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Access type: Open accessSubject: search.filters.subject.AlGaInP

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Now showing 1 - 6 of 6
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    Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
    (2002-06-01)
    Sung, WJ
    ;
    Huang, KF
    ;
    Tseng, TY
    ;
    電子物理學系
    ;
    Department of Electrophysics
    The properties of deep electron trapping centers of Te-doped (AlxGa1-x)(0.5)In0.5P (x = 0.5) layers grown by metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165 +/- 0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)(0.5)In0.5P (,v = 0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)(0.5)In0.5P.
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    Effect of passivation layers on characteristics of AlGaInP ridge waveguide laser diodes
    (2014-07-01)
    Hung, Chih-Tsang
    ;
    Huang, Shen-Che
    ;
    Lu, Tien-Chang
    ;
    光電工程學系
    ;
    Department of Photonics
    We investigate the effect of passivation structure on the optical mode distribution and characteristics of the edge emitting ridge waveguide AlGaInP-GaInP visible laser diodes (LDs). For conventional designs of single-layer Si3N4 or SiO2 passivation, the variation of lateral near-field confinement and the horizontal far-field (FF) divergence can be determined via the modification of dielectric layer thickness. Thin passivation layer suffers from high absorption at the metal interface while thick passivation layer suffers from poor heat dissipation in the ridge waveguide and high scattering loss, resulting in high threshold. We propose a novel design of three-pair Al2O3/Ta2O5 multilayer optical thin films as passivation on the ridge waveguide, which can improve the laser characteristics and the heat dissipation. The measured room-temperature threshold current (Ith) and characteristic temperature (T-0) are 44.5 mA and 104.2 K with a divergence angle of 16.4. (C) 2013 Elsevier Ltd. All rights reserved.
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    Optical Mode Modulation of AlGaInP Multi Quantum Well Laser Diodes
    (2013)
    Hung, Chih-Tsang
    ;
    Huang, Shen-Che
    ;
    Lu, Tien-Chang
    ;
    光電工程學系
    ;
    Department of Photonics
    We investigate the influence of passivation structure on the optical mode distribution and LI characteristics for the edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si3N4 or SiO2 passivation designs, the modification of dielectric layer thickness can determinate the lateral near-field confinement and change the horizontal far-field (FF) divergence. By increasing the film thickness, the non-radiation absorption come from Au-Ti can be improved and it leads to a narrow FF divergence beam. As continue to increasing the thickness, thicker passivation provides a better confinement factor and then the far-field pattern turn to be wider. For LI characteristics, it is necessary to deposit a thick enough passivation to reduce metal absorption. However, it cause much thermal energy accumulated in the ridge waveguide and deteriorate the quantum efficiency as adopting a too thick dielectric layer. Finally, we demonstrate a high power AlGaInP-GaInP multi quantum wells (MQWs) LD adopted a high-reflectivity passivation to enhance the LI characteristics and keep a suitable far-field divergence angle simultaneously. Under the design of three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive Al2O3/Ta2O5 multilayer. The measured room-temperature threshold current (I-th) and characteristic temperature (T-0) can be arrived 44.5mA and 104.2K at 16.4 degrees far-fielddivergence.
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    Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening
    (2005-11-01)
    Lee, YJ
    ;
    Kuo, HC
    ;
    Wang, SC
    ;
    Hsu, TC
    ;
    Hsieh, MH
    An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.
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    AlGaInP light-emitting diodes with stripe patterned omni-directional reflector
    (2006-02-01)
    Lee, YJ
    ;
    Lu, TC
    ;
    Kuo, HC
    ;
    Wang, SC
    ;
    Liou, MJ
    An n-side-up AlGaInP-based light-emitting diode (LED) with a stripe-patterned omni-directional reflector (ODR) was fabricated by adopting the adhesive-layer bonding scheme. Comparing to the conventional ODR LED, the stripe-patterned ODR LED significantly enhanced the output power with an only slight higher forward voltage. This improvement was analyzed by the scanning near-field optical microscope (SNOM) and could be attributable to the geometrical shape of stripe patterns that redirects the guided light towards to the escaping cone of the LED surface. The optimized dimension of stripe patterns was also calculated by simply modeling a LED dice with a stripe-patterned ODR structure, according to optical ray-tracing method.
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    Improved Performance of AlGaInP LEDs by a Periodic GaP-Dish Mirror Array
    (2009-10-01)
    Huang, Ping-Wei
    ;
    Wu, Yew Chung Sermon
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    A periodic GaP-dish mirror structure was introduced into AlGaInP light-emitting diodes (LEDs) through wet etching and Si wafer bonding process. It was found that the performance of these GaP-dish LEDs was better than that of conventional LED transferred to Si substrate (LED-C). In addition, the output power of GaP-dish LEDs was increased with the decrease of GaP-dish diameter. When the GaP-dish diameter decreased to 3 mu m, the output power reached 2.2 mW, which was two times higher than that of LED-C.