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    Recombination lifetimes in InN films studied by time-resolved excitation-correlation spectroscopy
    (2009-11-01)
    Liu, Horng-Chang
    ;
    Hsu, Chia-He
    ;
    Chou, Wu-Ching
    ;
    Chen, Wei-Kuo
    ;
    Chang, Wen-Hao
    Recombination dynamics in degenerate InN were investigated by means of time-resolved excitation-correlation spectroscopy. The photoluminescence decay times are determined beyond the spectral response and temporal resolution limits of conventional photon-counting detectors. Spectral and temperature dependence of decay times reveal the effects of hole localizations on the recombination mechanisms. At low temperatures, the radiative lifetime tau(r) is insensitive to temperature and significantly longer than that predicted for the radiative band-to-band recombination, indicative of a transition dominated by the free-to-bound recombination without k conservation. Above a certain temperature determined by the electron concentration, we find tau(r)similar to T(3/2), as expected for the band-to-band transition when the k-selection rule holds. We determine a lower limit for the bimolecular recombination coefficient B in InN at 300 K as 5.6x10(-11) cm(3)/s.
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    有機金屬氣相磊晶法成長砷化銦鎵與砷化銦量子點特性研究
    (2001)
    李威儀
    ;
    LEE WEI-I
    ;
    國立交通大學電子物理學系
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    藍光半導體雷射立方體氮化鎵材料之製備與研究
    (1998)
    陳衛國
    ;
    WEI-KUOCHEN
    ;
    交通大學電子物理系
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    利用MOCVD製備高介電閘極材料之研究
    (2001)
    趙天生
    ;
    TIEN-SHENGCHAO
    ;
    國立交通大學電子物理學系
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    Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition
    (1998-10-01)
    Lai, WC
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    Chang, CY
    ;
    Yokoyama, M
    ;
    Guo, JD
    ;
    Tsang, JS
    GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of trimethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2 degrees. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD.
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    Beryllium-implanted P-type GaN with high carrier concentration
    (2001-05-01)
    Yu, CC
    ;
    Chu, CF
    ;
    Tsai, JY
    ;
    Lin, CF
    ;
    Lan, WH
    We report the results of beryllium implantation in Mg-doped GaN to obtain a high hole concentration and lower activation energy for Mg. The metal organic chemical vapor deposition (MOCVD)-grown Mg-doped GaN samples were implanted with Be ions at two different energies of 50 keV and 150 keV and a dose of 10(14) cm(-2). The implemented samples were subsequently annealed at 1100 degreesC for 60 s. The annealed samples showed an increase of hole concentration by three orders of magnitude from the non-implanted value of 5.5 x 10(16) to 8.1 x 10(19) cm(-3) as determined by Hall measurement. The activation energy of Mg dopants for the implanted annealed samples estimated from the temperature dependence of the photoluminescence data is about 170 meV, which is nearly 30% lower than that for the as-grown samples.
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    MOCVD growth of AlN/GaN DBR structures under various ambient conditions
    (2004-02-15)
    Yao, HH
    ;
    Lin, CF
    ;
    Kuo, HC
    ;
    Wang, SC
    ;
    光電工程學系
    The high-reflectivity AlN/GaN distributed Bragg reflector (DBR) structures were realized by metal organic chemical vapor deposition (MOCVD) growth under pure N-2 ambient for AlN epilayer growth. The highest peak reflectivity of about 94.5% with a stopband width of 18 nm at a center wavelength of 442 nm was obtained. For the DBR structure with AIN layer grown under mixture of N-2/H-2 and pure H-2 conditions, the center wavelength was blue-shifted to 418 and 371 nm and the peak reflectivity also showed a reduction to 92% and 79%, respectively. The stopband width also decreases with increasing H-2 contents. The surface roughness and the grain size of the grown DBR structures showed an increase with increasing the H-2 ambient gas ratio. For realization of a high reflectivity and broad bandwidth of AlN/ GaN DBR by using the MOCVD growth method, the pure N-2d ambient gas for growth of AIN layer should be preferable and optimal condition. (C) 2003 Elsevier B.V. All rights reserved.
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    Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template
    (2011)
    Kuo, Cheng-Huang
    ;
    Chang, Li-Chuan
    ;
    Chou, Hsiu-Mei
    ;
    照明與能源光電研究所
    ;
    Institute of Lighting and Energy Photonics
    In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nanorod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm(-3)) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3617533] All rights reserved.
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    Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
    (2011-01-15)
    Chiang, C. H.
    ;
    Chen, K. M.
    ;
    Wu, Y. H.
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    Yeh, Y. S.
    ;
    Lee, W. I.
    Mirror-like and pit-free non-polar a-plane (11-20) GaN films are grown on r-plane (1-102) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature- deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer. (C) 2010 Elsevier B.V. All rights reserved.