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Item type:Item, The molecular mechanism of actinomycin D in preventing neointimal formation in rat carotid arteries after balloon injury(2005-05-01) ;Wu, CH ;Pan, JS ;Chang, WC ;Hung, JSMao, SJTThe pathological mechanism of restenosis is primarily attributed to excessive proliferation of vascular smooth muscle cells (SMC). Actinomycin D has been regarded as a potential candidate to prevent balloon injury-induced neointimal formation. To explore its molecular mechanism in regulating cell proliferation, we first showed that actinomycin D markedly reduced the SMC proliferation via the inhibition of BrdU incorporation at 80 nM. This was further supported by the G1-phase arrest using a flowcytometric analysis. Actinomycin D was extremely potent with an inhibitory concentration IC50 at 0.4 nM, whereas the lethal dose LD50 was at 260 mu M. In an in vivo study, the pluronic gel containing 80 nM and 80 lMactinomycin D was applied topically to surround the rat carotid adventitia; the thickness of neointima was substantially reduced (45 and 55%, respectively). The protein expression levels of proliferating cell nuclear antigen ( PCNA), focal adhesion kinase (FAK), and Raf were all suppressed by actinomycin D. Extracellular signal-regulated kinases (Erk) involved in cell-cycle arrest were found to increase by actinomycin D. These observations provide a detailed mechanism of actinomycin D in preventing cell proliferation thus as a potential intervention for restenosis.Item type:Item, Special section on multimedia and communication(1998-02-01) ;Wu, CH ;Yuang, MC ;Irwin, JD ;交大名義發表National Chiao Tung UniversityItem type:Item, Multilevel recording in erasable phase-change media by light intensity modulation(2001-03-01) ;Shieh, HPD ;Chen, YL ;Wu, CH ;光電工程學系Department of PhotonicsMultilevel recording has an advantage of increasing the recording density without extensively altering the current optical configuration. Four-level recording schemes in phase-change disks using either two or three recording layers were demonstrated. By modulating the intensity of the laser pulse, marks were recorded in any of the recording layers, forming four recording regions. Utilizing the large difference in refractive indices between the amorphous and crystalline states, each recording region corresponds to a different reflectance. For the four-level recording disk, if each recording region represents two-bit data, then the recording density of the four-level disk can be higher by a factor of two than that of a conventional disk recorded by pulse position modulation (PPM).Item type:Item, The preventive effects of G115 on balloon injury-induced neointima formation in rats(2001-12-28) ;Wu, CH ;Tsai, BR ;Hsieh, WT ;Chang, GYMao, SJTAfter percutaneous transluminal coronary angioplasty (PTCA), 30-50% of the patients may present with restenosis within 6 months. The aim of this study was to search for a preventive remedy against the balloon injury-induced neointima formation. Ginseng, with its wide indications on immune and cardiovascular functions, has prompted us to explore its role in neointima formation. In the present study, we aimed to explore if a standardized Panax Ginseng extract G115 was able to inhibit neointimal formation. With BrdU luminencence assay, maximal proliferation of rat smooth muscle cells was reduced to 24% of control values by G115. Norepinephrine-induced vasocontraction was antagonized in 21% and 44% by 1.44mg/ml and 2.88mg/ml of G115, respectively. Neointima-to-lumen area ratio of balloon-injured rat carotid arteries was reduced 77.3% by G115 as compared to the sham control. These results demonstrate the preventive effects of ginsenosides on angioplasty-mediated neointima formation. (C) 2001 Elsevier Science Inc. All rights reserved.Item type:Item, Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching(2002-11-01) ;Sheu, JT ;You, KS ;Wu, CH ;Chang, KM電子工程學系及電子研究所We propose a promising fabrication technology for single-electron transistors based on a silicon-on-insulator (SOI) nanowire fabricated by scanning probe lithography and KOH wet etching. The 10-nm-wide and 10-nm-high silicon nanowire is defined by scanning probe lithography and KOH wet etching process technology. Along the [100] direction on a (100) SOI silicon wafer, local oxidation was performed in ambient using highly doped Si cantilevers with a resistivity of 0.01-0.0025 Omega cm and a commercial atomic force microscope/scanning tunneling microscope instrument. Using the oxide pattern as a Si etching mask, the Si substrate was dipped in aqueous KOH solution, in which unoxidized regions are selectively etched by aqueous KOH orientation-dependent etching. The silicon nanowire was obtained by well-controlled overetching of 34 wt % at 40 degreesC for 50 s. The top gate, back gates and contact pads were defined by photolithography and dry etching. Statistics showing the reproducibility of this technique are also demonstrated. (C) 2002 American Vacuum Society.Item type:Item, System integration of WAP and SMS for home network system(2003-07-15) ;Wu, CH ;Jan, RH ;資訊工程學系Department of Computer ScienceThis paper proposes a Home Network System (HNS) architecture