any power supply. Recent advances in the understanding of the resistive switching mechanism are explained by a thermal or electrochemical redox reaction near the interface between the oxide and the top active metal electrode. Here we review the ongoing research and development activities on the perovskite based resistive switching memory devices. The possible switching mechanisms for the resistive switching are described. The effects of crystal structure, dopants, doping concentrations, annealing temperature, device structures and thickness of the active oxide layer on the resistive switching characteristics and consequently the memory performances are also discussed. From this insight, we take a brief look into different effect on the switching of the perovskite material systems.
Gate controlled field emission triode and process for fabricating the same
(2007-12-13)
Tseng, Tseung-Yuen
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Lee, Chia-Ying
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Li, Seu-Yi
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Lin, Pang
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
Gate controlled field emission triode and process for fabricating the same
(2009-08-13)
Tseng, Tseung-Yuan
;
Lee, Chia-Ying
;
Li, Seu-Yi
;
Lin, Pang
;
Tseng, Tseung-Yuen
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
Size-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistance
(2010-10-01)
Lai, Chun-Hung
;
Chang, Chia-Wei
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The field-emission electrical properties of hydrothermally synthesized zinc-oxide nanowires grown on SiO(2)-Si substrate are reported. Vertically aligned single-crystalline emitters with distinct length L and diameter D are realized by controlling the assisted growth of porous anodic aluminum oxide (AAO) templates. Field-emission measurement revealed that these field emitters exhibited controllable turn-on field E(to) and the field enhancement factor beta. Sample with feature size of L = 500 nm and D = 80 nm was prepared and then used as a basis for examining the size effect. Lower E(to) and higher beta were observed consistently for increasing the aspect ratio LID. The enhanced properties of E(to) = 1.48 V/mu m and beta up to 6100 are achieved for L/D = 53 (L = 1600 nm and D = 30 nm). Optimal characterizing parameters of E(to) and beta will be reached while pursuing extreme L/D practically. Factors such as the geometric limit of AAO template manufacture and the filling efficiency of ZnO into AAO pores will exert influence on the size-dependent effect. (C) 2010 Elsevier B.V. All rights reserved.

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