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Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor deposition
(2014-12-05)
Nguyen, H. Q.
;
Yu, H. W.
;
Luc, Q. H.
;
Tang, Y. Z.
;
Phan, V. T. H.
Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique\'s precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (similar to 10(6)cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (similar to 80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 mu m. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 x 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.
砷化銦鎵與砷化鎵量子點應變鬆弛的特性研究
(2001)
陳振芳
;
CHEN JENN-FANG
;
國立交通大學電子物理學系
有機金屬氣相磊晶法成長砷化銦鎵與砷化銦量子點特性研究
(2001)
李威儀
;
LEE WEI-I
;
國立交通大學電子物理學系
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
(2010-10-01)
Sahoo, Kartika Chandra
;
Kuo, Chien-I
;
Li, Yiming
;
Chang, Edward Yi
;
傳播研究所
In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
Improvement on the noise performance of InAs-based HEMTs with gate sinking technology
(2010-11-01)
Hsu, Heng-Tung
;
Kuo, Chien-I
;
Chang, Edward Y.
;
Kuo, Fang-Yao
;
材料科學與工程學系
Improvement on the RF and noise performance for 80 nm InAs/In(0.7)Ga(0.3)As high-electron mobility transistor (HEMT) through gate sinking technology is presented. After gate sinking at 250 degrees C for 3 min, the device exhibited a high transconductance of 1900 mS/mm at a drain bias of 0.5 V with 1066 mA/mm drain-source saturation current. A current-gain cutoff frequency (f(T)) of 113 GHz and a maximum oscillation frequency (f(max)) of 110 GHz were achieved at extremely low drain bias of 0.1 V. The 0.08 x 40 mu m(2) device with gate sinking demonstrated 0.82 dB minimum noise figure and 14 dB associated gain at 17 GHz with only 1.14 mW DC power consumption. Significant improvement in RF and noise performance was mainly attributed to the reduction of gate-to-channel distance together with the parasitic source resistance through gate sinking technology. (C) 2010 Elsevier B.V. All rights reserved.
Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates
(1999-01-01)
Tsai, FY
;
Lee, CP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We present a simple in situ method to fabricate high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates. The mechanism of the quantum dot formation is not strain relaxation but the growth characteristic of (111)B GaAs under low substrate temperatures. When the growth is performed at low temperatures, the layer-by-layer growth mode is replaced by island growth and therefore quantum dots are formed. The formation of the quantum dots was verified by atomic force microscope (AFM) images and the shift of photoluminescence (PL). The PL emission from the quantum dots was very strong and the full-width at half-maximum (FWHM) of the emission peak was as small as 7.7 meV, indicating excellent quality and very uniform dot formation. The effect of nominal thickness on the quantum dot formation has been investigated.
Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
(2013-10-01)
Lin, Yueh Chin
;
Trinh, Hai Dang
;
Chuang, Ting Wei
;
Iwai, Hiroshi
;
Kakushima, Kuniyuki
In this letter, a high-k composite oxide composed of La2O3 and HfO2 is investigated for n-In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3 (0.8 nm)/HfO2(0.8 nm) on InGaAs with post deposition annealing at 500 degrees C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D-it) of 7.0 x 10(11) cm(-2)eV(-1), small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.
Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
(2013-08-01)
Trinh, Hai-Dang
;
Lin, Yueh-Chin
;
Kuo, Chien-I
;
Chang, Edward Yi
;
Hong-Quan Nguyen
The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.
In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
(2013-01-01)
Nguyen, H. Q.
;
Trinh, H. D.
;
Chang, E. Y.
;
Lee, C. T.
;
Wang, Shin Yuan
We demonstrate the good-performance In0.5Ga0.5As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 10(6) cm(-2). The performance of the MOSCAPs is comparable to that of In0.53Ga0.47As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density D-it values of 5 x 10(11)-2 x 10(12) eV(-1) . cm(-2) in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.
Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer
(2005)
Lin, CK
;
Kuo, HC
;
Liao, YS
;
Lin, GR
;
光電工程學系
A novel top-illuminated metamorphic In(0.53)Ga(0.47)As p-i-n photodiodes (MM-PlNPD) grown on GaAs substrate by using a linearly graded In(x)Ga(1-x)P (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10(-11) W/Hz(1/2), and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.

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