integrated with Wireless Application Protocol and Short Message Service to support the connectivity between home and Internet/Global System for Mobile Communication (GSM) networks. The HNS architecture includes an HNS gateway and three home network subsystems, i.e., home appliance, security and messaging subsystems. The main objective of the integrated system is to remotely monitor and control the devices in the HNS via laptop computer or a GSM mobile terminal. In addition to responding to remote queries, the managed devices (e.g., home appliances or burglar alarm system) can actively send alerting messages to a mobile terminal when an abnormal state occurs. Through the HNS gateway, the monitoring and control information is diffused to the Internet/GSM network. An implementation of the HNS system is described in this paper as an illustration of the feasibility of the proposed architecture. (C) 2003 Elsevier Science B.V. All rights reserved.Item type:Item, Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs(2003-12-01) ;Yu, DS ;Wu, CH ;Huang, CH ;Chin, AChen, WJWe have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi1-xGex. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.Item type:Item, Thermal properties, interactions, morphologies, and conductivity behavior in blends of poly(vinylpyridine)s and zinc perchlorate(2004-01-13) ;Kuo, SW ;Wu, CH ;Chang, FC ;應用化學系Department of Applied ChemistryWe have investigated the physical properties and specific interaction of two regioisomeric poly(vinylpyridine)s-poly(2-vinylpyridine) (P2VP) and poly(4-vinylpyridine) (P4VP)-blended with zinc perchlorate. Analyses by differential scanning calorimetry indicate that the values of T-g of the poly(vinylpyridine)s increase significantly upon blending with zinc perchlorate. The values of Tg of P2VP and P4VP increase by 119 and 154 degreesC, respectively, relative to their corresponding pure polymers, upon blending with 40 and 30 wt %, respectively, zinc perchlorate. On the basis of the extended configuration entropy model equation, the interaction strength of the zinc salt/P4VP blend (3.60) is greater than that of the zinc salt/P2VP blend (3.55). The interaction between the polymer and the zinc ion was confirmed by infrared, X-ray photoelectron, and solid-state NMR spectroscopies, which suggest that the zinc cation coordinates to pyridine units in a metal-ligand bonding mode. In addition, the strength of the interaction between the polymer and the zinc ion is influenced by the different steric demands of the two polymer structures. A good correlation is found in the morphology of these polymer/zinc salt blends as determined by wide-angle X-ray diffraction and solid-state NMR T-1rho(H) measurements.Item type:Item, Poly(phenyl acrylate) and Poly(p-methylphenyl acrylate) as photo-stabilizers II. Protection of PET against photo-oxidation(2004-03-01) ;Lee, CT ;Wu, CH ;Lin, MS ;應用化學系Department of Applied ChemistryPoly(phenyl acrylate) (PPA) and poly(p-methylphenyl acrylate) (PMPA) were used as inherent photo-stabilizers for PET. PPA/ PET and PMPA/PET in weight ratios of 0/100, 5/95, 10/90, 20/80 and 100/0 were blended. These blends were then cast into films and drawn into fibres and were irradiated with an accelerated weathering tester (QUV). Functional group changes in the films during irradation were monitored with FTIR and the absorbance changes for different samples were compared with one another. Tensile strength of fibres after 42 days of irradiation were tested. Experimental results revealed that when 5% of PPA or PMPA was incorporated into PET, good stabilization of the film and fibres were observed, with PMPA exhibiting more photo-stabilization capability and better retention of tensile strength after 42 days of accelerated aging. (C) 2003 Elsevier Ltd. All rights reserved.Item type:Item, Thermal and spectroscopic properties of zinc perchlorate/poly(vinylpyrrolidone) blends and a comparison with related hydrogen bonding systems(2004-09-03) ;Kuo, SW ;Huang, CF ;Wu, CH ;Chang, FC應用化學系We have investigated the thermal and spectroscopic properties of blends of poly(vinylpyrrolidone) (PVP) with zinc perchlorate. Analyses by differential scanning calorimetry indicates that blending with zinc perchlorate increases the values of T-g of PVP. We calculated the interaction strength of the zinc salt/PVP blends based on an extended configuration entropy model. The presence of ion-dipole interactions between PVP and the zinc salt was confirmed based on Fourier transform infrared (FTIR) and solid-state NMR spectroscopies, which suggest that the zinc cations coordinate with the carbonyl groups of PVP. The single value of T-1rho(H) measured by solid-state NMR spectroscopy observed for all the zinc salt/PVP blends is smaller than that of pure PVP, which is a finding that indicates that the domain size of this blend system decreases upon increasing the zinc salt content. Based on FTIR and solid-state NMR spectroscopic analyses, we conclude that the ion-dipole interactions in the zinc salt/PVP blend are stronger than the hydrogen bonds in systems such as the poly(vinyl phenol) (PVPh)/PVP blend and the PVPh-co-PVP copolymer. (C) 2004 Elsevier Ltd. All rights reserved.