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Now showing 1 - 10 of 21

Oxygen sensors made by monolayer graphene
(2012-01-01)
Hung, S. C.
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Chen, C. W.
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Yang, M. D.
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Yeh, C. W.
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Wu, C. H.
The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O-2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cmx1cm will attach O-2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O-2 concentration and the detection limit of the simple O-2 sensor was 1.25% in volume ratio.
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells
(2013-01-14)
Shu, G. W.
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Lin, J. Y.
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Jian, H. T.
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Shen, J. L.
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Wang, S. C.
Spatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of America
Enhancement of light emission in GaAs epilayers with graphene quantum dots
(2015-01-01)
Lin, T. N.
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Chih, K. H.
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Cheng, M. C.
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Yuan, C. T.
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Hsu, C. L.
A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml(-1). On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.
Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate
(2011)
Huang, C. C.
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Chang, S. J.
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Kuo, C. H.
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Wu, C. H.
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Ko, C. H.
The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO(2) recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95% using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3569753] All rights reserved.
Supplier Selection Critical Decision Values for Processes with Multiple Independent Lines
(2013-10-01)
Pearn, W. L.
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Wu, C. H.
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工業工程與管理學系
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Department of Industrial Engineering and Management
The process yield is the most common criterion considered for decision making in supplier selection problem. For normally distributed processes with multiple independent lines, the SpkM index provides an exact measurement for the overall yield. Therefore, the SpkM index can be implemented to deal with the supplier selection problem with processes having multiple independent lines. In this article, a test statistic obtained by a division method is employed to establish a hypothesis testing procedure, with two phases, which is developed to determine whether two suppliers are equally capable or not. The sampling distribution and the probability density function of the test statistic are derived. For various minimum requirements of process capability, number of lines, sample sizes, magnitudes of the difference between the two suppliers and the type I error, the critical values for decision making are presented. The required sample sizes for various designated powers at given type I error are tabulated. A thin-film transistor type liquid-crystal display application example is provided to demonstrate the testing procedure. Copyright (c) 2012 John Wiley & Sons, Ltd.
A Close Form Solution for the Product Acceptance Determination Based on the Popular Index C-pk
(2013-07-01)
Pearn, W. L.
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Wu, C. H.
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工業工程與管理學系
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Department of Industrial Engineering and Management
Product acceptance determinations are practical tools for quality control applications involving quality contract on product orders between the vendor and the buyer. It provides the vendor and the buyer rules for product acceptance to meet the preset product quality requirement. As the rapid advancement of manufacturing technology, more than one quality characteristic must be simultaneously considered to improve the product quality because of the product design. In this article, we introduce an efficient product acceptance procedure on the basis of the generalization C-pk(T) index, to deal with lot sentencing problem with very low fraction of defectives. We tabulate the required sample size n and the corresponding critical acceptance value c(0) for various alpha-risk, beta-risk, and the levels of the lot fraction of defectives that correspond to acceptance and rejecting quality levels. Practitioners can use the proposed method to make reliable decisions in product acceptance. Copyright (C) 2012 John Wiley & Sons, Ltd.
Measuring PPM Non-conformities for Processes with Asymmetric Tolerances
(2013-04-01)
Pearn, W. L.
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Wu, C. H.
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工業工程與管理學系
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Department of Industrial Engineering and Management
Process yield has been the most basic and common criterion used in the manufacturing industry for evaluating process capability. The Cpk index has been used widely in the manufacturing industry. In this note, we considered a generalization of Cpk index which handles processes involving a target T with asymmetric tolerances. Particularly, we established a formula for measuring the PPM non-conformities for given ratios of the two-side tolerances. We proved the validity of the established formula and tabulated the upper bounds on PPM non-conformities for various given Cpk index values and ratios of the two-side tolerances. Copyright (c) 2012 John Wiley & Sons, Ltd.
A Note on "Capability Assessment for Processes with Multiple Characteristics: A Generalization of the Popular Index Cpk"
(2013-03-01)
Pearn, W. L.
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Wu, C. H.
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Tsai, M. C.
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工業工程與管理學系
;
Department of Industrial Engineering and Management
The generalized yield index C-pk(T) establishes the relationship between the manufacturing specifications and the actual process performance, which provides a lower bound on process yield for two-sided processes with multiple characteristics. The results attended are very practical for industrial application. In this article, we extended the results in cases with one-sided specification and multiple characteristics. The generalized index C-PU(T) was considered, and the asymptotic distribution of the natural estimator (C)over-cap(PU)(T) was developed. Then, we derived the lower confidence bounds as well as the critical values of index C-PU(T). We not only provided some tables but also presented an application example. Copyright (c) 2012 John Wiley & Sons, Ltd.
An Extension of the Product Acceptance Determination for One-Sided Process with Multiple Characteristics
(2013-03-01)
Pearn, W. L.
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Wu, C. H.
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Hung, H. N.
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Kao, C. M.
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統計學研究所
In statistical quality control, product acceptance determination is an important problem for producer and consumer. In practical, particularly more than one quality characteristic must be simultaneously considered to improve the product quality because of the product design. In this article, we investigate the lot sentencing problem for normally distributed process with one-sided specification and multiple characteristics. We not only provide a simple procedure to help practitioners make reliable decision easily but also tabulate the required sample size and the corresponding critical acceptance value for various producer's and consumer's risks with the capability requirements AQL (acceptable quality level) and LTPD (lot tolerance percent defective). Copyright (c) 2012 John Wiley & Sons, Ltd.
Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
(2011-12-01)
Chen, C. W.
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Hung, S. C.
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Lee, C. H.
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Tun, C. J.
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Kuo, C. H.
Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America

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