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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Access type: Open accessSubject: search.filters.subject.AlGaN/GaN

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Now showing 1 - 5 of 5
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    Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices
    (2012-01-01)
    Chiang, Che-Yang
    ;
    Hsu, Heng-Tung
    ;
    Chang, Edward Yi
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    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    This paper examines the effect of the field plate structure on the RF performance of AlGaN/GaN High Electron Mobility Transistor (HEMT) devices. While the field plate structure helps to increase the breakdown voltage of the device through modulating the electric field locally, it induces additional feedback capacitance from drain to gate. Such feedback capacitors may impact the overall RF performance of the device especially at high frequencies. Systematic investigations on the small signal as well as power performance as functions of the drain biases are presented. (C) 2011 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Garry Lee
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    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
    ;
    Hsu, Heng-Tung
    ;
    Chiang, Che-Yang
    ;
    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
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    Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
    (2012-08-01)
    Wong, Yuen-Yee
    ;
    Huang, Wei-Ching
    ;
    Trinh, Hai-Dang
    ;
    Yang, Tsung-Hsi
    ;
    Chang, Jet-Rung
    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.
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    Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
    (2009-03-01)
    Chang, Chia-Ta
    ;
    Hsiao, Shih-Kuang
    ;
    Chang, Edward Yi
    ;
    Lu, Chung-Yu
    ;
    Huang, Jui-Chien
    This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. is phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is, likely due to the additional donorlike surface states created through the piezoelectric effect.
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    30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
    (2010-02-01)
    Chang, Chia-Ta
    ;
    Hsu, Heng-Tung
    ;
    Chang, Edward Yi
    ;
    Kuo, Chien-I
    ;
    Huang, Jui-Chien
    We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Omega . mm and a low gate leakage current of 0.9 mu A/mm when biased at V(GS) = -3 V and V(DS) = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.