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🏛️國立陽明交通大學機構典藏

Access type: Open accessAuthor: search.filters.author.Zhang, Rui

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Now showing 1 - 10 of 15
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    Highly anisotropic metasurface: a polarized beam splitter and hologram
    (2014-09-29)
    Zheng, Jun
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    Ye, Zhi-Cheng
    ;
    Sun, Nan-Ling
    ;
    Zhang, Rui
    ;
    Sheng, Zheng-Ming
    Two-dimensional metasurface structures have recently been proposed to reduce the challenges of fabrication of traditional plasmonic metamaterials. However, complex designs and sophisticated fabrication procedures are still required. Here, we present a unique one-dimensional (1-D) metasurface based on bilayered metallic nanowire gratings, which behaves as an ideal polarized beam splitter, producing strong negative reflection for transverse-magnetic (TM) light and efficient reflection for transverse-electric (TE) light. The large anisotropy resulting from this TE-metal-like/TM-dielectric-like feature can be explained by the dispersion curve based on the Bloch theory of periodic metal-insulator-metal waveguides. The results indicate that this photon manipulation mechanism is fundamentally different from those previously proposed for 2-D or 3-D metastructures. Based on this new material platform, a novel form of metasurface holography is proposed and demonstrated, in which an image can only be reconstructed by using a TM light beam. By reducing the metamaterial structures to 1-D, our metasurface beam splitter exhibits the qualities of cost-efficient fabrication, robust performance, and high tunability, in addition to its applicability over a wide range of working wavelengths and incident angles. This development paves a foundation for metasurface structure designs towards practical metamaterial applications.
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    Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
    (2014-06-01)
    Zhang, Rui
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    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Huang, Syuan-Yong
    In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
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    Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
    (2014-01-01)
    Chang, Kuan-Chang
    ;
    Chen, Jung-Hui
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Huang, Syuan-Yong
    We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
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    Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
    (2014-02-01)
    Chu, Tian-Jian
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Zhang, Rui
    In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.
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    Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
    (2013-12-11)
    Chang, Kuan-
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    Huang, Jen-wei
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chen, Kai-Huang
    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.
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    Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
    (2013-12-21)
    Zhang, Rui
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Chen, Kai-Huang
    In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices. (C) 2013 AIP Publishing LLC.
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    High performance of graphene oxide-doped silicon oxide-based resistance random access memory
    (2013-11-21)
    Zhang, Rui
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    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chen, Kai-Huang
    In this letter, a double active layer (Zr:SiO (x) /C:SiO (x) ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO (x) layer. Compared with single Zr:SiO (x) layer structure, Zr:SiO (x) /C:SiO (x) structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
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    Characteristics of hafnium oxide resistance random access memory with different setting compliance current
    (2013-10-14)
    Su, Yu-Ting
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Zhang, Rui
    In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC.
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    Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
    (2013-07-01)
    Syu, Yong-En
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
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    Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
    (2013-08-19)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Chen, Kai-Huang
    In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.