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🏛️國立陽明交通大學機構典藏

Access type: Open accessAuthor: search.filters.author.Wang, SC

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Now showing 1 - 10 of 130
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    Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
    (2005-01-01)
    Kuo, HC
    ;
    Chang, YA
    ;
    Chang, YH
    ;
    Chu, JT
    ;
    Tsai, MY
    1.27 mu m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature raised from room temperature to 70 degrees C. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degrees C to 70 degrees C.
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    Broad-band (>= 20 GHz) laser-diode-based optoelectronic microwave phase shifter
    (1998-10-01)
    Lin, GR
    ;
    Hwang, TS
    ;
    Chuang, YH
    ;
    Wang, SC
    ;
    Pan, CL
    We demonstrate a new type of broad-band microwave phase shifter with superior performance at frequencies up to 20 GHz. This is implemented by simply adding an offset voltage prior to the loop filter (LF) in a laser-diode-based digital optoelectronic phase-locked loop (OEPLL), Accurate control of the phase of microwave signals with a continuously tunable range exceeding 640 degrees (similar to 3.6 pi) is achieved. The phase fluctuation and long-term drift of ally desired phase shift are as small as +/-0.4 degrees and 0.08 degrees, respectively, at 20 GHz, The relative phase instability can be maintained within 0.09 degrees while operating in a phase-shift-keying (PSK) scheme, We also demonstrate accurate control of relative phase difference between dual phase-locked microwave sources using the phase shifter. Our results indicate potential application of this broad-band optoelectronic phase shifter in a phased-array antenna system.
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    A simple passive-alignment packaging technique for laser diode modules
    (1998-10-01)
    Wang, SC
    ;
    Chi, S
    ;
    Cheng, WH
    ;
    光電工程學系
    ;
    Department of Photonics
    A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
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    Tunable semiconductor laser with liquid crystal pixel mirror in grating-loaded external cavity
    (1999-08-19)
    Pan, CL
    ;
    Tsai, SH
    ;
    Pan, RP
    ;
    Sheu, CR
    ;
    Wang, SC
    The wavelength of a commercial red pointer laser diode has been tuned over 4nm digitally in 0.2nm steps with a folded telescopic gating loaded external cavity incorporating a liquid crystal pixel mirror. The sidemode-suppression ratio of the laser was better than 20dB throughout this range.
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    Frequency tracking and stabilization of a tunable dual-wavelength external-cavity diode laser
    (1999-09-01)
    Hsu, L
    ;
    Chi, LC
    ;
    Wang, SC
    ;
    Pan, CL
    ;
    電子物理學系
    We show a unique dual-wavelength external-cavity laser diode with frequency tracking capability and obtain a stable beat frequency between the dual-wavelength output. By using a Fabry-Perot interferometer as the frequency discriminator and the time-gating technique in a servo loop, the peak-to-peak frequency fluctuations were stabilized, with respect to the Fabry-Perot cavity, to 86 kHz in the dual-wavelength output at 802.5 and 804.5 nm, and to 17 kHz in their 0.9 THz beat signal. Similar performance was achieved for tuning of the dual wavelength separation ranging from 0.2 to 4 nm. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
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    Efficient high-power diode-end-pumped TEM00 Nd : YVO4 laser
    (1999-10-01)
    Chen, YF
    ;
    Huang, TM
    ;
    Liao, CC
    ;
    Lan, YP
    ;
    Wang, SC
    We demonstrate a compact and efficient diode-end-pumped TEM00 laser with output power of 25.2 W for 52 W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 21-W of average power at a pulse repetition rate of 100 kHz and similar to 1.1-mJ pulse energy at a pulse repetition rate of 10 kHz were produced, At 10 kHz, the pulse width is around 10 ns and the peak power is higher than 100 kW.
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    Determination of the Auger upconversion rate in fiber-coupled diode end-pumped Nd : YAG and Nd : YVO4 crystals
    (2000-04-01)
    Chen, YF
    ;
    Liao, CC
    ;
    Lan, YP
    ;
    Wang, SC
    ;
    電子物理學系
    An analytical model is developed to study the influence of the Auger upconversion process on the thermal loading under lasing and nonlasing conditions. With the developed model, Auger upconversion rates can be determined by comparing theoretical calculations with experimental results for the ratio of the thermal loading under lasing and nonlasing conditions. The upconversion rates obtained with the present method are compared with the results measured from the fluorescence decay experiment.
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    Influence of energy-transfer upconversion on the performance of high-power diode-end-pumped CW lasers
    (2000-05-01)
    Chen, YF
    ;
    Lan, YP
    ;
    Wang, SC
    ;
    電子物理學系
    ;
    光電工程學系
    The influence of energy-transfer upconversion (ETU) on the performance of diode-end-pumped lasers is studied by including ETU effects into the space-dependent rate equations. The dependence of ETU rates on the mode-to-pump size ratio and on the output mirror transmission is derived. Experiments for Nd:YAG and Nd:YVO4 crystals are performed to validate the present model. It is found that the ETU process increases the sensitivity of the output power to the output mirror transmission but its influence on the output power is not significant for low output transmission.
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    Repetition-rate dependence of thermal loading in diode-end-pumped Q-switched lasers: influence of energy-transfer upconversion
    (2000-07-01)
    Lan, YP
    ;
    Chen, YF
    ;
    Wang, SC
    ;
    電子物理學系
    ;
    光電工程學系
    The fractional thermal loading in diode-end-pumped Q-switched lasers was estimated from the theory of cavity stability. The experimental results show that the thermal loading depends on the pulse-repetition rate. This dependence is attributed to the effect of energy-transfer upconversion (ETU). A theoretical model including the ETU effect was developed to analyze the fractional thermal loading in end-pumped Q-switched lasers. The theoretical predictions were found to be in good agreement with the experimental data.
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    Efficient high-power diode-end-pumped TEM00 Nd : YVO4 laser with a planar cavity
    (2000-07-15)
    Chen, YF
    ;
    Lan, YP
    ;
    Wang, SC
    ;
    電子物理學系
    ;
    光電工程學系
    We demonstrate a compact and efficient diode-end-pumped TEMinfinity laser with output power of 30 W for 48 W of incident pump power by use of two coated Nd:YVO4 crystals to form a thermally stabilized flat-flat cavity. In Q-switched operation 25 W of average power at a pulse-repetition rate of 100 kHz and similar to 0.9-mJ pulse energy at a pulse-repetition rate of 10 kHz were produced. (C) 2000 Optical Society of America OCIS codes: 140.3480, 140.3540.